DLA SMD-5962-84071 REV H-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS THREE-STATE OCTAL D-TYPE FLIP-FLOP MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED B Add vendor CAGE 27014 to device 012X. Convert to military drawing format including change of drawing CAGE number. Editorial changes throughout. Inactivate device 01RX for new design. 87-11-24 M. A. Frye C Technical changes in 1.4 and Table I. Add

2、 test circuit to figure 3. Editorial changes throughout. 89-04-21 M. A. Frye D Changes in accordance with NOR 5962-R186-92. 92-09-08 M. L. Poelking E Add vendor CAGE F8859. Add class V device criteria. Editorial changes throughout. -ljs 99-11-09 Raymond Monnin F Correct data limits in paragraph 1.3

3、and test conditions in Table I. Add case outline X. Add Table III, delta limits. Editorial changes throughout. -ljs 00-07-13 Raymond Monnin G Correct table II. Update boilerplate to MIL-PRF- 38535 requirements. jak 02-01-14 Thomas M. Hess H Add JEDEC Standard 7-A reference in paragraphs 2.2 and 4.4.

4、1c. Update boilerplate paragraphs to the current requirements as specified in MIL-PRF-38535. - jak 09-10-21 Thomas M. Hess Current CAGE CODE is 67268. REV SHEET REV H SHEET 15 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. K

5、elleher DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, THREE-STATE OCTAL D-TYPE FLIP-FLOP, AND

6、 AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 84-09-28 MONOLITHIC SILICON AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 14933 84071 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E002-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

7、MICROCIRCUIT DRAWING SIZE A 84071 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (devic

8、e class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M

9、 and Q: 84071 01 R A Drawing number Device type Case outline Lead finish (see 1.2.2) (see 1.2.4) (see 1.2.5) For device class V: 5962 - 84071 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1

10、.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marke

11、d with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HC374 Three-state octal D-type flip-flop 1.2.3 Device class designator. The device class d

12、esignator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class De

13、vice requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networki

14、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84071 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Des

15、criptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X See figure 1 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF

16、-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc Input clamp diode current (IIK) . 20 mA Output clamp diode

17、 current (IOK) . 20 mA Continuous output current . 35 mA Continuous current through VCCor GND 70 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 J

18、unction temperature (TJ) +175C 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Case operating temperature range (TC) -55C to +125C Input rise or fall time (tr, tf): VCC= 2.0 V . 0 to 1,000 ns CC= 4.5 V . 0 to 500 ns VCC= 6.0 V . 0 to 400 ns Minimum se

19、tup time (ts): TC= +25C: VCC= 2.0 V . 100 ns CC= 4.5 V . 20 ns VCC= 6.0 V . 17 ns TC= -55C to +125C: VCC= 2.0 V . 150 ns CC= 4.5 V . 30 ns VCC= 6.0 V . 25 ns 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade p

20、erformance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3 The limits for the parameters speified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Ma

21、ximum junction temperature shall not be exceeded except for allowable short circuit duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

22、E A 84071 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions Continued. Minimum pulse width (tw): TC= +25C: VCC= 2.0 V . 80 ns CC= 4.5 V . 16 ns VCC= 6.0 V . 14 ns TC= -55C to +125C: VCC= 2.0 V . 120 ns CC= 4.5

23、 V . 24 ns VCC= 6.0 V . 20 ns Minimum hold time (th): TC= +25C: VCC= 2.0 V . 10 ns CC= 4.5 V . 5 ns VCC= 6.0 V . 5 ns TC= -55C to +125C: VCC= 2.0 V . 13 ns CC= 4.5 V . 5 ns VCC= 6.0 V . 5 ns Maximum clock frequency (fmax): TC= +25C: VCC= 2.0 V . 6 MHz CC= 4.5 V . 30 MHz VCC= 6.0 V . 35 MHz TC= -55C

24、to +125C: VCC= 2.0 V . 4 MHz CC= 4.5 V . 20 MHz VCC= 6.0 V . 24 MHz Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84071 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM

25、 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation

26、 or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFEN

27、SE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia,

28、 PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No.

29、7-A - Standard for Description of 54/74HCXXXX and 54/74HCTXXXX High-Speed CMOS Devices (Copies of these documents are available online at http:/www.eia.org or from the Electronic Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.3 Order of precedence. In the event of a conflic

30、t between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requi

31、rements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requireme

32、nts for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device cl

33、asses Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be

34、as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84071 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 RE

35、VISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical perf

36、ormance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subg

37、roup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not markin

38、g the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mar

39、k. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be r

40、equired from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The

41、certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appen

42、dix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device

43、class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activit

44、y retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in micr

45、ocircuit group number 38 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 84071 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR

46、97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max High-level output voltage VOH VIN= VIHminimum or VILmaximum IOH= -20 A VCC= 2.0 V 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHmini

47、mum or VILmaximum IOH= -6.0 mA VCC= 4.5 V 1 3.98 2, 3 3.7 VIN= VIHor VILIOH= -7.8 mA VCC= 6.0 V 1 5.48 2, 3 5.2 Low-level output voltage VOLVIN= VIHminimum or VILmaximum IOL= 20 A VCC= 2.0 V 1, 2, 3 0.1 V VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHor VILIOL= 6.0 mA VCC= 4.5 V 1 0.26 2, 3 0.4 VIN= VIHor V

48、ILIOL= 7.8 mA VCC= 6.0 V 1 0.26 2, 3 0.4 High level input voltage VIH2/ VCC= 2.0 V 1, 2, 3 1.5 V VCC= 4.5 V 3.15 VCC= 6.0 V 4.2 Low-level input voltage VIL2/ VCC= 2.0 V 1, 2, 3 0.3 V VCC= 4.5 V 0.9 VCC= 6.0 V 1.2 Input capacitance CINTC= +25C, VCC= 2.0 V or 6.0 V See 4.4.1c 4 10.0 pF Power dissipation capacitance CPDSee 4.4.1c 4 100 pF Quiescent supply current ICCVIN= VCC or GND, VCC= 6.0 V IOUT= 0 A 1 8.0 A 2, 3 160 Input leakage current IINVCC= 6.0 V