DLA SMD-5962-01508 REV H-2013 MICROCIRCUIT MEMORY DIGITAL CMOS FIELD PROGRAMMABLE GATE ARRAY 32 000 GATES MONOLITHIC SILICON.pdf
《DLA SMD-5962-01508 REV H-2013 MICROCIRCUIT MEMORY DIGITAL CMOS FIELD PROGRAMMABLE GATE ARRAY 32 000 GATES MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-01508 REV H-2013 MICROCIRCUIT MEMORY DIGITAL CMOS FIELD PROGRAMMABLE GATE ARRAY 32 000 GATES MONOLITHIC SILICON.pdf(26页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes made to Table 1, updated paragraph 4.4.1f, and editorial changes throughout. Ksr 03-02-21 Raymond Monnin B Added tR and tF to section 1.4, and updated boilerplate paragraphs. Ksr 04-03-12 Raymond Monnin C Added devices 05 - 08, Update to 1
2、.3, made changes to IIL and IOZ in Table I, made change to paragraph 4.2.2 and 4.4.1f, and updated boilerplate paragraphs. Ksr 04-08-27 Raymond Monnin D Add case outline Z, in section 1.3 change input voltage range max number from 5.5 V to 6.0 V, added statements to sections 4.3 and 4.4, and added c
3、ase outline Z to figure 1 and figure 2. ksr 05-10-05 Raymond Monnin E Boilerplate update, part of 5 year review. ksr 10-11-15 Charles F. Saffle F Added device types 09 and10 to section 1.2.2 and Table I. Added case Z to JC in 1.3. Revised Case outline Z in Figure 1. Added additional testing criteria
4、 for devices 09 and 10 in 4.4.2.2 and 4.4.5. Removed reference to a vendor internal document in 4.4.1f(2). Added 4.4.5. Removed reference to vendor software in 4.6. Removed vendor website URL from 6.7. Updated boilerplate to current requirements. lhl 12-05-21 Charles F. Saffle G Updated boilerplate
5、to current requirements. Removed Class M references. Section 4.2.2 is now 4.2.1. Updated section 4.2.1.e for device types 09 and 10. lhl 12-11-26 Charles F. Saffle H Updated boilerplate to current requirements. Updated section 4.2.1e(7) for device types 09 and 10. 13-12-12 Charles F. Saffle REV SHEE
6、T REV H H H H H H H H H H SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING
7、CHECKED BY Raj Pithadia THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond Monnin MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 32,000 GATES, MONOLITHIC SILICON DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 01-07-30 AMSC N/A REVISION LEVE
8、L H SIZE A CAGE CODE 67268 5962-01508 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E068-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01508 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SH
9、EET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Num
10、ber (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 01508 01 Q X C | | | | | | | | | | | | | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline fin
11、ish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA devi
12、ce. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 RT54SX32S 32,000 gate field programmable gate array 02 RT54SX32S-1 32,000 gate field programmable gate array 1/ 03 RT54SX32S 32,000 gate field programmable gate array
13、 2/ 04 RT54SX32S-1 32,000 gate field programmable gate array 1/ 3/ 05 RTSX32SU 32,000 gate field programmable gate array 06 RTSX32SU-1 32,000 gate field programmable gate array 1/ 07 RTSX32SU 32,000 gate field programmable gate array 4/ 08 RTSX32SU-1 32,000 gate field programmable gate array 1/ 5/ 0
14、9 RTSX32SU 32,000 gate field programmable gate array 6/ 10 RTSX32SU-1 32,000 gate field programmable gate array 1/ 7/ 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or
15、V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 256 Ceramic Quad Flat Pack Y See figure 1 208 Ceramic Quad Flat Pack Z See figu
16、re 1 84 Ceramic Quad Flat Pack 1/ Timing performance of the RT54SX32S-1 and RTSX32SU-1 devices shall be approximately 15% faster than the RT54SX32S and RTSX32SU devices (End users may select the appropriate device speed grade through timing calculations based on timing simulation of specific designs
17、 with manufacturers Designer software.) (see 6.7 herein) 2/ Device type 03 is device type 01 with additional testing (see 4.2.1 e) 3/ Device type 04 is device type 02 with additional testing (see 4.2.1 e) 4/ Device type 07 is device type 05 with additional testing (see 4.2.1 e) 5/ Device type 08 is
18、device type 06 with additional testing (see 4.2.1 e) 6/ Device type 09 is device type 05 with additional testing (see 4.2.1.e) 7/ Device type 10 is device type 06 with additional testing (see 4.2.1.e) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S
19、TANDARD MICROCIRCUIT DRAWING SIZE A 5962-01508 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q. 1.3 Absolute maximum ratings (for 2.5V/3.3V/5.0V operating condition
20、s). 8/ DC supply voltage range (VCCI) . -0.3 to +6.0 V dc DC supply voltage range (VCCA) -0.3 to +3.0 V dc Input voltage range (VI) -0.5 to +6.0 V dc Input voltage(VI) for bi-directional I/Os when using 3.3V PCI -0.5 to (+VCCI +0.5) V dc Output voltage range (VO) -0.5 to (+VCCI +0.5) V dc Storage te
21、mperature range (VSTG) -65C to +150C Lead temperature (soldering, 10 seconds) . 300C Thermal resistance, junction-to-case (JC for Case X, Y and Z) . 2.0C/W Maximum junction temperature (TJ) . 150C 1.4 Recommended operating conditions. 3.3V power supply voltage range . 3.0 to 3.6 V dc (10% VCCI) 5.0V
22、 power supply voltage range . 4.5 to 5.5 V dc (10% VCCI) 2.5V power supply voltage range . 2.25 to 2.75 V dc (10% VCCA) Case operating temperature range (TC) . -55C to +125C Input transition time TR and TF 10 ns 9/ 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of m
23、anufacturing logic tests (MIL-STD-883, test method 5012) 100 percent 10/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the i
24、ssues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Stan
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596201508REVH2013MICROCIRCUITMEMORYDIGITALCMOSFIELDPROGRAMMABLEGATEARRAY32000GATESMONOLITHICSILICONPDF

链接地址:http://www.mydoc123.com/p-698201.html