DLA SMD-5962-96727 REV B-2001 MICROCIRCUIT DIGITAL CMOS BUS CONTROLLER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体母线控制器硅单片电路数字微电路》.pdf
《DLA SMD-5962-96727 REV B-2001 MICROCIRCUIT DIGITAL CMOS BUS CONTROLLER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体母线控制器硅单片电路数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-96727 REV B-2001 MICROCIRCUIT DIGITAL CMOS BUS CONTROLLER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体母线控制器硅单片电路数字微电路》.pdf(15页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Added Intersil as source of supply CAGE 34371. Updated boilerplate andeditorial changes throughout. LTG00-09-12 Monica L. PoelkingB Update boilerplate to MIL-PRF-38535 requirements. LTG 01-04-20 Thomas M. HessREVSHEETREVSHEETREV STATUS REV B A B B
2、 A A A A A A B A A BOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Thomas M. HessDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThomas M. HessCOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. Poe
3、lking MICROCIRCUIT, DIGITAL, CMOS, BUSCONTROLLER, MONOLITHIC SILICONAND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-02-23AMSC N/A REVISION LEVELBSIZEACAGE CODE67268 5962-96727SHEET 1 OF 14DSCC FORM 2233APR 97 5962 -E309-01DISTRIBUTION STATEMENT A . Approved for public release; dist
4、ribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96727DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing doc
5、uments two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness
6、Assurance (RHA) levels are reflected in the PIN.1.2 PIN . The PIN is as shown in the following example:5962 - 96727 01 V R C Federal RHA Device Device Case Lead stock class designator type class outline fini shdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / ( see 1.2.3)/ Draw
7、ing number1.2.1 RHA designator . Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA d
8、esignator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 82C88/7 Latchup resistant, CMOS, bus controller1.2.3 Device class designator . The device class designator is a single l
9、etter identifying the product assurance level as follows:Device class Device requirements documentationM Vendor self -certification to the requirements for MIL-STD-883 compliant, non -JANclass level B microcircuits in accordance with MIL-PRF-38535, appendix AQ or V Certification and qualification to
10、 MIL-PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleR CDIP2-T20 20 Dual-in-line package1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q and V o
11、r MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96727DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3DSCC FORM 2234APR 971.3 Absolute
12、 maximum ratings . 1 /Supply voltage (V CC ) . +8.0 V dcInput or I/O voltage range . GND 0.5 V dc to V CC +0.5 V dcStorage temperature range (T STG ) . -65 C to +150 CJunction temperature (T J ) . +175 CLead temperature (soldering 10 seconds) +265 CThermal resistance, Junction-to-case ( JC ) 12 C/WT
13、hermal resistance, Junction to ambient ( JA ) . 68 C/WMaximum package power dissipation T A = +125 C (P D ) 2 / 0.74 W1.4 Recommended operating conditions .Operating supply voltage range (V CC ) . 4.5 V dc to +5.5 V dcOperating temperature range (T A ) -55 C to +125 CInput low voltage range (V IL )
14、. 0.0 V dc to +0.7 V dcInput high voltage range, except clock pin (V IH ) . 2.2 V dc to V DDInput high voltage range, clock pin (V IHC ) V DD 0.8 V to V DD1.5 Digital logic testing for device classes Q and V . Fault coverage measurement of manufacturinglogic tests (MIL -STD -883, test method 5012) .
15、 90 percent2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthis drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issueof the De
16、partment of Defense Index of Specifications and Standards ( DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Method Standard Mic
17、rocircuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawing s.MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are
18、available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / If
19、device power exceeds package dissipation capabilit y provide heat sinking or derate linearly (the derating is based onJA ) at the rate of 14.7mW/ CProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96727DEFENSE SUP
20、PLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4DSCC FORM 2234APR 972.2 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes appl
21、icable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (
22、QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for deviceclass M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.3.2 Design, construction, and p
23、hysical dimensions . The design, construction, and physical dimensions shall be as specified inMIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outline(s) . The case outline(s) shall be in accordance with 1.2.4 herein.3.2.2 Ter
24、minal connections . The terminal connections shall be as specified on figure 1.3.2.3 Block diagram . The block diagram shall be as specified on figure 2.3.2.4 Test circuit and timing waveforms . The test circuit and timing waveforms shall be as specified on figure 3.3.3 Electrical performance charac
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