DLA SMD-5962-11212 REV B-2013 MICROCIRCUIT BiCMOS LINEAR LOW DROPOUT REGULATOR MONOLITHIC SILICON.pdf

《DLA SMD-5962-11212 REV B-2013 MICROCIRCUIT BiCMOS LINEAR LOW DROPOUT REGULATOR MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-11212 REV B-2013 MICROCIRCUIT BiCMOS LINEAR LOW DROPOUT REGULATOR MONOLITHIC SILICON.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Make changes to 1.2.2, 1.5, Table IA, Table IB, figure 2, 4.4.4.1, A.1.2.2, A.1.2.4, figure A-1. Add paragraph A.1.5. - ro 12-04-02 C. SAFFLE B Add case outline Y. Under paragraph 1.3, make changes to footnote 2/ and add a foo

2、tnote for JAlimits. Under figure 1, case outline X, delete the last sentence from note 2. Make changes to case outline X A1, E1, and L dimensions as specified under figure 1. Delete EIA/JEDEC and device class M references. - ro 13-08-22 C. SAFFLE REV SHEET REV B B B B B B B B B B B B SHEET 15 16 17

3、18 19 20 21 22 23 24 25 26 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE B

4、Y ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, BiCMOS, LINEAR, LOW DROPOUT REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 11-12-12 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-11212 SHEET 1 OF 26 DSCC F

5、ORM 2233 APR 97 5962-E517-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11212 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawi

6、ng documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness

7、Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 11212 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Draw

8、ing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device

9、type Generic number Circuit function 01 ISL75051SRH Radiation hardened BiCMOS 3.0 amp low dropout regulator 02 ISL75051SEH Radiation hardened BiCMOS 3.0 amp low dropout regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

10、follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 18 Ceramic metal s

11、eal flat pack Y See figure 1 18 Ceramic metal seal flat pack with bottom metal 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWI

12、NG SIZE A 5962-11212 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage (VIN) relative to GND . -0.3 V to +6.7 V Output voltage (VOUT) relative to GND -0.3 V to +6.7 V PG, EN, OCP/ADJ pins, relative to GND -0.

13、3 V dc to +6.7 V dc Power dissipation (PD) : Case outline X 4.46 W Case outline Y 5.21 W Maximum junction temperature (TJ) . +175C Lead temperature (soldering, 10 seconds) . +300C Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) : Case outline X 4C/W 2/ Case outlin

14、e Y 3.3C/W 2/ Thermal resistance, junction-to-ambient (JA) : Case outline X 28C/W 3/ Case outline Y 24C/W 3/ 1.4 Recommended operating conditions. Input voltage (VIN) relative to GND . 2.2 V to +6.0 V Output voltage (VOUT) range 0.8 V to +5.0 V PG, EN, OCP/ADJ pins, relative to GND 0 V to +6.0 V OCP

15、 (over current protection) range 0.5 A to 8.5 A 4/ Junction temperature (TJ) . +150C Ambient operating temperature range (TA) -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and a

16、ffect reliability. 2/ For JC, the “case temperature” location is the center of the package underside. 3/ JAis measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. 4/ The OCP pin allows the short circuit output limit thresh

17、old to be programmed by means of a resistor from the OCP pin to GND. The resistor sets the constant current threshold for the output under fault conditions. The calculation for determining OCPTH is as follows. OCPTH = 9.5 X e( -0.6 x ROCP ) / (1 + 0.1 x ROCP ). OCPTH = over current threshold in amps

18、. ROCP = OCP resistor in k. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11212 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum

19、 total dose available (dose rate = 50 300 rads(Si)/s): Device type 01 100 krads(Si) 5/ Device type 02 100 krads(Si) 6/ Maximum total dose available (dose rate 0.01 rads(Si)/s): Device type 02 50 krads(Si) 6/ Single event phenomenon (SEP) features: No Single event latchup (SEL) occurs at effective LE

20、T (see 4.4.4.2) . 86 MeV/mg/cm27/ 8/ No Single event burnout (SEB) occur at effective LET (see 4.4.4.2) 86 MeV/mg/cm27/ 8/ No Single event transient (SET) (VOUTwithin 5%) at effective LET (see 4.4.4.2) . 86 MeV/mg/cm27/ 8/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbook

21、s. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Man

22、ufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standar

23、d Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 5/ Device type 01 may be dose rate sensitive in a space environment and may demonstr

24、ate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si). 6/ Device type 02 radiation end point limits for the noted parameters are

25、 guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 7/ SEP tests performed with capacitance of 220 F for CINand COUT, 200 nF used for bypass capacitor. SEB and SEL

26、 tests done on a stand alone open loop configuration. For SEL, no latch up requiring manual intervention was observed. SET tests done in a closed loop configuration. The (VOUT) was measured across bulk capacitor of the application. 8/ Limits are characterized at initial qualification and after any d

27、esign or process changes which may affect the upset or latchup characteristics but, not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D

28、RAWING SIZE A 5962-11212 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are

29、the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.or

30、g or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however,

31、supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Qu

32、ality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction,

33、 and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagr

34、am. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical per

35、formance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range. 3.4 Electrical test requ

36、irements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where

37、 marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535

38、. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to sup

39、ply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF

40、-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

41、m IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11212 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless other

42、wise specified Min Max DC characteristics section. DC output voltage accuracy VOUTVOUTresistor adjust to: 0.52 V, 1.5 V and 1.8 V, 1,2,3 01, 02 -1.5 1.5 % 2.2 V VIN 3.6 V, 0 A ILOAD 3.0 A VOUTresistor adjust to: 5.0 V, -1.5 1.5 VOUT+ 0.4 V VIN 6.0 V, 0 A ILOAD 3.0 A Feedback pin VADJ2.2 V VIN 6.0 V,

43、 ILOAD= 0 A 1,2,3 01, 02 514.8 525.2 mV DC input line regulation 2.2 V VIN 3.6 V, 1,3 01, 02 3.5 mV VOUT= 1.5 V 2 8.0 2.2 V VIN 3.6 V, 1,3 3.5 VOUT= 1.8 V 2 10.5 VOUT+ 0.4 V VIN 6.0 V, 1,2,3 20 VOUT= 5.0 V DC output load regulation VOUT= 1.5 V, 1,2,3 01, 02 -4.0 -0.1 mV 0 A ILOAD 3.0 A, VIN= VOUT+ 0

44、.4 V VOUT= 1.8 V, -4.0 -0.05 0 A ILOAD 3.0 A, VIN= VOUT+ 0.4 V VOUT= 5.0 V, -15.0 -0.05 0 A ILOAD 3.0 A, VIN= VOUT+ 0.4 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11212 D

45、LA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max DC characteristics secti

46、on - continued. Feedback input current VADJ= 0.5 V 1,2,3 01, 02 1 A Ground pin current IQVOUT= 1.5 V, ILOAD= 0 A, 1,2,3 01, 02 12 mA VIN= 2.2 V VOUT= 5.0 V, ILOAD= 0 A, 18 VIN= 6.0 V VOUT= 1.5 V, ILOAD= 3 A, 13 VIN= 2.2 V VOUT= 5.0 V, ILOAD= 3 A, 18 VIN= 6.0 V Ground pin current in shutdown ISHDNENA

47、BLE pin = 0 V, 1,2,3 01, 02 10 A VIN= 6.0 V Dropout voltage 3/ VDOILOAD= 1.0 A, VOUT= 2.5 V 1,2,3 01, 02 100 mV ILOAD= 2.0 A, VOUT= 2.5 V 200 ILOAD= 3.0 A, VOUT= 2.5 V 300 AC characteristics section. Input supply ripple rejection PSRR VP-P= 300 mV, f = 1 kHz, 4,5,6 01, 02 42 dB ILOAD= 3 A, VIN= 2.5

48、V, VOUT= 1.8 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-11212 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Device start-up chara