DLA SMD-5962-88706 REV F-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add vendor CAGE F8859. Add device class V criteria. Editorial changes throughout. - gap 99-12-22 Raymond Monnin B Add case outline X. Add delta limits, table III. Update boilerplate. - CFS 00-09-19 Monica L. Poelking C Add case outline Z. Update
2、boilerplate to MIL-PRF-38535 requirements. - jak 01-08-06 Thomas M. Hess D Add radiation features, section 1.5. Add radiation criteria in table I. Change case outline X lead temperature in section 1.3. Update boilerplate to include radiation hardness assured requirements. Editorial changes throughou
3、t. jak 05-06-07 Thomas M. Hess E Update radiation features in 1.5 and add SEP table IB. Update boilerplate to current MIL-PRF-38535 requirements. Editorial changes throughout. jak 11-11-29 Thomas M. Hess F Update case outline X for flat pack dimension A and add dimensions E2 and E3 to figure 1. - MA
4、A 13-12-05 Thomas M. Hess REV SHEET REV F F F F SHEET 15 16 17 18 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Christopher A. Rauch DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIR
5、CUIT DRAWING CHECKED BY Ray Monnin THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER / LINE DRIVER, WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APP
6、ROVAL DATE 89-01-30 AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-88706 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E456-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-
7、3990 SIZE A 5962-88706 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are availabl
8、e and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 88706 01 R A Federal RHA Device Case Lead stock class
9、 designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 F 88706 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see
10、1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are mark
11、ed with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC541 Octal buffer/line driver with three-state outputs 1.2.3 Device class designator. Th
12、e device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device.
13、 Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduc
14、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-88706 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outlin
15、e letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack X See figure 1 20 Flat pack Z GDFP1-G20 20 Flat pack with gull wing 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in
16、 MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/, 2/, 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc C
17、lamp diode current (IIK, IOK) . 20 mA DC output current (per output pin) (IOUT) . 50 mA DC VCCor GND current (per output pin) (ICC, IGND) . 50 mA Maximum power dissipation (PD) 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds): Case outline X . +260C Al
18、l other case outlines except case X +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 4/ 1.4 Recommended operating conditions. 2/, 3/, 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range
19、(VOUT) . +0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input rise or fall time (tr, tf): VCC= 3.6 V and 5.5 V 0 to 8 ns/V 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 300 krads (Si) Single event phenomenon (SEP): No S
20、EL at effective LET (see 4.4.4.2) 93 MeV-cm2/mg 6/ NO SEU at effective LET (see 4.4.4.2) . 93 MeV-cm2/mg 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless other
21、wise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of 55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening condi
22、tions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% of VCC, VIL 30% of VCC,
23、 VOH 70% of VCC -20A, VOL 30% of VCC 20 A. 6/ These limits were obtained during technology characterization and qualification, and are guaranteed by design or process, but not production tested unless specified in the customer through the purchase order or contract. Provided by IHSNot for ResaleNo r
24、eproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-88706 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The followin
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