DLA MIL-PRF-19500 660 E-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR P-CHANNEL SILICON TYPES 2N7424 2N7425 AND 2N7426 JANTXVR JANTXVF JANSR AND JANSF.pdf
《DLA MIL-PRF-19500 660 E-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR P-CHANNEL SILICON TYPES 2N7424 2N7425 AND 2N7426 JANTXVR JANTXVF JANSR AND JANSF.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 660 E-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR P-CHANNEL SILICON TYPES 2N7424 2N7425 AND 2N7426 JANTXVR JANTXVF JANSR AND JANSF.pdf(22页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/660E 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF This specification is approved
2、 for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode
3、, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figu
4、re 1, TO-254AA. 1.3 Maximum ratings. Unless otherwise specified, TA= +25oC. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2(3)(4) TC= +100C ISIDM (5) TJand TSTG2N7424 2N7425 2N7426 W 250 250 250 W 3.0 3.0 3.0 C/W 0.50 0.50 0.50 V dc -60 -100 -200 V dc -60 -100 -200 V dc 20 20 2
5、0 A dc -35 -35 -27 A dc -30 -24 -17 A dc -35 -35 -27 A (pk) -140 -140 -108 C -55 to +150 (1) Derate linearly 2.0 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal construction. (4) See
6、figure 3, maximum drain current graphs. (5) IDM= 4 x ID1as calculated in note 3. AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDComments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or
7、 emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation and process conversion measures necessary to comply with this document shall be complet
8、ed by 6 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/660E 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= -1.0 mA dc VGS(TH)1VDS VGSID= -1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent of ra
9、ted VDSMax rDS(on)(1) VGS= -12V ID= ID2EAS TJ= +25C TJ= +150C V dc V dc Min Max A dc mJ 2N7424 2N7425 2N7426 -60 -100 -200 -2.0 -4.0 -2.0 -4.0 -2.0 -4.0 -25 -25 -25 0.050 0.073 0.160 0.105 0.155 0.340 500 500 500 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in th
10、is section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document us
11、ers are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a pa
12、rt of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-ST
13、D-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless oth
14、erwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtaine
15、d. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/660E 3 Symbol Dimensions Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150
16、BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Refer to applicable symbol list
17、. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 5. All terminals are isolated from case. FIGURE 1. Physical dimensions for TO-254AA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/660E 4 3. REQUIREMENTS 3.
18、1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable quali
19、fied manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: IASRated avalanche current, nonrepetitive nC nano coulomb. 3.4 Interface and
20、physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Lead material and finish. Lead m
21、aterial shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of terminal finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrostatic discharge
22、protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Dev
23、ices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative hum
24、idity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Marking. Marking shall be in accordance w
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