DLA SMD-5962-96683-1996 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 4 BIT ARITHMETIC LOGIC UNIT MONOLITHIC SILICON《抗辐射互补金属氧化物半导体4BIT位运算硅单片电路数字微电路》.pdf

《DLA SMD-5962-96683-1996 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 4 BIT ARITHMETIC LOGIC UNIT MONOLITHIC SILICON《抗辐射互补金属氧化物半导体4BIT位运算硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96683-1996 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS 4 BIT ARITHMETIC LOGIC UNIT MONOLITHIC SILICON《抗辐射互补金属氧化物半导体4BIT位运算硅单片电路数字微电路》.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDREV SHEETREVSHEET 15 16 17REV STATUSOF SHEETSREVSHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Larry T. Gauder DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDMICROCIRCUITDRAWINGTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMEN

2、TSAND AGENCIES OF THEDEPARTMENT OF DEFENSEAMSC N/A CHECKED BYMonica L. PoelkingMICROCIRCUIT, DIGITAL, RADIATION HARDENEDCMOS, 4 BIT ARITHMETIC LOGIC UNIT, MONOLITHICSILICONAPPROVED BYMonica L. PoelkingDRAWING APPROVAL DATE96-01-04SIZEACAGE CODE67268 5962-96683REVISION LEVELSHEET 1 OF 17DESC FORM 193

3、JUL 94 5962-E186-96DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA 5962-96683REVISI

4、ON LEVEL SHEET2DESC FORM 193AJUL 941. SCOPE1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two productassurance classes consisting of military high reliability (device classes Q and M) and space application (device class V), and achoice of

5、case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class Mmicrocircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use ofMIL-STD-883 in conjunction with compliant non-JAN devices“.

6、When available, a choice of Radiation Hardness Assurance (RHA)levels are reflected in the PIN.1.2 PIN. The PIN shall be as shown in the following example:5962 R 96683 01 V X C * * * * * * * * * * * * * * * * Federal RHA Device Device Case Lead stock class designator type class outline finishdesignat

7、or (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number 1.2.1 RHA designator. Device class M RHA marked devices shall meet the MIL-I-38535 appendix A specified RHA levels andshall be marked with the appropriate RHA designator. Device classes Q and V RHA marked dev

8、ices shall meet the MIL-I-38535specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type Generic number Circuit function01 40181B Radiation h

9、ardened CMOS 4-bitarithmetic logic unit 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for non-JAN class B microcircuit

10、s inaccordance with 1.2.1 of MIL-STD-883Q or V Certification and qualification to MIL-I-385351.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleJ CDIP2-T24 24 dual-in-line packageX CDFP4-F24 24

11、 flat package1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-I-38535 for classes Qand V. Finish letter “X“ shall not be marked on the microcircuit or its packaging. The “X“ designation is for use in specificationswhen lead finishes A, B, an

12、d C are considered acceptable and interchangeable without preference.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA 5962-96683REVISION LEVEL SHEET3DESC FORM 193AJUL

13、 941.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (V ) -0.5 V dc to +20 V dcDDInput voltage range -0.5 V dc to V + 0.5 VdcDDDC input current, any one input 10 mADevice dissipation per output transistor 100 mWStorage temperature range (T ) -65 C to +150 CSTGLead temperature (soldering, 10

14、 seconds) +265 CThermal resistance, junction-to-case ( ):JCCase J 25C/WCase X 24C/WThermal resistance, junction-to-ambient ):JACase J 65C/WCase X 89C/WJunction temperature (T ) . +175 CJMaximum power dissipation at T = +125C (P ): 4/A DCase J 0.77 WCase X 0.56 W1.4 Recommended operating conditions.S

15、upply voltage range (V ) 3.0 V dc to +18 V dcDDCase operating temperature range (T ) -55 C to +125 CCInput voltage (V ) . 0 V to VIN DDOutput voltage (V ) 0 V to VOUT DDRadiation features:Total dose 1 x 10 Rads (Si)5Single event phenomenon (SEP) effectivelinear energy threshold, no upsets or latchup

16、 (see 4.4.4.4) . 75 MEV/(cm /mg) 5/2Dose rate upset (20 ns pulse) . 5 x 10 Rads(Si)/s 5/8 Dose rate latch-up 2 x 10 Rads(Si)/s 5/8Dose rate survivability . 5 x 10 Rads(Si)/s 5/112. APPLICABLE DOCUMENTS2.1 Government specification, standards, bulletin, and handbook. Unless otherwise specified, the fo

17、llowing specification,standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications andStandards specified in the solicitation, form a part of this drawing to the extent specified herein.SPECIFICATIONMILITARYMIL-I-38535 - Integrated Circuits

18、, Manufacturing, General Specification for.STANDARDSMILITARYMIL-STD-883 - Test Methods and Procedures for Microelectronics.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Microcircuit Case Outlines.1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended

19、 operation at the maximumlevels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to V .SS3/ The limits for the parameters specified herein shall apply over the full specified V range and case temperature range of -55 CCCto +125 C unless otherw

20、ise noted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating isbased on ) at the following rate:JACase J . 15.4 mW/C Case X . 11.2 mW/C5/ Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or netwo

21、rking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA 5962-96683REVISION LEVEL SHEET4DESC FORM 193AJUL 94BULLETINMILITARYMIL-BUL-103 - List of Standardized Military Drawings (SMDs).HANDBOOKMILITARYMIL-HDBK-780 - Standardized

22、 Military Drawings.(Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisitionfunctions should be obtained from the contracting activity or as directed by the contracting activity.)2.2 Order of precedence. In the event of a confli

23、ct between the text of this drawing and the references cited herein, the text ofthis drawing shall take precedence.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883,“Provisions for the use of MIL-STD-883 in conj

24、unction with compliant non-JAN devices“ and as specified herein. The individualitem requirements for device classes Q and V shall be in accordance with MIL-I-38535 and as specified herein or as modified in thedevice manufacturers Quality Management (QM) plan. The modification in the QM plan shall no

25、t affect the form, fit, or function asdescribed herein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-STD-883 (see 3.1 herein) for device class M and MIL-I-38535 for device classes Q and V herein. 3.2.1 Case outlines.

26、 The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth table. The truth table shall be as specified on figure 2.3.2.4 Logic diagram. The logic diagrams shall be as specified on figure 3.3.2.5 Radi

27、ation test connections. The radiation test connections shall be as specified in table III herein.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as s

28、pecified in table I and shall apply over the full case operatingtemperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking. The part shall be marked with

29、the PIN listed in 1.2 herein. Marking for device class M shall be in accordance withMIL-STD-883 (see 3.1 herein). In addition, the manufacturers PIN may also be marked as listed in MIL-BUL-103. Marking fordevice classes Q and V shall be in accordance with MIL-I-38535.3.5.1 Certification/compliance m

30、ark. The compliance mark for device class M shall be a “C“ as required in MIL-STD-883 (see3.1 herein). The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-I-38535.3.6 Certificate of compliance. For device class M, a certificate of compliance shall be required

31、 from a manufacturer in order to belisted as an approved source of supply in MIL-BUL-103 (see 6.7.2 herein). For device classes Q and V, a certificate of complianceshall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.1 herein). The ce

32、rtificate of compliance submitted to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm thatthe manufacturers product meets, for device class M, the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Qand V, the requirements of MIL-I-38535 and the

33、 requirements herein.3.7 Certificate of conformance. A certificate of conformance as required for device class M in MIL-STD-883 (see 3.1 herein) orfor device classes Q and V in MIL-I-38535 shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for devic

34、e class M. For device class M, notification to DESC-EC of change of product (see 6.2 herein)involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROC

35、IRCUIT DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA 5962-96683REVISION LEVEL SHEET5DESC FORM 193AJUL 943.9 Verification and review for device class M. For device class M, DESC, DESCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applic

36、able required documentation. Offshore documentation shall be made available onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuitgroup number 39 (see MIL-I-38535, appendix A).4. QUALITY ASS

37、URANCE PROVISIONS4.1 Sampling and inspection. For device class M, sampling and inspection procedures shall be in accordance with MIL-STD-883 (see 3.1 herein). For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-I-38535 or as modified in the device manufactur

38、ers quality management (QM) plan. The modification in the QM plan shall notaffect form, fit, or function as described herein.4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall beconducted on all devices prior to quality conformance inspecti

39、on. For device classes Q and V, screening shall be in accordancewith MIL-I-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection.4.2.1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C, or

40、 D. The test circuit shall be maintained by the manufacturer under document revision levelcontrol and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify theinputs, outputs, biases, and power dissipation, as applicable, in accordance with the i

41、ntent specified in test method1015.(2) T = +125 C, minimum.Ab. Interim and final electrical test parameters shall be as specified in table IIA herein.2.2 Additional criteria for device classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall b

42、e as specified in the devicemanufacturers QM plan in accordance with MIL-I-38535. The burn-in test circuit shall be maintained under documentrevision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-I-38535 andshall be made available to the acquiring or

43、preparing activity upon request. The test circuit shall specify the inputs, outputs,biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screen

44、ing for device class V beyond the requirements of device class Q shall be as specified in appendix B ofMIL-I-38535 or as modified in the device manufacturers quality management (QM) plan.4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shal

45、l be inaccordance with MIL-I-38535. Inspections to be performed shall be those specified in MIL-I-38535 and herein for groups A, B, C,D, and E inspections (see 4.4.1 through 4.4.4).4.3.1 Electrostatic discharge sensitivity (ESDS) qualification inspection. ESDS testing shall be performed in accordanc

46、e with MIL-STD-883, method 3015. ESDS testing shall be measured only for initial qualification and after process or design changes whichmay affect ESDS classification.4.4 Conformance inspection. Quality conformance inspection for device class M shall be in accordance with MIL-STD-883 (see3.1 herein)

47、 and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 ofMIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspectionfor classes Q and V shall be in accordance with MIL-I-38535 o

48、r as specified in the QM plan including groups A, B, C, D, and Einspections and as specified herein except where option 2 of MIL-I-38535 permits alternate in-line control testing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA 5962-96683REVISION LEVEL SHEET6DESC FORM 193AJUL 94TABLE I. Electrical performance characteristics. Test SymbolConditions-55 C 4.5 V, V 9.0 V, V 13.5 V, V 4.5 V, V 9.0 V, V 13.5 V, V OHV /2DDV OLV /2DDVV = 2