DLA SMD-5962-92117 REV E-2013 MICROCIRCUIT LINEAR HIGH SPEED LOW POWER DUAL OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Sheet 3: Paragraph 1.3, Input common mode voltage range (VCM), delete “VS” and substitute “VS”. Sheet 5: Table I, Quiescent power supply current test, IQ, conditions column, delete “VS= 5.0 V” and substitute “VS= 5.0 V, VOUT= 0 V” and delete “VS=

2、 15.0 V” and substitute “VS= 15.0 V, VOUT= 0 V”. Sheet 8: Table I, Settling time test, tS, delete subgroup “9” and substitute subgroup “4”. Table I, Overshoot test, OS, delete subgroup “9” and substitute subgroup “4”. Rise time test, tR, delete subgroups “9, 10, 11” and substitute subgroups “4, 5, 6

3、”. Fall time test, tF, delete subgroups “9, 10, 11” and substitute subgroups “4, 5, 6”. Delete footnote “1/” and substitute “1/ Unless otherwise specified, for dc tests, source resistance (RS) 100 k, and VOUT= 0 V”. Sheet 11: Table IIA, group A test requirements, delete “9, 10, 11 (five times). Grou

4、p B endpoint electrical parameters, delete “9, 10, 11” (two times). Changes in accordance with N.O.R. 5962-R077-93. 93-04-04 M. A. FRYE B Sheet 7: Table I. Slew rate test. Under the “Test” column, delete footnote “7/” entirely. With the symbol of “SR-“ and the condition of “VS= 15 V”, delete the gro

5、up A subgroup 4 value of “200 V/s” and substitute “180 V/s”. Full power bandwidth test. Under the “Test column, footnote “8/” will be renumbered as footnote “7/”. Sheet 8: Table I. Delete footnote “7/” entirely. Rise time test. Under the “Test” column, footnote “9/” will be renumbered as footnote “8

6、/”. Fall time test. Under the “Test” column, footnote “9/” will be renumbered as footnote “8/”. Footnote “8/” will be renumbered as footnote “7/”. Footnote “9/” will be renumbered as footnote “8/”. Changes in accordance with N.O.R. 5962-R194-94. 94-05-25 M. A. FRYE C Drawing updated to reflect curre

7、nt requirements. - ro 01-09-10 R. MONNIN D Drawing updated as part of 5 year review. -rrp 07-04-18 ROBERT M. HEBER E Drawing updated to reflect current MIL-PRF-38535 requirements. - ro 13-09-12 C. SAFFLE REV SHEET REV SHEET REV STATUS REV E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10

8、11 12 PMIC N/A PREPARED BY RICK C. OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E. BESORE APPROVED BY MICHAEL A

9、. FRYE MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 92-06-16 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-92117 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E402-13 Provided by IHSNot for ResaleNo reproduction or networking pe

10、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92117 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device cla

11、ss Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the

12、following example: 5962 - 92117 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the

13、MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device

14、 type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 AD827 High speed, low power, dual operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Dev

15、ice requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designa

16、ted in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendi

17、x A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92117 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Su

18、pply voltage (VS) . 18 V dc Input common mode voltage range (VCM) . VSDifferential input voltage 6.0 V dc Internal power dissipation (PD): Case P . 1.3 W 2/ Case 2 1.0 W 2/ Storage temperature range -65C to +150C Lead temperature (soldering, 60 seconds) +300C Junction temperature (TJ) +175C Thermal

19、resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) . 110C/W 1.4 Recommended operating conditions. Supply voltage range (VS) . 4.5 V dc to 15 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specificati

20、on, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535

21、 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawi

22、ngs. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between

23、 the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damag

24、e to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum internal power dissipation is specified so that the junction temperature does not exceed +175C. For case P, derate 9 mW/C for TA +32C and for case 2, derate at 6.6 mW/C for TA +25C. P

25、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92117 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item r

26、equirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirem

27、ents for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device c

28、lasses Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirrad

29、iation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirement

30、s shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is no

31、t feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall b

32、e in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate

33、 of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to

34、be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requi

35、rements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provid

36、ed with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawi

37、ng. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore

38、 at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

39、S-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92117 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limit

40、s 2/ Unit Min Max Input offset voltage VOSVS= 5 V, VCM= 0 V 1 01 2.0 mV 2,3 4.0 VS= 15 V, VCM= 0 V 1 2.0 2,3 5.0 Input bias current IIBVS= 5 V and 15 V, 1 01 7.0 A VCM= 0 V 2,3 9.5 Input offset current IOSVS= 5 V and 15 V, 1 01 0.3 A VCM= 0 V 2,3 0.4 Output current 3/ IOUTVS= 5 V, VOUT= 2.5 V, TA= +

41、25C 4 01 16 mA VS= 15 V, VOUT= 10 V, TA= +25C 20 Common mode input 4/ voltage range VCMVS= 5 V 1,2,3 01 2.5 V VS= 15 V 12 Quiescent power supply current IQVS= 5 V, VOUT= 0 V 1 01 13 mA 2,3 17.5 VS= 15 V, VOUT= 0 V 1 13.5 2,3 18 Quiescent power 5/ consumption PQVS= 5 V, VOUT= 0 V, 1 01 130 mW IOUT= 0

42、 mA 2,3 175 VS= 15 V, VOUT= 0 V, 1 405 IOUT= 0 mA 2,3 540 Power supply rejection ratio PSRR VS= 5 V to 15 V 1 01 75 dB 2,3 72 Open loop gain AOLVS= 5 V, RL= 500 , 1 01 2.0 V/mV VOUT= 2.5 V 2,3 1.0 VS= 15 V, RL= 1.0 k, 1 3.0 VOUT= 10 V 2,3 1.5 See footnotes at end of table. Provided by IHSNot for Res

43、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92117 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/

44、-55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Common mode rejection ratio CMRR VS= 5 V, VCM= 2.5 V 1 01 80 dB 2,3 75 VS= 15 V, VCM= 12 V 1 80 2,3 75 Output voltage swing VOUTVS= 5 V, RL= 500 1 01 3.0 V 2.3 2.5 VS= 5 V, RL= 150 1 2.5 VS= 15 V, RL= 1 k 1

45、,2,3 12 VS= 15 V, RL= 500 1 10 Slew rate 3/ 6/ +SR VS= 5 V, RL= 500 , AV= +1.0, 4 01 120 V/s VOUT= -2 V to +2 V, rising edge, measured at 10 percent to 90 percent 5,6 90 -SR VS= 5 V, RL= 500 , AV= +1.0, 4 90 VOUT= +2 V to -2 V, falling edge, measured at 10 percent to 90 percent 5,6 65 +SR VS= 15 V,

46、RL= 1 k, AV= +1.0, 4 200 VOUT= -5 V to +5 V, rising edge, measured at 10 percent to 90 percent 5,6 137 -SR VS= 15 V, RL= 1 k, AV= +1.0, 4 180 VOUT= +5 V to -5 V, falling edge, measured at 10 percent to 90 percent 5,6 137 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or

47、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92117 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless o

48、therwise specified Group A subgroups Device type Limits 2/ Unit Min Max Differential input 3/ impedance RINVCM= 0 V, VS= 15 V, TA= +25C 4 01 60 k Unity gain 3/ bandwidth GBWP VS= 5.0 V, VOUT= 100 mV, RL= 500 , TA= +25C, AV= 1 4 01 25 MHz VS= 15 V, VOUT= 100 mV, RL= 1 k, TA= +25C, AV= 1 40 Full power 3/ 7/ bandwidth FPBW VS= 5.0 V, VPK= 2.5 V, RL= 500 , TA= +25C 4 01 5.7 MHz VS= 15 V, VPK= 10 V, RL= 1 k, TA= +25C 3 Closed loop stable 3/ gain CL