DLA SMD-5962-10241-2013 MICROCIRCUIT CMOS OPERATIONAL AMPLIFIER QUAD MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED REV SHEET REV SHEET 15 REV STATUS REV OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Steve L.Duncan DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIRCUIT DRAWING THIS DRAWING
2、 IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Greg Cecil APPROVED BY Charles F. Saffle MICROCIRCUIT, CMOS, OPERATIONAL AMPLIFIER, QUAD, MONOLITHIC SILICON DRAWING APPROVAL DATE 13-03-26 AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-10241 SHEET 1
3、OF 15 DSCC FORM 2233 APR 97 5962-E334-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10241 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope.
4、This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflec
5、ted in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 H 10241 01 K X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation
6、 hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Ge
7、neric number Circuit function 01 RHD5900 Quad operational amplifier 02 RHD5901 Quad operational amplifier, Hi-Z output control 03 RHD5902 Quad operational amplifier, High speed, Hi-Z output control 1.2.3 Device class designator. This device class designator shall be a single letter identifying the p
8、roduct assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliabil
9、ity class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level uses
10、the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the other
11、classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manufac
12、turer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10
13、241 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 16 Flat package with formed leads
14、 1.2.5 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) . +7.0 V dc Input voltage (VIN) range . VCC+0.4 V, VEE-0.4 V Junction temperature (TJ) . +150C Power +25C 200 mW Thermal resistance, Junction to Case (JC) 7 C/W Storage t
15、emperature range . -65C to +150C Lead temperature (soldering, 10 seconds) . +300C 1.4 Recommended operating conditions. Supply voltage (VCC) range +3.0 V dc to +5.5 V dc Input Common Mode (VCM) range VCCto VEECase operating temperature range (TC) . -55C to +125C 1.5 Radiation features. 2/ Maximum To
16、tal Ionizing Dose (TID) (dose rate = 50 - 300 rad(Si)/s): In accordance with MIL-STD-883, method 1019, condition A 1 Mrad(Si) Enhanced Low Dose Rate Sensitvity (ELDRS) . 3/ Single Event Phenomenon (SEP) effective linear energy transfer (LET): No Single Event Latchup (SEL) . 100 MeV-cm2/mg 4/ 5/ Sing
17、le Event Transient (SET) 59 MeV-cm2/mg 4/ 5/ Neutron Displacement Damage ( 1 x 1014 neutrons/cm2) . 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unl
18、ess otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835
19、 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. _ 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended oper
20、ation at the maximum levels may degrade performance and affect reliability. 2/ See section 4.3.5 for the manufacturers radiation hardness assurance analysis and testing. 3/ Not tested, Immune by 100 percent CMOS technology. 4/ Single event testing performed at 100 Mev-cm2/mg with no latch-up and up
21、to 59 Mev-cm2/mg with single event transients (voltage) limited as specified in Table IB. 5/ See table IB. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10241 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990
22、 REVISION LEVEL SHEET 4 DSCC FORM 2234 APR 97 (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents
23、 form a part of this document to the extent specified herein. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are available online a
24、t http:/www.astm.org or from the American Society for Testing and Materials, P O Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes pre
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