DLA SMD-5962-96726 REV D-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf

《DLA SMD-5962-96726 REV D-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96726 REV D-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED ADVANCED CMOS NONINVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC .pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Changes IAW NOR 5962-R337-97 - cfs 97-10-22 Monica L. PoelkingB Changes IAW NOR 5962-R102-98. - thl 98-05-04 Raymond L. MonninC Add device class T criteria. Editorial changes throughout. - jak 98-12-03 Monica L. PoelkingD Correct the Total Dose Ra

2、te and update RHA levels. LTG 99-04-28 Monica L. PoelkingREVSHEETREV C C C C C C C C CSHEET 15 16 17 18 19 20 21 22 23REV STATUS REV D C D C C D D D D C C C C COF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Thanh V.NguyenDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWING

3、CHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingMICROCIRCUIT, DIGITAL, RADIATION HARDENED,ADVANCED CMOS, NONINVERTING OCTALBUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS,AND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL

4、 DATE 95-12-28TTL COMPATIBLE INPUTS, MONOLITHIC SILICONAMSC N/A REVISION LEVELDSIZEACAGE CODE67268 5962-96726SHEET 1 OF 23DSCC FORM 2233APR 97 5962 -E 231-99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking pe

5、rmitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96726DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents three product assurance class levels consisting of high reliability (device

6、classes Q and M),space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlinesand lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of RadiationHardness Assurance (RH

7、A) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturersQuality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application.1.2 PIN . The PIN is as shown in the following example:5962 F 96726 01

8、 V X CFederal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / ( see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA level

9、s and aremarked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit fun

10、ction as follows:Device type Generic number Circuit function01 ACTS541 Radiation hardened, SOS, advanced CMOS,noninverting octal buffer/line driver with three-state outputs, TTL compatible inputs02 ACTS541- 02 1 / Radiation hardened, SOS, advanced CMOS,noninverting octal buffer/line driver with thre

11、e-state outputs, TTL compatible inputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level as follows:Device class Device requirements documentationM Vendor self -certification to the requirem ents for MIL-STD-883 compliant, non -JANc

12、lass level B microcircuits in accordance with MIL-PRF-38535, appendix AQ, V Certification and qualification to MIL-PRF-38535T Certification and qualification to MIL-PRF-38535 with performance as specifiedin the device manufacturers approved quality management plan.1.2.4 Case outline(s) . The case ou

13、tline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleR CDIP2-T20 20 Dual-in-lineX CD FP4-F20 20 Flat pack1 / Device type -02 is the same as device type -01 except that the device type -02 products are manufactured atan overseas wafer

14、foundry. Device type -02 is used to positively identify, by marketing part number and by brandof the actual device, material that is supplied by an overseas foundry.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 596

15、2-96726DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 3DSCC FORM 2234APR 971.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,appendix A for device class M.1.3 Absolute maximum ratings . 1 / 2 / 3 /Suppl

16、y voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) . -0.5 V dc to V CC + 0.5 V dcDC output voltage range (V OUT ) -0.5 V dc to V CC + 0.5 V dcDC input current, any one input (I IN ) . 10 mADC output current, any one output (I OUT ) . 50 mAStorage temperature range (T STG

17、) -65 C to +150 CLead temperature (soldering, 10 seconds) +265 CThermal resistance, junction -to -case ( JC ):Case outline R . 24 C/WCase outline X . 28 C/WThermal resistance, junction -to -ambient ( JA ):Case outline R . 72 C/WCase outline X . 107 C/WJunction temperature (T J ) . +175 CMaximum pack

18、age power dissipation at T A = +125 C (P D ) : 4 /Case outline R . 0.69 WCase outline X . 0.47 W1.4 Recommended operating conditions . 2 / 3 /Supply voltage range (V CC ) . +4.5 V dc to +5.5 V dcInput voltage range (V IN ) . +0.0 V dc to V CCOutput voltage range (V OUT ) . +0.0 V dc to V CCMaximum l

19、ow level input voltage (V IL ) . 0.8 VMinimum high level input voltage (V IH ) V CC /2Case operating temperature range (T C ) . -55 C to +125 CMaximum input rise and fall time at V CC = 4.5 V ( t r , t f ) 10 ns/V1.5 Radiation features :Maximum total dose available (dose rate = 50 300 rad ( Si)/s)(D

20、evice classes M ,Q, or V) . 3 x 10 5 Rads ( Si)(Device class T) 1 x 10 5 Rads ( Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm 2 /mg) 5 /Dose rate upset (20 ns pulse) 1 x 10 11 Rads (Si)/ s 5 /Latch-up None 5 /Dose rate survivability . 1 x

21、 10 12 Rads ( Si)/ s 5 /1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / Unless otherwise noted, all voltages are referenced to GND.3 / The limits for the parameters spe

22、cified herein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C unless otherwise noted.4 / If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA ) atthe following rate:Case outline R 13.9

23、 mW/ CCase outline X . 9.3 mW/ C5 / Guaranteed by design or p rocess but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96726DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C S

24、HEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthis drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the

25、 issueof the Department of Defense Index of Specifications and Standards ( DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrat ed Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Met

26、hod Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings ( SMDs ).MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated,

27、 copies of the specification, standards, and handbooks are available f rom the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, the

28、text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for device classes Q, T and V shall be in accordance withMIL-PRF-38

29、535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for deviceclass M shall be in accordance with MIL-PRF-38535 , appendix

30、 A and as specified herein.3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be as specified inMIL-PRF-38535 and herein for device classes Q,

31、T and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 1.3.2.3 Truth table . The truth table shall be as specified on fig

32、ure 2.3.2.4 Logic diagram . A representative logic diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 4.3.2.6 Irradiation test connections . The irradiation test connections shall be as speci

33、fied in table III.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96726DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5DSCC FORM 2234APR 973.3 Electrical performance characteristi

34、cs and postirradiation parameter limits . Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operatingtemperature range.3.4 Electrical test requirements . The electrical test

35、 requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be markedas listed in MIL-HDBK-103. For packages where marki

36、ng of the entire SMD PIN number is not feasible due to space limitations, themanufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designatorshall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-385

37、35. Marking for device classM shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL

38、-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q, T and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be

39、required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source o f supply for this drawingshall affirm that the manufacturers product meets, for device cl

40、asses Q, T and V, the requirements of MIL-PRF-38535 and hereinor for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as required for device classes Q, T and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535

41、, appendix A shall be provided with each lot of microcircuits delivered tothis drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of product (see 6.2 herein)involving devices acquired to this drawing is required for any change as defined in

42、 MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made availableonshore at the option of the revi

43、ewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be in microcircuitgroup number 37 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT D

44、RAWINGSIZEA 5962-96726DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifiedDevicetypeV CC Group AsubgroupsLimits 2 / UnitMin MaxHig

45、h level outputvoltageV OH3 /For all inputs affectingOutput under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 4.40 VV IN = V CC or GNDI OH = -50 A M, D, P, L, R, F 4 / All 1 4.40For all inputs affectingoutput under testV IN = 2.75 V or 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 5.

46、40V IN = V CC or GNDI OH = -50 A M, D, P, L, R, F 4 / All 1 5.40Low level outputvoltageV OL3 /For all inputs affectingoutput under testV IN = 2.25 V or 0.8 VFor all other inputsAll 4.5 V 1, 2, 3 0.1 VV IN = V CC or GNDI O L = 50 A M, D, P, L, R, F 4 / All 1 0.1For all inputs affectingoutput under te

47、stV IN = 2.75 V or 0.8 VFor all other inputsAll 5.5 V 1, 2, 3 0.1V IN = V CC or GNDI OL = 50 A M, D, P, L, R, F 4 / All 1 0.1Input current highI IH For input under test, V IN = 5.5 VFor all other inputsV IN = V CC or GNDAll 5.5 V 1 +0.5 A2, 3 +1.0M, D, P, L, R, F4 /All 1 +1.0Input current lowI IL Fo

48、r input under test, V IN = GNDFor all other inputsV IN = V CC or GNDAll 5.5 V 1 -0.5 A2, 3 -1.0M, D, P, L, R, F4 /All 1 -1.0See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-96726DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL D SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifi