ASTM E1636-2004 Standard Practice for Analytically Describing Sputter-Depth-Profile Interface Data by an Extended Logistic Function《用扩展的逻辑函数分析描述溅射深度剖面接口数据的标准规程》.pdf
《ASTM E1636-2004 Standard Practice for Analytically Describing Sputter-Depth-Profile Interface Data by an Extended Logistic Function《用扩展的逻辑函数分析描述溅射深度剖面接口数据的标准规程》.pdf》由会员分享,可在线阅读,更多相关《ASTM E1636-2004 Standard Practice for Analytically Describing Sputter-Depth-Profile Interface Data by an Extended Logistic Function《用扩展的逻辑函数分析描述溅射深度剖面接口数据的标准规程》.pdf(7页珍藏版)》请在麦多课文档分享上搜索。
1、Designation: E 1636 04Standard Practice forAnalytically Describing Sputter-Depth-Profile Interface Databy an Extended Logistic Function1This standard is issued under the fixed designation E 1636; the number immediately following the designation indicates the year oforiginal adoption or, in the case
2、of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Scope1.1 This practice covers a systematic method for analyzingsputter-depth-profile interface data a
3、nd for accurately charac-terizing the shape of the interface region. Interface profile dataare described with an appropriate analytic function; the param-eters of this function define the interface width, its asymmetry,and its depth from the original surface. The use of this practiceis recommended i
4、n order that the shapes of compositionprofiles of interfaces acquired with different instruments andtechniques on different materials can be unambiguously com-pared and interpreted.1.2 This practice is intended to be used to describe the shapeof depth profile data obtained at an interface between tw
5、odissimilar materials for that case in which the measuredconcentration of the outer material goes from 100 to 0 % andthe inner material goes from 0 to 100 %.1.3 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user o
6、f this standard to establish appro-priate safety and health practices and determine the applica-bility of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:2E 673 Terminology Relating to Surface AnalysisE 1127 Guide for Depth Profiling in Auger Electron Spec-troscopyE 116
7、2 Practice for Reporting Sputter Depth Profile Data inSecondary Ion Mass Spectrometry (SIMS)E 1438 Guide for Measuring Widths of Interfaces in SputterDepth Profiling Using SIMS3. Terminology3.1 DefinitionsFor definitions of terms used in this prac-tice, see Terminology E 673.3.2 Definitions of Terms
8、 Specific to This Standard:3.2.1 Throughout this practice, the regions of the sigmoidalprofile will be referred to as the pre-interface, interface, andpost-interface regions. These terms are not dependent onwhether a particular interface profile is a growth or a decaycurve. The terms pre- and post-
9、are taken in the sense ofincreasing values of the independent variable X, the sputtereddepth.4. Summary of Practice4.1 Sputter depth profile interface data (composition versusdepth) is fitted to an analytic function, an extended form of thelogistic function, in order to describe the shape of suchint
10、erface profiles.3Least-squares fitting techniques are em-ployed to determine the values of the parameters of thisextended logistic function which characterize the shape of theinterface. Interface width, depth, and asymmetry are deter-mined by these parameters.5. Significance and Use5.1 Information o
11、n interface composition is frequently ob-tained by measuring surface composition while the specimenmaterial is gradually removed by ion bombardment (see GuideE 1127 and Practice E 1162). In this way, interfaces arerevealed and characterized by the measurement of compositionversus depth to obtain a s
12、putter-depth profile. The shape ofsuch interface profiles contains information about the physicaland chemical properties of the interface region. In order toaccurately and unambiguously describe this interface regionand to determine its width (see Guide E 1438), it is necessaryto define the shape of
13、 the entire interface profile with a singleanalytic function.1This practice is under the jurisdiction of ASTM Committee E42 on SurfaceAnalysis and is the direct responsibility of Subcommittee E42.08 on Ion BeamSputtering.Current edition approved Nov. 1, 2004. Published December 2004. Originallyappro
14、ved in 1999. Last previous version approved in 1999 as E 163694 (1999).2For referenced ASTM standards, visit the ASTM website, www.astm.org, orcontact ASTM Customer Service at serviceastm.org. For Annual Book of ASTMStandards volume information, refer to the standards Document Summary page onthe AST
15、M website.3Kirchhoff, W. H., Chambers, G. P., and Fine, J., “An Analytical Expression forDescribing Auger Sputter Depth Profile Shapes of Interfaces,” Journal of VacuumScience and Technology, , p. 1666, 1986.1Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 194
16、28-2959, United States.5.2 Although no general physical model currently exists fordescribing the shape of interface sputter-depth profiles, inter-face profiles do have a sigmoidal shape characteristic of thecumulative logistic distribution. Use of such a logistic functionis physically plausible and
17、is superior to other functions (forexample, polynomials) that have heretofore been used forinterface profile analysis in that it contains the minimumnumber of parameters for describing interface shapes.5.3 Many attempts have been made to characterize interfaceprofiles with general functions (such as
18、 polynomials or errorfunctions) but these have suffered from instabilities and aninability to handle poorly structured data. Choice of the logisticfunction along with a specifically written least-squares proce-dure (described in Appendix X1) can provide statisticallyevaluated parameters that describ
19、e the width, asymmetry, anddepth of interface profiles in a reproducible and unambiguousway.6. Description of the Analysis6.1 Logistic Function Data AnalysisIn its simplest form,the logistic function may be written as:Y 511 1 e2x(1)in which Y progresses from 0 to 1 as X varies from to +.The differen
20、tial equation generating this function is:dY/dX 5 Y1 2 Y! (2)and in this form describes a situation where a measurablequantity Y grows in proportion to Y and in proportion to finiteresources required by Y. The logistic function was first namedand applied to population growth in the 20th century byVe
21、rhulst.4The logistic function as a distribution function andgrowth curve has been extensively reviewed by Johnson andKotz.5Interface profile data is fitted to an extended form of thelogistic function:Y 5 A 1 AsX 2 Xo!#/1 1 ez!1 B 1 BsX 2 Xo!#/1 1 e2z! (3)where:z 5 X 2 Xo!/D (4)and:D 5 2 Do/1 1 eQX2X
22、o!# (5)6.1.1 Y is a measure of the elemental surface concentrationof one of the components and X, the independent variable, is ameasure of the sputtered depth, usually expressed as a sputter-ing time. Pre-interface and post-interface elemental surfaceconcentrations are described by the parameters A
23、and B,respectively, the parameters Asand Bsare introduced to accountfor time dependent instrumental effects. Xois the midpoint ofthe interface region (interface depth or time).The scaling factorDois the characteristic depth for sputtering through theinterface region; Q, an asymmetry parameter, is a
24、measure ofthe difference in curvature in the pre- and post-interface ends ofthe interface region.All measures of the interface width can bedetermined from Doand Q.6.2 Fitting of interface profile data to the above functions,Eq 3 , can be accomplished by using least-squares techniques.Because these e
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