DLA MIL-PRF-19500 646 E-2008 SEMICONDUCTOR DEVICE DIODE SILICON POWER RECTIFIER ULTRAFAST TYPES 1N6774 THROUGH 1N6777 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/646E 26 November 2008 SUPERSEDING MIL-PRF-19500/646 D 25 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and

2、 Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 This specification covers the performance requirements for silicon, ultrafast, power rectifier diode. Four levels of product a

3、ssurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (2 pin, isolated - TO-257). 1.3 Maximum ratings. TC= 25C unless otherwise specified. Types VRWM(1) ID = 10 A dc IF (1) (2) TC =+100C IFSM(1) tp= 8.3 ms RJC(1) RJA (1) TSTG and TJ1N6774 1N6

4、775 1N6776 1N6777 Vdc 50 100 150 200 A dc 15 A (pk) 180 C/W 2.0 C/W 40 C -65 to +150 (1) Each individual diode. (2) Derate at 300 mA/C above TC= +100C. 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics are at +25C, and for each diode. Types VF1 IF

5、 = 8 A dc VF2 IF =15 A dc IR1(see 1.3) VR = 0.8 VRWMIR2 VR = 0.8 VRWM (see 1.3) TC = +100C trrCJVR = 5 V f = 1 MHz All devices V dc 1.00 V dc 1.15 A dc 10 A dc 500 ns 35 pF 300 AMSC N/A FSC 5961 Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columb

6、us, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil. The documentation and process conv

7、ersion measures necessary to comply with this revision shall be completed by 27 February 2008. INCH-POUNDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/646E 2 SCHEMATIC Configuration Terminal Description 1 Cathode 2 Anode 1 2 Dimension

8、s Symbol Inches Millimeters Min Max Min Max BL .410 .430 10.4 10.9 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .500 .750 12.70 19.05 LO .150 typ 3.81 typ LS .200 bsc 5.08 bsc MHD .140 .150 3.55 3.80 MHO .527 .537 13.4 13.6 TL .645 .665 16.4 16.9 TT .040 .050 1.02 1.27 TW .410 .420 10.4 10.7 * F

9、IGURE 1. Physical dimensions and configuration (2 pin, isolated) (TO-257). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/646E 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4,

10、or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all s

11、pecified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified

12、 herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devi

13、ces. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in

14、the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Gen

15、eral. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified

16、manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

17、 MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Polarity. Polarity and terminal configuration sh

18、all be in accordance with figure 1 herein. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be group A as speci

19、fied herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/646E 4 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality a

20、nd shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspectio

21、n (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision

22、of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (JANTX, JANTXV, and JANS le

23、vels). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see Measurement Appendix E, tab

24、le E-IV of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 and 10 Not applicable Not applicable 11 IR1and VF1IR1and VF112 See 4.3.1, t = 240 hours See 4.3.1, t = 48 hours 13 Subgroups 2 and 3 of table I herein; IR1 100 percent of

25、 initial value or 2.5 A, whichever is greater; VF1 100 mV. Subgroup 2 of table I herein; IR1 100 percent of initial value or 2.5 A whichever is greater; VF1 100 mV. (1) Thermal impedance shall be performed any time after temperature cycling, screen 3a, and does not need to be repeated in screening r

26、equirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. TJ= +125C; VR= 0.8 of rated VRWM(see 1.3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/646E 5 * 4.3.

27、2 Thermal impedance The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750, using the guidelines in that method for determining IM, IH, tH, tSW, (VCand VHwhere appropriate). See table II, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspecti

28、on shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I, herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of

29、table III herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIa (JANS) and table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requ

30、irements shall be in accordance with the applicable steps of table III herein. 4.4.2.1 Group B inspection, appendix E, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 IFor IO= 1.25 A to 10 A; TJ= +85C minimum, for 2,000 cycles minimum. 4.4.2.2 Group B inspection, appendix E, t

31、able E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 IFor IO= 1.25 A to 10 A; TJ= +85C minimum, for 2,000 cycles minimum. B5 Not applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing i

32、n appendix E, table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition A, 5 p

33、ounds, t = 15 seconds 3 seconds. C5 4081 See 1.3, RJC 2 C/W. C6 1037 IFor IO= 1.25 A to 10 A; TJ= +85C minimum, for 6,000 cycles minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table II herein. Electrical me

34、asurements (end-points) and delta requirements shall be in accordance with the applicable steps and footnotes of table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measureme

35、nt shall be as specified in section 4 of MIL-STD-750. * 4.5.4 Thermal resistance. Thermal resistance measurement shall be performed in accordance with method 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tSW. See, table E-IX, group E, Subgroup 4 of MIL-PRF-1

36、9500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/646E 6 * TABLE I. Group A inspection. 1/ 2/ Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal i

37、mpedance 3101 See 4.3.2. ZJXC/W Breakdown voltage 1N6774 1N6775 1N6776 1N6777 4022 IR= 10 A dc, pulsed. 3/ VBR 50 100 150 200 V dc Forward voltage 4011 IF= 8 A dc, pulsed. 3/ IF= 15 A dc, pulsed. 3/ VF1 VF21.00 1.15 V dc V dc Reverse leakage current 4016 DC method; pulsed. 3/ VR= 0.8 of VRWM (see 1.

38、3). IR110 A dc Subgroup 3 High temperature operation: TC= +100C minimum. Reverse leakage current 4016 DC method; pulsed. 3/ VR= 0.8 of VRWM(see 1.3). IR2500 A dc Low temperature operation: TA= -55C minimum. Forward voltage 4011 IF= 15 A dc, pulsed. 3/ VF31.3 V dc Subgroup 4 Scope display evaluation

39、4/ 4023 Reverse recovery time measurements 4031 Condition B1. IF= .5A, IRM= 1A, IR (REC)= .25A trr35 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/646E 7 * TABLE I. Group A inspection Continued. 1/ 2/

40、 Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroups 5 and 6 Not applicable Subgroup 7 Junction capacitance 4001 VR= 5 V dc; f = 1.0 MHz. CJ300 pF 1/ For sampling plan, see MIL-PRF-19500. 2/ Each individual diode. 3/ Pulse test: Pulse width = 300 s, duty cycle 2 percent. 4/

41、 The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 50 to 100 A/division and 50 to 100 V/division. Reverse current over the knee shall be at least 500 A. Each device may exhibit a slightly rounded characteristic and any discontinuity or dynam

42、ic instability of the trace shall be cause for rejection. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/646E 8 TABLE II. Group E inspection (all quality levels) for qualification and requalification only. Inspection MIL-STD-750 Sampli

43、ng plan Method Conditions Subgroup 1 22 devices c = 0 Temperature cycling 1051 500 cycles Hermetic seal 1071 Fine leak Test condition H; 5 x 10-7atm cc/s Gross leak Test condition C or K Electrical measurements See table III herein, steps 1, 2, 3, 4, and 5 Subgroup 2 Steady-state reverse bias Electr

44、ical measurements 1038 Test condition A, t = 1,000 hours, TJ= +125C, VR= 0.8 of rated VRWM (see 1.3) See table III herein, steps 1 and 2 22 devices c = 0 Subgroup 4 Thermal impedance curves See MIL-PRF-19500 Subgroup 5 Not applicable Provided by IHSNot for ResaleNo reproduction or networking permitt

45、ed without license from IHS-,-,-MIL-PRF-19500/646E 9 TABLE III. Groups A, B, C, and E electrical and delta measurements. 1/ 2/ 3/ 4/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1 Forward voltage 4011 IF= 15 A dc pulsed VF21.15 V dc 2 Reverse leakage current 4016 VR = 0.8

46、 of percent VRWM(see 1.3), dc method, pulsed IR110 A dc 3 Forward voltage 4011 IF= 15 A dc pulsed VF2100 mV dc from initial reading 4 Reverse leakage current 4016 VR = 0.8 of percent VRWM(see 1.3), dc method, pulsed IR1100 percent of initial value or 2.5 A dc which- ever is greater. 5 Thermal impeda

47、nce 3101 See 4.3.2 ZJX1.80 C/W 5/ 6 Reverse recovery time 4031 See table I, subgroup 4 herein trr34 ns 1/ The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table III herein, steps 1 and 2. b. Subgroup 4, see table III herein, steps 1, 2, 3, 4, 5,

48、and 6. c. Subgroup 5, see table III herein, steps 1, 2, 3, 4, and 6. 2/ The electrical measurements for table E-VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table III herein, steps 1 2, and 6. b. Subgroup 3, see table III herein, steps 1, 2, 5, and 6. c. Subgroup 6, see table III herein, steps 1 and 2. 3/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: a. Subgroup 2 see table III herein, steps 1, 2, and 5 for all levels. b. Subgroup 3, see table III herein, steps 1 and 2 for all levels. c. Subgroup 6, see table III her