DLA SMD-5962-85030 REV H-2007 MICROCIRCUIT HYBRID LINEAR PRECISION VOLTAGE REFERENCES THIN FILM《硅单片可编程中断控制器 高速氧化物半导体数字微型电路》.pdf

《DLA SMD-5962-85030 REV H-2007 MICROCIRCUIT HYBRID LINEAR PRECISION VOLTAGE REFERENCES THIN FILM《硅单片可编程中断控制器 高速氧化物半导体数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-85030 REV H-2007 MICROCIRCUIT HYBRID LINEAR PRECISION VOLTAGE REFERENCES THIN FILM《硅单片可编程中断控制器 高速氧化物半导体数字微型电路》.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to Military drawing format. Page 8 table I; change group A subgroup for +VRand -VR; add end-point electrical limits for +VRINTand -VRINT. Page 10: Change output offset adjust and temperature effect for device types 03 and 04 trim circuits.

2、 86-12-31 N. A. Hauck B Add device types 05 and 06. Inactivate case outline X. Add case outlines C, Y, and 3. Add vendors CAGE 33256 and 34707. Change drawing CAGE code to 67268. Editorial changes throughout. 89-08-01 W. Heckman C Changed to reflect MIL-H-38534 processing. Update document. Editorial

3、 changes throughout. 92-12-22 K. A. Cottongim D Changes in accordance with NOR 5962-R212-93. 93-08-17 K. A. Cottongim E Changes in accordance with NOR 5962-R045-94. 93-11-18 K. A. Cottongim F Changes to table I, note 1. 99-01-08 K. A. Cottongim G Corrections to sheet 1, figure 1- case outlines X and

4、 Y, and figure 3. Update drawing boilerplate. 05-01-10 Raymond Monnin H Figure 1, case outline Y, correct the row to row spacing symbol from L1to E1. 07-01-26 Joseph Rodenbeck THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. CURRENT CAGE CODE 67268 REV SHEET REV SHEET REV STATUS REV H H H

5、 H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Donald R. Osborne DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. Di Cenzo POST OFFICE BOX 3990 COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL D

6、EPARTMENTS APPROVED BY N. A. Hauck MICROCIRCUIT, HYBRID, LINEAR, PRECISION VOLTAGE REFERENCES, THIN FILM AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 86-04-28 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 14933 85030 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E045-07Provided by IHSNot

7、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85030 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for class H

8、 hybrid microcircuits to be processed in accordance with MIL-PRF-38534 and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). 1.2 PIN. The PIN shall be as shown in the following example: 85030 01 X X Drawing number Device type Case ou

9、tline Lead finish (see 1.2.1) (see 1.2.2) (see 1.2.3) 1.2.1 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit function 01, 02 2700 Precision +10.000-volt reference 03, 04 2702 Precision 10.000-volt reference 05, 06 2701 Precision -1

10、0.000-volt reference 1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14, CDIP1-T14 14 Dual-in-line X See figure 1 14 Dual-in-line Y See figure 1 14 Dual-in-line 3 CQCC1-N28 28 Squ

11、are leadless chip-carrier 1.2.3 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Supply voltage (VS): VCC(device types 01, 02, 03, 04). +20 V dc VEE(device types 03, 04, 05, 06) . -20 V dc Power dissipation (PD), TA= +25C: Device types 01, 02, 05,

12、 06 . 300 mW Device types 03, 04 . 450 mW Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Short circuit protection (to GND) . Continuous Thermal resistance: Junction-to-case (JC): Case outlines C and 3 See MIL-STD-1835 Case outline X 7C/W Case outline Y 8C/W

13、Junction-to-ambient (JA): Case outline X 30C/W Case outline Y 25C/W 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networ

14、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85030 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Supply voltage range (VCC) +13.5 V dc to +16.5 V dc Supply voltage (VEE

15、) -13.5 V dc to -16.5 V dc Output current . 5 mA 1/ Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein.

16、 Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1

17、835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/as

18、sist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing i

19、n this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device class H shall be in accordance with MIL-PRF-38534. Compliance with MIL-PRF-38534 may incl

20、ude the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance requirements as defined in

21、MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions sha

22、ll be as specified in MIL-PRF-38534 and herein. 1/ With resistive load to pin 7 (common). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85030 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEV

23、EL H SHEET 4 DSCC FORM 2234 APR 97 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.2 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Trim circuits. The trim circuits shall be as specified on figure 3. 3.3 E

24、lectrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgro

25、ups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also

26、 be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herei

27、n. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are guaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 Certificate o

28、f compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawing. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certi

29、ficate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38534 or as modified in the

30、 device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. Screening shall be in accordance with MIL-PRF-38534. The following additional criteria shall apply: a. Burn-in test, method 1015 of MIL-

31、STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to either DSCC-VA or the acquiring activity upon request. Also, the test circuit shall specify the inputs, outputs, biases, and power

32、dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TAas specified in accordance with table I of method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical paramete

33、r tests prior to burn-in are optional at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85030 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5

34、DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Min Max Unit 4 -5.0 +5.0 +10.000 V output 5,6 01 -8.0 +8.0 mV 4 -2.5 +2.5 +10.000 V output 5,6 02,04 -5.5 +5.5 mV 4 -5.0 +5.0

35、 +VR+10.000 V output 5,6 03 -10 +10 mV 4 +5.0 -5.0 -10.000 V output 5,6 03,05 +10 -10 mV 4 +2.5 -2.5 Selection output error 2/ -VR-10.000 V output 5,6 04,06 +5.5 -5.5 mV Initial -5 +5 +VRINT+10.000 V outputTA= +25C End-point 1 01,02, 03,04 -10 +10 mV Initial +5 -5 Interim output error -VRINT-10.000

36、V outputTA= +25C End-point 1 03,04, 05,06 +10 -10 mV +VRADJ+10.000 V output, TA= +25C 1 01,02, 03,04 -20 +20 mV Output adjust range for trim circuits (see figure 3) -VRADJ-10.000 V output, TA= +25C 1 03,04, 05,06 +20 -20 mV VCC= +15 V, no load TA= +25C 1 01,02 +14 mA ICCVCC= +15 V, VEE= -15 V, no lo

37、ad TA= +25C 1 03,04 +17 mA VCC= +15 V, no load VEE= -15 V TA= +25C 1 03,04 -4 mA Quiescent current IEEVCC= +15 V, VEE= -15 V, no load TA= +25C 1 05,06 -14 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICR

38、OCIRCUIT DRAWING SIZE A 85030 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type M

39、in Max Unit +VRL+10.000 V output, TA= +25C, +13.5 V VCC +16.5 V 1 01,02, 03,04 -900 +900 V Line regulation -VRL-10.000 V output, TA= +25C, -13.5 V VEE -16.5 V 1 03,04, 05,06 +900 -900 V +VRLOAD+10.000 V output, TA= +25C, 0 IL 10 mA 1 01,02, 03,04 -500 +500 V Load regulation -VRLOAD-10.000 V output,

40、TA= +25C, 0 IL 10 mA 1 03,04, 05,06 +500 -500 V 1 10 +IL2,3 01,02, 03,04 5 mA 1 10 Output current -IL 2,3 03,04, 05,06 5 mA Output noise 3/ VOUT= 10 V, no load, 0.1 Hz BW 10 Hz, TA= +25C 4 01,02, 03,04, 05,06 150 V/p-p 1/ Unless otherwise specified, VIN= +15 V, RL= 2 k to pin 7 (common). 2/ Output v

41、oltage change as a function of temperature is determined using the box method. Each device is tested at -55C, +25C, and +125C. At each temperature the output voltage (VOUT) must fall within the rectangular area bounded by the minimum and maximum temperatures. This method gives a maximum temperature

42、coefficient of 9 ppm/C and a typical value of 3 ppm/C. 3/ Parameter shall be tested as part of device initial characterization and after design and process changes. Parameter shall be guaranteed to the limits specified in table I for all lots not specifically tested. Provided by IHSNot for ResaleNo

43、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85030 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 Case outline X. Inches Millimeters Symbol Min Max Max Min Notes A .215 .250 5.46 6.35 A

44、1.175 .215 4.44 5.46 b .016 .020 0.41 0.51 7 D .860 .885 21.84 22.48 3 E .490 .520 12.45 13.21 3 E1 .295 .305 7.49 7.75 6 e .100 BSC 2.54 BSC 4 L .130 .255 3.30 6.48 L1.150 .290 3.81 7.37 Q .020 .035 0.51 0.89 2 S .100 .160 2.54 4.07 S1.080 .180 2.03 4.57 5 0 15 0 15 NOTES: 1. Index area: A notch, s

45、quare-package corner, or a pin one index point shall be located adjacent to pin one and within the shaded area shown. The manufacturers identification shall not be used as a pin one identification mark. 2. Dimension Q shall be measured from the seating plane to the base plane. 3. This dimension allo

46、ws for off-center lid, meniscus, and weld squash. 4. The basic pin spacing is .100 inch (2.54 mm) between centerlines. Each pin centerline shall be located within .010 inch (0.25 mm) of its exact longitudinal position relative to pins 1 and 14. 5. Dimension S1is not used. 6. Lead center when = 00. E

47、1shall be measured at the centerline of the leads (see MIL-STD-1835). 7. All leads: Increase maximum limit by .003 inch (0.08 mm) measured at the widest diameter when lead finish A or B is applied. 8. If this configuration is used, no polymer or organic materials shall be applied or molded to the bo

48、ttom of the package or cover the leads. FIGURE 1. Case outline(s). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 85030 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 8 DSCC FORM 2234 APR 97 Case outline Y. Inches Millimeters Symbol Min Max Max Min Notes A .140 .200 3.56 5.08 b .014 .023 0.36 0.58 b1.030 .070 0.76 1.78 2 c .008 .015 0.20 0.38 D .770 .810 19.56 20.57 E .48