DLA SMD-5962-99511 REV C-2006 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED DUAL INVERTING MOSFET DRIVER MONOLITHIC SILICON《微型电路 数字线型 辐射加固双路反向MOSFET驱动器 单块硅》.pdf

《DLA SMD-5962-99511 REV C-2006 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED DUAL INVERTING MOSFET DRIVER MONOLITHIC SILICON《微型电路 数字线型 辐射加固双路反向MOSFET驱动器 单块硅》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-99511 REV C-2006 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED DUAL INVERTING MOSFET DRIVER MONOLITHIC SILICON《微型电路 数字线型 辐射加固双路反向MOSFET驱动器 单块硅》.pdf（19页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to 1.5 and glassivation as specified under APPENDIX A. - ro 99-04-13 Raymond Monnin B Add device type 02. Make changes to 1.2.2, 1.4, table I, figures 1, 2, 3 and APPENDIX A. - ro 99-06-02 Raymond Monnin C Update drawing to current r

2、equirements. Editorial changes throughout. drw 06-08-24 Raymond Monnin REV SHET REV B B B B SHEET 15 16 17 18 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHE

3、CKED BY Rajesh Pithadia COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED DUAL INVERTING MOSFET AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 99-04-01 DRI

4、VER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-99511 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E610-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER

5、 COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar app

6、lications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the ma

7、nufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 99511 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Devic

8、e class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet

9、the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 HS-4423RH Radiation hardened dua

10、l inverting MOSFET drivers with 10 V lockout voltage 02 HS-4423BRH Radiation hardened dual inverting MOSFET drivers with 7.5 V lockout voltage 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device require

11、ments documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as

12、 specified in the device manufacturers approved quality management plan. 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-

13、PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION

14、 LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VS) . 10 V to 20 V Input voltage range (VIN) . -0.3 V to +V 2/ Output short circuit duration (single supply) Continuous 3/ Maximum junction temperature (TJ) 175C Maximum storage temperature . -65C to +150C

15、Maximum lead temperature (soldering 10 seconds) . 265C Thermal resistance, junction-to-case (JC) 18C/W Thermal resistance, junction-to-ambient (JA) . 90C/W 4/ 1.4 Recommended operating conditions. Supply voltage range (VS) . 12 V to 18 V Low voltage lockout voltage: Device type 01. 10.0 V Device typ

16、e 02. 7.5 V Operating temperature range -55C to +125C 1.5 Radiation features. SEP effective let no upsets . See 4.4.4.3 Maximum total dose available: (dose rate = 50 - 300 rad(Si) / s) Device classes M, Q, and V. 300 Krads (Si) Device class T . 100 Krads (Si) Latch up immune 5/ 2. APPLICABLE DOCUMEN

17、TS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENS

18、E SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List o

19、f Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 1

20、9111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _

21、1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Inputs must not go more negative than -0.3V. 3/ Short circuit from the output to VScan cause excessive heating and event

22、ual destruction. 4/ JAis measured with the component mounted on an evaluation PC board in free air. 5/ Guaranteed by process or design.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENT

23、ER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Qual

24、ity Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microc

25、ircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A an

26、d herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Truth table. The truth t

27、able shall be as specified in figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics a

28、nd postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table

29、 I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the devi

30、ce. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification m

31、ark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a Q

32、ML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of c

33、ompliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and her

34、ein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. F

35、or device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain t

36、he option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit g

37、roup number 89 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TA

38、BLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxPower supply current, low ICCSBVS= 18 V, inputs = 0 V 1 01, 02 3.5 mA low 2, 3 4.0 M,D,P,L,R,F 2/ 1 4.0 Power supply current, high ICCSBV

39、S= 18 V, inputs = 18 V 1 01, 02 3.5 mA high 2, 3 4.0 M,D,P,L,R,F 2/ 1 4.0 Input current, low IILVS= 18 V 1 01, 02 2 A 2, 3 4 M,D,P,L,R,F 2/ 1 4 Input current, high IIHVS= 18 V 1 01, 02 2 A 2, 3 4 M,D,P,L,R,F 2/ 1 4 Voltage output VOL, VS= 12 V 1 01, 02 VS 0.75 0.8 V VOH2, 3 VS 0.75 0.8 M,D,P,L,R,F 2

40、/ 1 VS 0.75 0.8 Input voltage VIL, VS= 12 V, 1 01, 02 3.0 0.4 V VIHlimits applied during 2, 3 3.5 0.4 functional test M,D,P,L,R,F 2/ 1 3.5 0.4 Functional test FTVS= 12 V, VS= 18 V 7, 8A, 8B 01, 02 M,D,P,L,R,F 2/ 7 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or network

41、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics continued. Test Symbol Conditions 1/ -55C TC +125C unless

42、 otherwise specified Group A subgroups Device type Limits Unit Min MaxPropagation delay, low tPHLVS= 12 V, 9 01, 02 250 ns CL= 4300 pF 10, 11 350 M,D,P,L,R,F 2/ 9 350 Propagation delay, high tPLHVS= 12 V 9 01, 02 250 ns CL= 4300 pF 10, 11 350 M,D,P,L,R,F 2/ 9 350 Response time, rise TR VS= 12 V, 9 0

43、1, 02 75 ns CL= 4300 pF 10, 11 95 M,D,P,L,R,F 2/ 9 95 Response time, fall TF VS= 12 V, 9 01, 02 75 ns CL= 4300 pF 10, 11 95 M,D,P,L,R,F 2/ 9 95 1/ VS= 12 V to 18 V. 2/ The devices supplied to this drawing meet all levels M, D, P, L, R, F of irradiation (classes M, Q, and V), and all levels M, D, P,

44、L, R for class T. However, this device is only tested at the “F“ level (classes M, Q, and V) and for class T, “R” level (see paragraph 1.5). Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level

45、, TA= +25C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Device types 01 and 02 Case outline X

46、Terminal number Terminal symbol 1 NC 2 INPUT A 3 NC 4 GND 5 GND 6 NC 7 INPUT B 8 NC 9 NC 10 B OUTPUT 11 B OUTPUT 12 VS13 VS14 AOUTPUT 15 AOUTPUT 16 NC FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU

47、IT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Logic diagram. INPUT A AOUTPUT 1 0 0 1 INPUT B B OUTPUT 1 0 0 1 FIGURE 3. Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted w

48、ithout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 NOTES: VS= 15 V and R1 = 5 k. FIGURE 4. Radiation exposure circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99511 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990