DLA MIL-PRF-19500 685 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR N-CHANNEL SILICON TYPES 2N7475T1 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFF.pdf

《DLA MIL-PRF-19500 685 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR N-CHANNEL SILICON TYPES 2N7475T1 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFF.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 685 F-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR N-CHANNEL SILICON TYPES 2N7475T1 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFF.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/685F 6 May 2013 SUPERSEDING MIL-PRF-19500/685E 22 April 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR This speci

2、fication is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-Channel

3、, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. See 6.5 for J

4、ANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, (TO-254AA). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2 (3) (4) TC= +100C ISIDM(5) TJand TSTG2N7475T1 2N7476T1 2N7477T1 W 208 208 208 W 3.0 3.0 3.0

5、 C/W 0.60 0.60 0.60 V dc 130 200 250 V dc 130 200 250 V dc +20 +20 +20 A dc 45 45 37 A dc 45 29 23.5 A dc 45 45 37 A (pk) 180 180 148 C -55 to +150 (1) Derate linearly 1.67 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDspecs.

6、 IDis limited to 45 A by package and device construction: (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as defined in note (3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, C

7、olumbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil . ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversio

8、n measures necessary to comply with this revision shall be completed by 20 June 2013. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/685F 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0 mA dc VGS

9、(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent Max rDS(on)(1) VGS= 12V, ID= ID2EAS of rated VDSTJ= +25C TJ= +150C 2N7475T1 2N7476T1 2N7477T1 V dc 130 200 250 V dc Min Max 2.5 4.5 2.5 4.5 2.5 4.5 A dc 10 10 10 0.0145 0.044 0.061 0.033 0.101 0.153 mJ 432 256 258 (1) Pulsed (see 4.5.1). 2. A

10、PPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has bee

11、n made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The f

12、ollowing specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, Genera

13、l Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.assist.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D

14、, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicabl

15、e laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/685F 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are

16、 isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 5. Protrusion thickness of ceramic eyelets included in dimension LL. FIGURE 1. Dimensions and configuration (TO-254AA). Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH

17、 .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 5 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 4 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate Provided by IHSNot for

18、ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/685F 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products

19、 that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specif

20、ied in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (TO-254AA) herein. Methods used for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic)

21、. 3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500 and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100

22、percent hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option

23、of the manufacturer, marking of the country of origin may be omitted from the body, but shall be retained on the initial container. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.6.1 Handling. MOS devices must be handle

24、d with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.6). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do n

25、ot handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltag

26、e to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I herein. 3.8 Electrical

27、 test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot

28、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/685F 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance

29、 inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500. 4.2.1 Group E qualification. Group

30、 E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision

31、 shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. SEE shall be performed at initial qualification and after process or design changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provi

32、de the verification test conditions from section 5 of method 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the slash sheet. End-point measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qu

33、alifying or acquiring activity. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/685F 6 * 4.3 Screening (JANS and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measure

34、ments shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS JANTXV (3) Gate stress test (see 4.3.1). Gate stress test (see 4.3.1). (3) Method 3470 of MIL-STD-750, (s

35、ee 4.3.2), EAStest. Method 3470 of MIL-STD-750, (see 4.3.2), EAStest. (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3). Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3). 9 Subgroup 2 of table I herein Not applicable. IDSS1, IGSSF1, IGSSR1, as a minimum. 10 Method 1042 of MIL

36、-STD-750, test condition B. Method 1042 of MIL-STD-750, test condition B. 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1

37、 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A. Method 1042 of MIL-STD-750, test condition A. 13 Subgroups 2 and 3 of table I herein. IGSSF1 = 20 nA dc or 100 pe

38、rcent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroups 2 and 3 of table I h

39、erein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial val

40、ue. 17 Method 1081 of MIL-STD-750 (see 4.3.4). End-points: Subgroup 2 of table I herein. Method 1081 of MIL-STD-750 (see 4.3.4). End-points: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGS

41、SR1, IDSS1, VGS(th)1,and rDS(ON) shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/685F

42、 7 4.3.1 Gate stress test. Apply VGS= -24 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current . IAS= ID1. b. Gate voltage (VGS) 12 V. c. Gate to source resistor (RGS) 25 RGS 200. d. Initial case temperature (TC) +25C, +10C, -5C. e. Inductance (L) . ( )212EIV V

43、VASDBR DDBRmH minimum. f. Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) . VDD= 50 V dc. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, t

44、H, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltageAll

45、leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-1

46、9500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-

47、VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/685F 8 4.4.2.1 Group B

48、inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 SEM. B4 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C, t =