DLA MIL-PRF-19500 690 A-2011 SEMICONDUCTOR DEVICE DIODE SILICON SWITCHING TYPES 1N4148SCSP (NBN) JANHC AND JANKC.pdf

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1、 MIL-PRF-19500/690A 18 May 2011 SUPERSEDING MIL-PRF-19500/690 7 November 2003 * PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4148SCSP (NBN), JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defens

2、e. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes, mounted with silicon-on-insulator technology as a very s

3、mall sealed chip scale package (SCSP). They are available as single down-mounted device, or available in multiple arrays as designated by the NBN suffix. Two levels of product assurance are provided for the device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1 and figure

4、 2. * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type V(BR)VRWMIOTA= 25C IFSMtp= 1/120 s TSTGTJZJXRJMP1N4148SCSP V dc 100 V (pk) 75 mA 200 (1) A (pk) 2 C -55 to +175 C -55 to +175 C/W 20 C/W 80 (2) (1) Derate at 1.6 mA/C above TA= 25C. (2) Maximum value shown is for solder mounting t

5、hickness of 1.5 mill-inches on infinite heat sink. * 1.4 Primary electrical characteristics at TA= +25C, unless otherwise indicated. Type (1) VF1VF2IR1at VR= 20 V dc IR2at VR= 75 V dc 1N4148SCSP IF(mA dc) 10 V dc 0.8 IF(mA dc) 100 V dc 1.2 nA dc 25 A dc 0.5 Type IR3at VR= 20 V dc TA= 150C IR4at VR=

6、75 V dc TA= 150C tfrat Vfr= 5.0 V dc (pk) and IF= 50 mA dc trr1N4148SCSP A dc 35 A dc 75 ns 20 ns 5 (1) See figures 1 and 2. AMSC N/A FSC 5961 INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 August 2011 * Comments, suggesti

7、ons, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online databa

8、se at https:/assist.daps.dla.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/690A 2 * 1.4 Primary electrical characteristics at TA= +25C, unless otherwise indicated - Continued. Type VF1(Max) at IF= 10 mA dc VF2(Max) at IF= 100 mA

9、 dc IR1(Max) at VR= 20 V dc IR2(Max) at VR= 75 V dc 1N4148SCSP V dc 0.8 V dc 1.2 nA dc 25 A dc 0.5 Type IR3(Max) at VR= 20 V dc TA= +150C IR4(Max) at VR= 75 V dc TA= +150C tfr(Max) at Vfr= 5.0 V dc (pk) and IF= 50 mA dc trr(Max) 1N4148SCSP A dc 35 A dc 75 ns 20 ns 5 2. APPLICABLE DOCUMENTS * 2.1 Gen

10、eral. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the comple

11、teness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications,

12、standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPA

13、RTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia

14、, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and r

15、egulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/690A 3 Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL 0.039 0.042 0.99 1.07 BT 0.018 0.023 0.44 0.59 BW 0.019 0.022 0.

16、48 0.56 PL 0.0125 0.0145 0.32 0.37 PW 0.013 0.015 0.33 0.38 SP 0.0055 0.0075 0.14 0.19 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. * FIGURE 1. Semiconductor device, diode, type 1N4148SCSP. Provided by IHSNot for ResaleNo reproduction or networking permi

17、tted without license from IHS-,-,-MIL-PRF-19500/690A 4 * FIGURE 2. Description of NBN array designations. Note: See figure 1 for individual dimensions. A is .00075 - .0105 inch (0.019 0.027 mm) 1N4148SCSP 1N4148SCSP1B2 1N4148SCSP1B3 1N4148SCSP1B4 1N4148SCSP1B5 1N4148SCSP1B6 1N4148SCSP2B2 1N4148SCSP2

18、B3 1N4148SCSP2B4 1N4148SCSP2B5 1N4148SCSP2B6 EQUIVALENT CIRCUIT Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/690A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified

19、herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols

20、, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. CSP Chip scale package. PIN Part Identification Number. RJMPThermal resistance, junction to mounting pad. VfrForward recovery voltage. Specified maximum forward voltage used

21、to determine forward recovery time. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 and 2 herein. 3.4.1 Interface metallization. Interface metallization shall be solderable in accordance with MIL-PRF-19500, MIL-STD

22、-750, and herein. Where a choice of interface metallization is desired, it shall be specified in the acquisition document (see 6.2). * 3.4.2 Diode construction. Devices shall be constructed using a silicon on insulator technique with both the cathode and anode attachments on one side of the device.

23、The opposite (top) side of the device shall be a Pyrex layer (insulator) that serves as a mechanical carrier for the silicon device. The silicon and Pyrex both have a TCE (thermal coefficient of expansion) of 3.0-3.5 ppm/C for overall mounting considerations. This construction becomes a sealed chip

24、scale package with flip-chip features. They are also qualified and screened in a similar manner as chips due to their very small size, including conformance inspections as described in appendix G of MIL-PRF-19500 except for wire bonding features that are not applicable. See tables I and II for furth

25、er details. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I and II herein.

26、* 3.7 Polarity. The polarity shall be indicated by an arrow pointing toward the cathode end on the top-side view. 3.8 Marking. Devices shall not have a part number marked on them. Devices shall be marked with polarity as described in 3.7. Initial container package marking shall be in accordance with

27、 MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified

28、 herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I and II herein). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided by

29、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/690A 6 * 4.2.1 Group E qualification. Group E qualification shall be performed for qualification or requalification beyond that described by appendix G of MIL-PRF-19500 only in accordance with the ins

30、tructions of the qualifying agency for these JANHC and JANKC chip packages. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed on the first inspection

31、lot to this revision to maintain qualification. * 4.2.2 JANHC and JANKC sealed chip scale packages. Qualifications shall be in accordance with Appendix G of MIL-PRF-19500 and as specified herein. * 4.3 Screening. See table II, Subgroups 1 and 2 herein. * 4.4 Conformance inspection. Conformance inspe

32、ction to JANHC or JANKC shall be in accordance with table II as specified herein. Conformance inspection shall be performed on PIN 1N4148SCSP to qualify all variations. The conformance inspection samples may be mounted to appropriate substrates or carriers in order to facilitate testing. 4.4.1 Group

33、 A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein as it applies to tables II and III herein. * 4.4.2 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table

34、IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measur

35、ement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Forward recovery voltage and time. Forward recovery time shall be measured as the time interval between zero time and the point where the pulse has decreased to 110 percent of the steady-state value of VFwhen IF= 50 mA dc. The maximum ri

36、se time of the response detector shall be 1 ns. * 4.5.3 Thermal resistance. Thermal resistance measurement shall be in accordance with method 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for RJMPunder these test conditions wi

37、th 1.5 mill-inches of solder thickness on an infinite heat sink, shall be RJMP 80C/W. The following conditions shall apply when using method 4081. a. IH. 75 mA to 300 mA. b. tH. 25 seconds minimum c. IM. 1 mA to 10 mA. d. tMD70 s maximum. Provided by IHSNot for ResaleNo reproduction or networking pe

38、rmitted without license from IHS-,-,-MIL-PRF-19500/690A 7 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual inspection 2071 See 4.3 and table II, subgroup 2 Subgroup 2 Forward voltage 4011 IF= 10 mA dc VF10.8 V dc Breakdown voltag

39、e 4021 IR= 100 A dc VBR1100 V dc Reverse current 4016 DC method, VR= 20 V dc IR125 nA dc Reverse current 4016 DC method, VR= 75 V dc IR2500 nA dc Forward voltage 4011 IF= 100 mA dc VF21.2 V dc Subgroup 3 High temperature operation: TA= +150C Reverse current 4016 DC method, VR= 20 V dc IR335 A dc Rev

40、erse current 4016 DC method, VR= 75 V dc IR475 A dc Forward voltage 4011 IF= 10 mA dc VF30.8 V dc Low temperature operation: TA= -55C Forward voltage 4011 IF= 100 mA dc VF41.3 V dc Subgroup 4 Junction capacitance 4001 VR= 0 V dc, f = 1 MHz, Vsig= 50 mVp-pmaximum C14.0 pF Junction capacitance 4001 VR

41、= 1.5 V dc, f = 1 MHz, Vsig= 50 mVp-pmaximum C22.8 pF Reverse recovery time 4031 Condition A, C 1 nF, IF= IR= 10 mA dc, RL= 100 5% IR(REC)= 1.0 mA dc, R 1,000 . trr5 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MI

42、L-PRF-19500/690A 8 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Not applicable Subgroup 6 Surge current 4066 Condition A (sine wave) if(surge)= 2 A (pk), IO= maximum rated dc current = 0 VRM= 0 Ten surges, 8.3 ms width e

43、ach, one surge per minute, TA= +25C Electrical measurements See table I, subgroup 2 Subgroup 7 Forward recovery voltage and time 4026 IF= 50 mA dc, (see 4.5.2) V(PEAK)tfr5.0 20 V (pk) ns 1/ For sampling plan, see MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

44、hout license from IHS-,-,-MIL-PRF-19500/690A 9 * TABLE II. SCSP evaluation requirements. 1/ Subgroup Class Test MIL-STD-750 Quantity (accept no.) Reference notes Class K H Method Condition K H 1 X X Electrical test Group A, Subgroup 2 100% 2 X X Visual inspection See 6.2.1 100% 3A X X Internal/die V

45、isual inspection Random sample 45 (0) 22 (0) 3B X X Sample assembly 45 pieces min 22 pieces min 2 4 X X * High temp life Non-operating life (stabilization bake) 1032 +175C, 340 hours 45 (0) 22 (0) X X Temperature cycling 1051 Condition C X Mechanical shock or 2016 Y1 axis direction Constant accelera

46、tion 2006 Y1 axis direction X X Electrical test (read/record) Group A, subgroups 2, 3, 4 3 X X HTRB 1038 Condition A X X Electrical test (read/record) Group A, Subgroup 2 3 4 X X Burn-in 5 X X Electrical test (read/record) Group A, subgroups 2, 3 3 4 X Steady-state life 1038 Condition B 6 X Electric

47、al test (read and record) Group A, Subgroups 2, 3, 4 3 5A Solderability evaluation 2026 “Test B” for surface mount 22 (0) 5B Die shear evaluation 2017 5 (0) or 10 (1) 7 6 X SEM 2077 As applicable See test method 2077 7 RHA not required 8 Surge 4066 Group A, subgroup 6 45 (0) 22 (0) 9 Forward Recover

48、y 4026 Group A, subgroup 7 See footnotes on next page. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/690A 10 TABLE II. SCSP evaluation requirements - Continued. 1/ 1/ NOTE: This table is similar to appendix G of MIL-PRF-19500 for die element evaluation requirements; however, this also includes further additions (with an asterisk) for this CSP. Wire bond is not applicable to this CSP with flip-chip mounting. 2