ASTM F1192-2011(2018) Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices 《半导体器件重离子辐照引起的单粒子现象(SEP)测量的标准指南》.pdf

《ASTM F1192-2011(2018) Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices 《半导体器件重离子辐照引起的单粒子现象(SEP)测量的标准指南》.pdf》由会员分享，可在线阅读，更多相关《ASTM F1192-2011(2018) Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices 《半导体器件重离子辐照引起的单粒子现象(SEP)测量的标准指南》.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、Designation: F1192 11 (Reapproved 2018)Standard Guide for theMeasurement of Single Event Phenomena (SEP) Induced byHeavy Ion Irradiation of Semiconductor Devices1This standard is issued under the fixed designation F1192; the number immediately following the designation indicates the year oforiginal

2、adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.This standard has been approved for use by agencies of the U.S. Department of De

3、fense.1. Scope1.1 This guide defines the requirements and procedures fortesting integrated circuits and other devices for the effects ofsingle event phenomena (SEP) induced by irradiation withheavy ions having an atomic number Z 2. This descriptionspecifically excludes the effects of neutrons, proto

4、ns, and otherlighter particles that may induce SEP via another mechanism.SEP includes any manifestation of upset induced by a singleion strike, including soft errors (one or more simultaneousreversible bit flips), hard errors (irreversible bit flips), latchup(persistent high conducting state), trans

5、ients induced in com-binatorial devices which may introduce a soft error in nearbycircuits, power field effect transistor (FET) burn-out and gaterupture. This test may be considered to be destructive becauseit often involves the removal of device lids prior to irradiation.Bit flips are usually assoc

6、iated with digital devices and latchupis usually confined to bulk complementary metal oxidesemiconductor, (CMOS) devices, but heavy ion induced SEP isalso observed in combinatorial logic programmable read onlymemory, (PROMs), and certain linear devices that may re-spond to a heavy ion induced charge

7、 transient. Power transis-tors may be tested by the procedure called out in Method 1080of MIL STD 750.1.2 The procedures described here can be used to simulateand predict SEP arising from the natural space environment,including galactic cosmic rays, planetary trapped ions, andsolar flares. The techn

8、iques do not, however, simulate heavyion beam effects proposed for military programs. The endproduct of the test is a plot of the SEP cross section (thenumber of upsets per unit fluence) as a function of ion LET(linear energy transfer or ionization deposited along the ionspath through the semiconduc

9、tor). This data can be combinedwith the systems heavy ion environment to estimate a systemupset rate.1.3 Although protons can cause SEP, they are not includedin this guide. A separate guide addressing proton induced SEPis being considered.1.4 The values stated in SI units are to be regarded asstanda

10、rd. No other units of measurement are included in thisstandard.1.5 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety, health, and environmental practices and dete

11、r-mine the applicability of regulatory limitations prior to use.1.6 This international standard was developed in accor-dance with internationally recognized principles on standard-ization established in the Decision on Principles for theDevelopment of International Standards, Guides and Recom-mendat

12、ions issued by the World Trade Organization TechnicalBarriers to Trade (TBT) Committee.2. Referenced Documents2.1 Military Standard:2750 Method 10803. Terminology3.1 Definitions of Terms Specific to This Standard:3.1.1 DUTdevice under test.3.1.2 fluencethe flux integrated over time, expressed asions

13、/cm2.3.1.3 fluxthe number of ions/s passing through a one cm2area perpendicular to the beam (ions/cm2-s).3.1.4 LETthe linear energy transfer, also known as thestopping power dE/dx, is the amount of energy deposited perunit length along the path of the incident ion, typicallynormalized by the target

14、density and expressed as MeV-cm2/mg.3.1.4.1 DiscussionLET values are obtained by dividingthe energy per unit track length by the density of the irradiatedmedium. Since the energy lost along the track generates1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct

15、 responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved March 1, 2018. Published April 2018. Originallyapproved in 1988. Last previous edition approved in 2011 as F119211. DOI:10.1520/F1192-11R18.2Available from Standardization Documents Order Desk, Bldg

16、. 4, Section D,700 Robbins Ave., Philadelphia, PA 191115094.Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United StatesThis international standard was developed in accordance with internationally recognized principles on standardization establish

17、ed in the Decision on Principles for theDevelopment of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.1electron-hole pairs, one can also express LET as chargedeposited per unit path length (for example, picocoulo

18、mbs/micron) if it is known how much energy is required to generatean electron-hole pair in the irradiated material. (For silicon,3.62 eV is required per electron-hole pair.)Acorrection, important for lower energy ions in particular, ismade to allow for the loss of ion energy after it has penetratedo

19、verlayers above the device sensitive volume. Thus the ionsenergy, E, at the sensitive volume is related to its initial energy,EO, as:Es5 Eo2 *ot/cos!SdEx!dxDdxwhere t is the thickness of the overlayer and is the angleof the incident beam with respect to the surface normal. Theappropriate LET would t

20、hus correspond to the modifiedenergy, E.A very important concept, but one which is by no meansuniversally true, is the effective LET. The effective LET ap-plies for those soft error mechanisms where the device sus-ceptibility depends, in reality, on the charge deposited withina sensitive volume that

21、 is thin like a wafer. By equating thecharge deposited at normal incidence to that deposited by anion with incident angle , we obtain:LETeffective! 5 LETnormal!/cos,60Because of this relationship, one can sometimes test witha single ion at two different angles to correspond to two dif-ferent (effect

22、ive) LETs. Note that the effective LET at highangles may not be a realistic measure (see also 6.6). Notealso that the above relationship breaks down when the lateraldimensions of the sensitive volume are comparable to itsdepth, as is the case with VLSI and other modern high den-sity ICs.3.1.5 single

23、 event burnoutSEB (also known as SEBO)may occur as a result of a single ion strike. Here a powertransistor sustains a high drain-source current condition, whichusually culminates in device destruction.3.1.6 single event effectsSEE is a term used earlier todescribe many of the effects now included in

24、 the term SEP.3.1.7 single event gate ruptureSEGR (also known asSEGD) may occur as a result of a single ion strike. Here apower transistor sustains a high gate current as a result ofdamage of the gate oxide.3.1.8 single event functionality interruptSEFI may occuras a result of a single ion striking

25、a special device node, usedfor an electrical functionality test.3.1.9 single event hard faultoften called hard error, is apermanent, unalterable change of state that is typically associ-ated with permanent damage to one or more of the materialscomprising the affected device.3.1.10 single event latch

26、upSEL is an abnormal lowimpedance, high-current density state induced in an integratedcircuit that embodies a parasitic pnpn structure operating as asilicon controlled rectifier.3.1.11 single event phenomenaSEP is the broad categoryof all semiconductor device responses to a single hit from anenerget

27、ic particle. This term would also include effects inducedby neutrons and protons, as well as the response of powertransistorscategories not included in this guide.3.1.12 single event transients, (SET)SETs are SE-causedelectrical transients that are propagated to the outputs ofcombinational logic ICs

28、. Depending upon system applicationof these combinational logic ICs, SETs can cause systemSEU.3.1.13 single event upset, (SEU)comprise soft upsets andhard faults.3.1.14 soft upsetthe change of state of a single latchedlogic state from one to zero, or vice versa. The upset is “soft”if the latch can b

29、e rewritten and behave normally thereafter.3.1.15 threshold LETfor a given device, the thresholdLET is defined as the minimum LET that a particle must haveto cause a SEU at = 0 for a specified fluence (for example,106ions/cm2). In some of the literature, the threshold LET isalso sometimes defined as

30、 that LET value where the crosssection is some fraction of the “limiting” cross section, but thisdefinition is not endorsed herein.3.1.16 SEP cross sectionis a derived quantity equal to thenumber of SEP events per unit fluence.3.1.16.1 DiscussionFor those situations that meet thecriteria described f

31、or usage of an effective LET (see 3.1.4), theSEP cross section can be extended to include beams impingingat an oblique angle as follows: 5number of upsetsfluence 3 cos where = angle of the beam with respect to the perpen-dicularity to the chip. The cross section may have units suchas cm2/device or c

32、m2/bit or m2/bit. In the limit of highLET (which depends on the particular device), the SEP crosssection will have an area equal to the sensitive area of thedevice (with the boundaries extended to allow for possiblediffusion of charge from an adjacent ion strike). If any ioncauses multiple upsets pe

33、r strike, the SEP cross section willbe proportionally higher. If the thin region waferlike assump-tion for the shape of the sensitive volume does not apply,then the SEP cross section data become a complicated func-tion of incident ion angle. As a general rule, high angle testsare to be avoided when

34、a normal incident ion of the sameLET is available.A limiting or asymptotic cross section is sometimes mea-sured at high LET whenever all particles impinging on asensitive area of the device cause upset. One can establishthis value if two measurements, having a different high LET,exhibit the same cro

35、ss sections.3.2 Abbreviations:3.2.1 ALSadvanced low power Schottky.3.2.2 CMOScomplementary metal oxide semiconductordevice.3.2.3 FETfield effect transistor.3.2.4 ICintegrated circuit.3.2.5 NMOSn-type-channel metal oxide semiconductordevice.F1192 11 (2018)23.2.6 PMOSp-type-channel metal oxide semicon

36、ductordevice.3.2.7 PROMprogrammable read only memory.3.2.8 RAMrandom access memory.3.2.9 VLSIvery large scale integrated circuit.4. Summary of Guide4.1 The SEP test consists of irradiation of a device with aprescribed heavy ion beam of known energy and flux in such away that the number of single eve

37、nt upsets or other phenomenacan be detected as a function of the beam fluence (particles/cm2). For the case where latchup is observed, a series ofmeasurements is required in which the fluence is recorded atwhich latchup occurs, in order to obtain an average fluence.4.2 The beam LET, equivalent to th

38、e ions stopping power,dE/dx, (energy/distance), is a fundamental measurement vari-able. A full device characterization requires irradiation withbeams of several different LETs that in turn requires changingthe ion species, energy, or, in some cases, angle of incidencewith respect to the chip surface

39、.4.3 The final useful end product is a plot of the upset rate orcross section as a function of the beam LET or, equivalently, aplot of the average fluence to cause upset as a function of beamLET. These comments presume that LET, independent of Z,isa determinant of SE vulnerability. In cases where ch

40、argedensity (or charge density and total charge) per unit distancedetermine device response to SEs, results provided solely interms of LET may be incomplete or inaccurate, or both.4.4 Test Conditions and RestrictionsBecause many fac-tors enter into the effects of radiation on the device, parties tot

41、he test should establish and record the test conditions to ensuretest validity and to facilitate comparison with data obtained byother experimenters testing the same type of device. Importantfactors which must be considered are:4.4.1 Device AppraisalAreview of existing device data toestablish basic

42、test procedures and limits (see 8.1),4.4.2 Radiation SourceThe type and characteristics of theheavy ion source to be used (see 7.1),4.4.3 Operating ConditionsThe description of the testingprocedure, electrical biases, input vectors, temperature range,current-limiting conditions, clocking rates, rese

43、t conditions,etc., must be established (see Sections 6, 7, and 8),4.4.4 Experimental Set-UpThe physical arrangement ofthe accelerator beam, dosimetry electronics, test device,vacuum chamber, cabling and any other mechanical or electri-cal elements of the test (see Section 7),4.4.5 Upset DetectionThe

44、 basis for establishing upsetmust be defined (for example, by comparison of the test deviceresponse with some reference states, or by comparison ofpost-irradiation bit patterns with the pre-irradiation pattern, andthe like (see 7.4). Tests of heavy ion induced transients requirespecial techniques wh

45、ose extent depends on the objectives andresources of the experimenter,4.4.6 DosimetryThe techniques to be used to measure ionbeam fluxes and fluence.4.4.7 Flux RangeThe range of heavy ion fluxes (bothaverage and instantaneous) must be established in order toprovide proper dosimetry and ensure the ab

46、sence of collectiveeffects on device response. For heavy ion SEP tests a normalflux range will be 102to 105ions cm2-s. However, higherfluxes are acceptable if it can be established that dosimetry andtester limits, coincident upset effects, device heating, and thelike, are properly accounted for. Suc

47、h higher limits may beneeded for testing future smaller geometry parts.4.4.8 Particle Fluence LevelsThe minimum fluence is thatfluence required to establish that an observance of no upsetscorresponds to an acceptable upper bound on the upset crosssection with a given confidence. Sufficient fluence s

48、hould beprovided to also ensure that the measured number of upsetevents provides an upset cross section whose magnitude lieswithin acceptable error limits (see 8.2.7.2). In practice, afluence of 107ions/cm2will often meet these requirements.4.4.9 Accumulated Total DoseThe total accumulated doseshall

49、 be recorded for each device. However, it should be notedthat the average dose actually represents a few heavy iontracks, 30 m. The U.C.Berkeley 88-inch cyclotron and the Brookhaven NationalLaboratory Van de Graaff have adequate energy for most ions,but not all. Gold data at BNL is frequently too limited in rangeto give consistent results when compared to nearby ions of theperiodic table. Medium-energy sources, such as the K500cyclotron at TexasAhowever, in general, DUTs may be safely packed and trans-ported without