ASTM F1467-2011 Standard Guide for Use of an X-Ray Tester (&x2248 10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits《半导体装置及集成电路电离辐射效应X.pdf

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1、Designation: F1467 11Standard Guide forUse of an X-Ray Tester (10 keV Photons) in IonizingRadiation Effects Testing of Semiconductor Devices andMicrocircuits1This standard is issued under the fixed designation F1467; the number immediately following the designation indicates the year oforiginal adop

2、tion or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide covers recommended procedures for the useof X-ray testers (th

3、at is, sources with a photon spectrum having10 keV mean photon energy and 50 keV maximum energy)in testing semiconductor discrete devices and integrated cir-cuits for effects from ionizing radiation.1.2 The X-ray tester may be appropriate for investigatingthe susceptibility of wafer level or delidde

4、d microelectronicdevices to ionizing radiation effects. It is not appropriate forinvestigating other radiation-induced effects such as single-event effects (SEE) or effects due to displacement damage.1.3 This guide focuses on radiation effects in metal oxidesemiconductor (MOS) circuit elements, eith

5、er designed (as inMOS transistors) or parasitic (as in parasitic MOS elements inbipolar transistors).1.4 Information is given about appropriate comparison ofionizing radiation hardness results obtained with an X-raytester to those results obtained with cobalt-60 gamma irradia-tion. Several differenc

6、es in radiation-induced effects caused bydifferences in the photon energies of the X-ray and cobalt-60gamma sources are evaluated. Quantitative estimates of themagnitude of these differences in effects, and other factors thatshould be considered in setting up test protocols, are presented.1.5 If a 1

7、0-keV X-ray tester is to be used for qualificationtesting or lot acceptance testing, it is recommended that suchtests be supported by cross checking with cobalt-60 gammairradiations.1.6 Comparisons of ionizing radiation hardness results ob-tained with an X-ray tester with results obtained with aLINA

8、C, with protons, etc. are outside the scope of this guide.1.7 Current understanding of the differences between thephysical effects caused by X-ray and cobalt-60 gamma irradia-tions is used to provide an estimate of the ratio (number-of-holes-cobalt-60)/(number-of-holes-X-ray). Several cases aredefin

9、ed where the differences in the effects caused by X-raysand cobalt-60 gammas are expected to be small. Other caseswhere the differences could potentially be as great as a factorof four are described.1.8 It should be recognized that neither X-ray testers norcobalt-60 gamma sources will provide, in ge

10、neral, an accuratesimulation of a specified system radiation environment. Theuse of either test source will require extrapolation to the effectsto be expected from the specified radiation environment. In thisguide, we discuss the differences between X-ray tester andcobalt-60 gamma effects. This disc

11、ussion should be useful asbackground to the problem of extrapolation to effects expectedfrom a different radiation environment. However, the processof extrapolation to the expected real environment is treatedelsewhere (1, 2).21.9 The time scale of an X-ray irradiation and measurementmay be much diff

12、erent than the irradiation time in the expecteddevice application. Information on time-dependent effects isgiven.1.10 Possible lateral spreading of the collimated X-raybeam beyond the desired irradiated region on a wafer is alsodiscussed.1.11 Information is given about recommended experimentalmethod

13、ology, dosimetry, and data interpretation.1.12 Radiation testing of semiconductor devices may pro-duce severe degradation of the electrical parameters of irradi-ated devices and should therefore be considered a destructivetest.1.13 The values stated in SI units are to be regarded asstandard. No othe

14、r units of measurement are included in thisstandard.1.14 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and determine the applica-bility o

15、f regulatory limitations prior to use.1This guide is under the jurisdiction of ASTM Committee F01 on Electronicsand is the direct responsibility of Subcommittee F01.11 on Nuclear and SpaceRadiation Effects.Current edition approved Oct. 1, 2011. Published October 2011. Originallyapproved in 1993. Las

16、t previous edition approved in 2005 as F1467 - 99(2005)1.DOI: 10.1520/F1467-11.2The boldface numbers in parentheses refer to the list of references at the end ofthis guide.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.2. Referenced

17、 Documents2.1 ASTM Standards:3E170 Terminology Relating to Radiation Measurements andDosimetryE666 Practice for CalculatingAbsorbed Dose From Gammaor X RadiationE668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for DeterminingAbsorbed Dosein Radiation-Hardness Testing of El

18、ectronic DevicesE1249 Practice for Minimizing Dosimetry Errors in Radia-tion Hardness Testing of Silicon Electronic Devices UsingCo-60 SourcesE1894 Guide for Selecting Dosimetry Systems for Applica-tion in Pulsed X-Ray Sources2.2 International Commission on Radiation Units andMeasurements Reports:IC

19、RU Report 33Quantities and Units for Use in Radia-tion Protection42.3 United States Department of Defense Standards:MIL-STD-883, Method 1019, Ionizing Radiation (TotalDose) Test Method53. Terminology3.1 Definitions:3.1.1 absorbed-dose enhancement, nincrease (or de-crease) in the absorbed dose (as co

20、mpared with the equilibriumabsorbed dose) at a point in a material of interest; this can beexpected to occur near an interface with a material of higher orlower atomic number.3.1.2 average absorbed dose, nmass weighted mean ofthe absorbed dose over a region of interest.3.1.3 average absorbed-dose en

21、hancement factor, nratioof the average absorbed dose in a region of interest to theequilibrium absorbed dose.NOTE 1For a description of the necessary conditions for measuringequilibrium absorbed dose see the term charged particle equilibrium inTerminology E170 which provides definitions and descript

22、ions of otherapplicable terms of this guide. In addition, definitions appropriate to thesubject of this guide may be found in ICRU Report 33.NOTE 2The SI unit for absorbed dose is the gray (Gy), defined as oneJ/kg. The commonly used unit, the rad (radiation absorbed dose), isdefined in terms of the

23、SI units by 1 rad = 0.01 Gy. (For additionalinformation on calculation of absorbed dose see Practice E666.)3.1.4 equilibrium absorbed dose, nabsorbed dose at someincremental volume within the material in which the conditionof electron equilibrium (the energies, number, and direction ofcharged partic

24、les induced by the radiation are constantthroughout the volume) exists (see Terminology E170).3.1.4.1 DiscussionFor practical purposes the equilibriumabsorbed dose is the absorbed dose value that exists in amaterial at a distance in excess of a minimum distance fromany interface with another materia

25、l. This minimum distancebeing greater than the range of the maximum energy secondaryelectrons generated by the incident photons.3.1.5 ionizing radiation effects, nthe changes in the elec-trical parameters of a microelectronic device resulting fromradiation-induced trapped charge. These are also some

26、timesreferred to as total dose effects.3.1.6 time dependent effects, nthe change in electricalparameters caused by the formation and annealing of radiation-induced electrical charge during and after irradiation.4. Significance and Use4.1 Electronic circuits used in many space, military andnuclear po

27、wer systems may be exposed to various levels ofionizing radiation dose. It is essential for the design andfabrication of such circuits that test methods be available thatcan determine the vulnerability or hardness (measure ofnonvulnerability) of components to be used in such systems.4.2 Manufacturer

28、s are currently selling semiconductor partswith guaranteed hardness ratings, and the military specificationsystem is being expanded to cover hardness specification forparts. Therefore test methods and guides are required tostandardize qualification testing.4.3 Use of low energy (10 keV) X-ray source

29、s has beenexamined as an alternative to cobalt-60 for the ionizingradiation effects testing of microelectronic devices (3, 4, 5, 6).The goal of this guide is to provide background informationand guidance for such use where appropriate.NOTE 3Cobalt-60The most commonly used source of ionizingradiation

30、 for ionizing radiation (“total dose”) testing is cobalt-60. Gammarays with energies of 1.17 and 1.33 MeV are the primary ionizing radiationemitted by cobalt-60. In exposures using cobalt-60 sources, test specimensmust be enclosed in a lead-aluminum container to minimize dose-enhancement effects cau

31、sed by low-energy scattered radiation (unless ithas been demonstrated that these effects are negligible). For this lead-aluminum container, a minimum of 1.5 mm of lead surrounding an innershield of 0.7 to 1.0 mm of aluminum is required. (See 8.2.2.2 and PracticeE1249.)4.4 The X-ray tester has proven

32、 to be a useful ionizingradiation effects testing tool because:4.4.1 It offers a relatively high dose rate, in comparison tomost cobalt-60 sources, thus offering reduced testing time.4.4.2 The radiation is of sufficiently low energy that it canbe readily collimated. As a result, it is possible to ir

33、radiate asingle device on a wafer.4.4.3 Radiation safety issues are more easily managed withan X-ray irradiator than with a cobalt-60 source. This is dueboth to the relatively low energy of the photons and due to thefact that the X-ray source can easily be turned off.4.4.4 X-ray facilities are frequ

34、ently less costly than compa-rable cobalt-60 facilities.4.5 The principal radiation-induced effects discussed in thisguide (energy deposition, absorbed-dose enhancement,electron-hole recombination) (see Appendix X1) will remainapproximately the same when process changes are made toimprove the perfor

35、mance of ionizing radiation hardness of a3For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe ASTM website.4Available from Inte

36、rnational Commission on Radiation Units and Measure-ments (ICRU), 7910 Woodmont Ave., Suite 400, Bethesda, MD 20841-3095,http:/www.icru.org.5Available from Standardization Documents Order Desk, DODSSP, Bldg. 4,Section D, 700 Robbins Ave., Philadelphia, PA 19111-5098, http:/dodssp.daps.dla.mil.F1467

37、112part that is being produced. This is the case as long as thethicknesses and compositions of the device layers are substan-tially unchanged. As a result of this insensitivity to processvariables, a 10-keV X-ray tester is expected to be an excellentapparatus for process improvement and control.4.6

38、Several published reports have indicated success inintercomparing X-ray and cobalt-60 gamma irradiations usingcorrections for dose enhancement and for electron-hole recom-bination. Other reports have indicated that the present under-standing of the physical effects is not adequate to explainexperime

39、ntal results. As a result, it is not fully certain that thedifferences between the effects of X-ray and cobalt-60 gammairradiation are adequately understood at this time. (See 8.2.1and Appendix X2.) Because of this possible failure of under-standing of the photon energy dependence of radiation effec

40、ts,if a 10-keV X-ray tester is to be used for qualification testingor lot acceptance testing, it is recommended that such testsshould be supported by cross checking with cobalt-60 gammairradiations. For additional information on such comparison,see X2.2.4.4.7 Because of the limited penetration of 10

41、-keV photons,ionizing radiation effects testing must normally be performedon unpackaged devices (for example, at wafer level) or onunlidded devices.5. Interferences5.1 Absorbed-Dose EnhancementAbsorbed-dose en-hancement effects (see 8.2.1 and X1.3) can significantlycomplicate the determination of th

42、e absorbed dose in the regionof interest within the device under test. In the photon energyrange of the X-ray tester, these effects should be expected whenthere are regions of quite different atomic number withinhundreds of nanometres of the region of interest in the deviceunder test.NOTE 4An exampl

43、e of a case where significant absorbed doseenhancement effects should be expected is a device with a tantalumsilicide metallization within 200 nm of the SiO2gate oxide.5.2 Electron-Hole RecombinationOnce the absorbed dosein the sensitive region of the device under test is determined,interpretation o

44、f the effects of this dose can be complicated byelectron-hole recombination (see 8.2.1 and X1.5).5.3 Time-Dependent EffectsThe charge in device oxidesand at silicon-oxide interfaces produced by irradiation maychange with time. Such changes take place both during andafter irradiation. Because of this

45、, the results of electricalmeasurements corresponding to a given absorbed dose can behighly dependent upon the dose rate and upon the time duringand after the irradiation at which the measurement takes place(see X1.7 for further detail).NOTE 5The dose rates used for X-ray testing are frequently much

46、higher than those used for cobalt-60 testing. For example, cobalt-60testing is specified by Military Test Method 1019.4 to be in the range of0.5 to 3 Gy(Si)/s (50 to 300 rads/(Si)/s). For comparison, X-ray testing iscommonly carried out in the range of 2 to 30 Gy(Si)/s (200 to 3000rads(Si)/s).5.4 Ha

47、ndlingAs in any other type of testing, care must betaken in handling the parts. This especially applies to parts thatare susceptible to electrostatic discharge damage.6. Apparatus6.1 X-Ray Tester A suitable X-ray tester (see Ref (3)consists of the following components:6.1.1 Power Supply The power su

48、pply typically supplies10 to 100 mA at 25 to 60 keV (constant potential) to the X-raytube.6.1.2 X-Ray TubeIn a typical commercial X-ray tube apartially focused beam of electrons strikes a water-cooledmetal target. The target material most commonly used forionizing radiation effects testing is tungst

49、en, though some workhas been done using a copper target. X-ray tubes are limited bythe power they can dissipate. A maximum power of 3.5 kW istypical.6.1.3 CollimatorA collimator is used to limit the regionon a wafer which is irradiated. A typical collimator is con-structed of 0.0025 cm of tantalum.6.1.4 FilterA filter is used to remove the low-energyphotons produced by the X-ray tube. A typical filter is 0.0127cm of aluminum.6.1.5 DosimeterA dosimetric system is required to mea-sure the dose delivered by the X-ray tube (see Guide E1894).NOTE 6X-ray