DLA SMD-5962-95744 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITH.pdf

《DLA SMD-5962-95744 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITH.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95744 REV C-1999 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS NON-INVERTING OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITH.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONS LTR A B C DESCRIPTION DATE (YR-MO-DA) APPROVED Changes IAW NOR 5962-R065-98 - thl 98-03-25 Raymond L. Monnin Add device class T criteria. Editorial changes throughout. - jak 98-1 2-07 Monica L. Poelking Correct the Total Dose Rate and update RHA levels. - LTG 99-04-29 Monica L. Poelking RE

2、V SHEET REV SHEET I 15 I 16 I 17 I 18 I 19 I 20 I 21 I 22 I 23 BBBBBBBBB REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS DRAWING APPROVAL DATE 95-1 0-1 3 AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV CBC SHEET 123 PREPAREDBY Larry T. G

3、auder CHECKED BY Thanh V. Nguyen APPROVED BY Monica L. Poelking REVISION LEVEL AMSC N/A - L APR 97 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 M CROCI RCUIT, DIGITAL, RADIATION HARDEN ED, HIGH SPEED CMOS, NON-INVERTING OCTAL BUFFER/LINE DRIVER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS,

4、 MONOLITHIC SILICON 5962-95744 5962-E245-99 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 6-5000 DEFENSE SU

5、PPLY CENTER COLUMBUS 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes

6、 are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of

7、 these parts and their acceptability in the intended application. SIZE 5962-95744 A REVISION LEVEL SHEET B 2 1.2 m. The PIN is as shown in the following example: 5162 95744 T i f Federal RA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) de

8、signator (see 1.2.4) (see 1.2.5) I (see 1.2.3) v Drawing number 1.2.1 RHA desiqnator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A spec

9、ified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function o1 HCTS244 Radiation hardened, SOS, high speed CMOS, non-invertin

10、g octal bufferlline driver with three-state outputs, TTL compatible inputs 1.2.3 Device class desiqnator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements

11、for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management p

12、lan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desiqnator Terminals Packaqe style R CDIP2-T20 X CDFP4-F20 20 20 Dual-in-line Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes

13、Q, T and Vor MIL-PRF-38535, appendix A for device class M. JbLL FUKlVI 2234 4PR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.3 Absolute maximum ratinqs. 1/2/21 STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 6-5000 DEFENSE SUPPLY CENTER COL

14、UMBUS Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) . -0.5 V dc to VCC + 0.5 V dc DC input current, any one input DC output current, any one output (IOUT) Storage temperature range (TSTG) -65C to +1 50C Lead temperature (soldering, 1 O seconds) Thermal resistance,

15、junction-to-case (eJC): DC output voltage range (VOUT) -0.5 V dc to Vcc + 0.5 V dc +265“C Case outline R 24“C/W Case outline X . 28“C/W Case outline R . 72“C/W Case outline X 107“C/W Junction temperature (TJ) . +175“C Maximum package power dissipation at TA = +125“C (PD): 41 Case outline R . 0.69 W

16、Case outline X . 0.47 W Thermal resistance, junction-to-ambient (eJA): SIZE 5962-95744 A REVISION LEVEL SHEET C 3 1.4 Recommended operatinq conditions. 2/31 Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Input voltage range (VIN) . +O.O V dc to VCC Maximum low level input voltage (VIL) . 0.8 V

17、Minimum high level input voltage (VIH) . Maximum input rise and fall time at VCC = 4.5 V (tr, tf) 500 ns Output voltage range (VOUT) +O.O V dc to Vcc Case operating temperature range (Tc) -55C to +125“C 1.5 Radiation features: Maximum total dose available (dose rate = 50 - 300 rad (Si)/s) (Device cl

18、asses M,Q, or V) . 2 x 1 O5 Rads (Si) (Device class T) 1 x 1 O5 Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 1 O0 MeV/(cmz/mg) z/ Dose rate upset (20 ns pulse) 1 x 1010 Rads (Si)/s s/ Latch-up None s/ Dose rate survivability 1 x 1012 Rads (S

19、i)/s s/ - 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. - 21 Unless otherwise noted, all voltages are referenced to GND. - 31 The limits for the parameters specified her

20、ein shall apply over the full specified VCC range and case temperature range of -55C to +125“C unless otherwise noted. - 41 If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on 8JA) at the following rate: Case outline R 13.9 mW/“C

21、Case outline X . 9.3 mW/“C - 5/ Guaranteed by design or process but not tested. JbLL FUKlVI 2234 4PR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-2. APPLICABLE DOCUMENTS STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 6-5000 DEFENSE SUPPLY CE

22、NTER COLUMBUS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense

23、 Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-

24、STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - MIL-HDBK-780 - Standard Microcircuit Drawings. List of Standard Microcircuit Drawings (SMDs). (Unless otherwise indicated, copies of the specification,

25、 standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes p

26、recedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 and as specified her

27、ein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified her

28、ein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Desiqn, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and Vor MIL-PRF-3853

29、5, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Loqic diaq

30、ram. A representative logic diagram shall be as specified on figure 3. 3.2.5 Switchinq waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. SIZE

31、 5962-95744 A REVISION LEVEL SHEET B 4 JbLL FUKlVI 2234 4PR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performa

32、nce characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgrou

33、p are defined in table I. 3.5 Markinq. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has t

34、he option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. STANDARD

35、 MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 6-5000 DEFENSE SUPPLY CENTER COLUMBUS 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF

36、-38535, appendix A. SIZE 5962-95744 A REVISION LEVEL SHEET B 5 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class

37、M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the ma

38、nufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38

39、535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chanqe for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawi

40、ng is required for any change as defined in MIL-STD-973. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be mad

41、e available onshore at the option of the reviewer. 3.1 O Microcircuit qroup assiqnment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). JbLL FUKlVI 2234 4PR 97 Provided by IHSNot for ResaleNo reproduction or

42、networking permitted without license from IHS-,-,-TABLE I. Electrical performance characteristics. Test conditions I/ unless otherwise specified -55C Tc +125“C All 5.5 V All 4.5 V All 5.5 V All 5.5 V All 5.5 V STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 SI

43、ZE 5962-95744 A REVISION LEVEL SHEET C 6 Test Symbol Group A subgroups Limits 21 Unit Min Max High level output voltage VOH For all inputs affecting Output under test VIN = 2.25 V or 0.8 V I All I 45v 4.40 V For all other inouts VIN = Vcc or GND IOH = -50 PA 1 4.40 For all inputs affecting output un

44、der test VIN = 2.75 V or 0.8 V For all other inputs 5.40 1 5.40 Low level output voltage VOL For all inputs affecting output under test VIN = 2.25 V or 0.8 V For all other inputs 0.1 V 1 0.1 For all inputs affecting output under test VIN = 2.75 V or 0.8 V For all other inputs 0.1 1 0.1 Input current

45、 high IIH For input under test, VIN = 5.5 V For all other inputs VIN = Vcc or GND 1 +O5 2,3 +5.0 1 +5.0 Input current low 111 For input under test, VIN = GND For all other inputs VIN = Vcc or GND 1 -0.5 2,3 -5.0 M, D, P, L, R I All I I 31 1 -5.0 See footnotes at end of table. JbLL FUKlVI 2234 4PR 97

46、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE I. Electrical performance characteristics - Continued. Group A subgroups Test Lin Symbol STANDARD MICROCIRCUIT DRAWING COLUMBUS, OHIO 4321 6-5000 DEFENSE SUPPLY CENTER COLUMBUS Test conditions 11

47、 unless otherwise specified -55C Tc +125“C SIZE 5962-95744 A REVISION LEVEL SHEET C 7 Device type vcc s 21 Unit Max Output current high (Source) lOH For all inputs affecting output under test, VIN = 4.5 V or 0.0 V For all other inputs All 4.5 v 1 I -7.2 mA 2, 3 I -6.0 All Output current low (Sink) I

48、OL All 4.5 v For all inputs affecting output under test, VIN = 4.5 V or 0.0 V For all other inputs mA 2, 3 I 6.0 All 1 I 6.0 VIN = Vcc or GND VOUT = 0.4 V Three-state output leakage current high IOZH All 5.5 v 1: +1 .o +50.0 mOE = 5.5 V For all other inputs VIN = 0.0 V or 5.5 V VOUT = 5.5 v All +50.

49、0 -1 .o IOZL All 5.5 v Three-state output leakage current low mOE = 5.5 V For all other inputs VIN = 0.0 V or 5.5 V VOUT = 0.0 v -50.0 All -50.0 Quiescent supply current Icc VIN = Vcc or GND All 5.5 v 40.0 750.0 750.0 All Quiescent supply current delta, Alcc 41 For inputs under test VIN = VCC - 2.1 v All 5.5 v 1.6 mA For all other inputs M, D, P, L, R VIN = Vcc or GND I- 31 41 All 1.6 TTL input levels See footnotes at end of table. JbLL FUKlVI 2234