DLA SMD-5962-96680 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL 4-BIT LATCH MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重4-BIT闭锁装置硅单片电路数字微电路》.pdf

《DLA SMD-5962-96680 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL 4-BIT LATCH MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重4-BIT闭锁装置硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96680 REV C-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL 4-BIT LATCH MONOLITHIC SILICON《抗辐射互补金属氧化物半导体双重4-BIT闭锁装置硅单片电路数字微电路》.pdf（21页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R233-97. 97-02-28 Monica L. PoelkingB Changes in accordance with NOR 5962-R419-97. 97-08-14 Monica L. PoelkingC Update boilerplate and appendix A. Editorial changes throughout. - tmh00-06-05Monica L. PoelkingREVSH

2、EETREV CCCCCCSHEET 15 16 17 18 19 20REV STATUS REV CCCCCCCCCCCCCCOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Rick C. OfficerDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYMonica L. PoelkingCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYM

3、onica L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE96-01-05MICROCIRCUIT, DIGITAL, RADIATIONHARDENED CMOS, DUAL 4-BIT LATCH,MONOLITHIC SILICONAMSC N/AREVISION LEVELCSIZEACAGE CODE672685962-96680SHEET1 OF 20DSCC FORM 2233APR 97 5962-E238-00DISTRIBUTION STATEMENT A. Approved

4、for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96680DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope

5、. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of R

6、adiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 R 96680 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead stock class designator type class outline finishdesignator (se

7、e 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535

8、, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 4508B Radiation hardened CMOS dual4-bit latch02 4

9、508BN Radiation hardened CMOS dual4-bit latch with neutron irradiated die1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for M

10、IL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Packa

11、ge styleL CDIP4-T24 24 Dual-in-line packageX CDFP4-F24 24 Flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

12、m IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96680DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (VDD). -0.5 V dc to +20 V dcInput voltage range -0.5 V dc to VDD + 0.5 VdcDC input current,

13、any one input 10 mADevice dissipation per output transistor 100 mWStorage temperature range (TSTG) -65C to +150CLead temperature (soldering, 10 seconds). +265CThermal resistance, junction-to-case (JC):Case L . 25C/WCase X. 24C/WThermal resistance, junction-to-ambient (JA):Case L . 65C/WCase X. 89C/W

14、Junction temperature (TJ). +175CMaximum power dissipation at TA = +125C (PD): 4/Case L . 0.77 WCase X. 0.56 W1.4 Recommended operating conditions.Supply voltage range (VDD). 3.0 V dc to +18 V dcCase operating temperature range (TC) . -55C to +125CInput voltage (VIN). 0 V to VDDOutput voltage (VOUT)

15、. 0 V to VDDRadiation features:Total dose . 1 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold, no upsets or latchup (see 4.4.4.5). 75 MEV/(cm2/mg) 5/Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/Dose rate latch-up . 2 x 108Rads(Si)/s 5/Dose rate survivability . 5 x

16、1011Rads(Si)/s 5/Neutron irradiated 6/ . 1 x 1014neutrons/cm22. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these

17、 documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF

18、DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade

19、performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to VSS.3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature range of-55C to +125C unless otherwise noted.4/ If device power exceeds package di

20、ssipation capability, provide heat sinking or derate linearly (the derating is based on JA)at the following rate:Case L 15.4 mW/CCase X . 11.2 mW/C5/ Guaranteed by design or process but not tested.6/ Device type 02 only.Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

21、ense from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96680DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET4DSCC FORM 2234APR 97HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unles

22、s otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the reference

23、s cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordanc

24、e withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-

25、38535, appendix A for non-JAN class level B devices and as specifiedherein.3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MI

26、L-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth tables. The

27、truth tables shall be as specified on figure 2.3.2.4 Block diagrams. The block diagrams shall be as specified on figure 3.3.2.5 Radiation exposure circuit. The radiation test connections shall be as specified in table III herein herein.3.3 Electrical performance characteristics and postirradiation p

28、arameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the fullcase operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the

29、 subgroups specified in table IIA. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN nu

30、mber is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M

31、 shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certif

32、icate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order

33、to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-P

34、RF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of

35、 microcircuits deliveredto this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96680DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET5DSCC FORM 2234APR 973.8 Notification of cha

36、nge for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acqu

37、iring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall

38、be inmicrocircuit group number 40 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) pla

39、n. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-3853

40、5, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria for devic

41、e class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The test circuit shallspecify the inpu

42、ts, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125C, minimum.b. Interim and final electrical test parameters shall be as specified in table IIA herein.4.2.2 Additional criteria for device classes Q and V.a. The burn-in

43、test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufacturers Technology Review Boar

44、d (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod 1015 of MIL-STD-883.b. Inter

45、im and final electrical test parameters shall be as specified in table IIA herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V. Qualification inspection f

46、or device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).4.4 Conformance inspection. Technology conformance inspection for classes Q and V sha

47、ll be in accordance withMIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 ofMIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be inaccordance with MIL-PRF-38535, appendix A and as

48、specified herein. Inspections to be performed for device class M shall bethose specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96680DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELCSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.LimitsTest Symbol Conditions-55C 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL VDD/2VOL VDD