DLA SMD-5962-95735 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 8-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体8输入与非晶体管兼容输入硅单片电路线型微.pdf

《DLA SMD-5962-95735 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 8-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体8输入与非晶体管兼容输入硅单片电路线型微.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95735 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 8-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体8输入与非晶体管兼容输入硅单片电路线型微.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、LTR A DESCRIPTION DATE (YR-MO-DA) APPROVED Changes in accordance with NOR 5962-R167-97 97-02-24 Monica L. Poelking B I STANDARD I CHECKEDBY Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh 00-09-1 5 Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLU

2、MBUS, OHIO 43216 OF SHEETS PMIC NIA SHEET 12 3 4 5 6 7 8 9 1011 1213 14 PREPAREDBY Thanh V. Nguyen AMSC NIA MICROCIRCUIT DRAW1 NG THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REVISION LEVEL B Thanh V. Nguyen APPROVED BY Monica L. Poelking DRAWING APP

3、ROVAL DATE MICROCIRCUIT, DIGITAL, RADIATION GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON HARDENED HIGH SPEED CMOS, 8-INPUT NAND 95-09-1 2 5962-95735 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E433-00 Licensed by Information Handling Services1. SC

4、OPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflect

5、ed in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. REVISION LEVEL SHEET B 2 1.2 m. The PIN is as shown in the following example: 95735 Federal RHA Device Device Case Lead stock class designator type class outlin

6、e finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devic

7、es meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpefs). The device type(s) identify the circuit function as follows: Device tvpe Generic number Circuit function o1 HCTS30 Radiation har

8、dened, SOS, high speed CMOS, 8-input NAND gate, lTL compatible inputs 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MI

9、L-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Pac

10、kacie stvle C X CDIP2-Tl4 14 dual-i n-line package CDFP3-F14 14 flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-95735 USLL tUHM 2234 APR 97 Lice

11、nsed by Information Handling Services1.3 Absolute maximum ratinas. I/ 21 31 Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) -0.5 V dc to VCC + 0.5 V dc DC input current, any one input (IIN) . 11 O mA and the abs

12、olute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. Devices supplied to this drawing meet all levels M, D, L, and R of irradiation. However, this device is only tested at the R level. Pre and post irradiation values are identical u

13、nless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25“C. This parameter is guaranteed, if not tested, to the limits specified in table I herein. Power dissipation capacitance (CPD) determines both the power consumption (P,) and cur

14、rent consumption (Is). Where - 2/ - 3/ - 4/ - 5/ PD = (CPD + CL) (Vcc x Vcc)f + (kc x Vcc) + (n x d x Alcc x Vcc) IS = (CPD + CL) Vccf + ICC + (n x d x Alcc) f is the frequency of the input signal; n is the number of device inputs at TL levels; and d is the duty cycle of the input signal. REVISION L

15、EVEL SHEET B 8 - 6/ The test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2 herein. For VOUT measurements, L 5 0.5 V a

16、nd H 2 4.0 V. AC limits at VCC = 5.5 V are equal to the limits at VCC = 4.5 V. For propagation delay tests, all paths must be tested. This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes which affect this characteristic. - 7/ - 8/ STANDA

17、RD MICROCIRCUIT DRAWING IA SIZE I I 5962-95735 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesDevice type Case outlines Terminal number 1 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 2 3 4 5 6 7 8 9 10 11 12 13 14 REVISION LEVEL SHEET B 9 o1 C an X Terminal symbol A B C

18、D E F GAD Y NC NC G H NC vcc FIGURE 1. Terminal connections. I Inputs I output I H = High voltage level L = Low voltage level X = Dont care FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-95735 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesFIGURE 3. Lociic diac

19、iram. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 STANDARD MICROCIRCUIT DRAWING REVISION LEVEL SHEET B 10 IA SIZE I I 5962-95735 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesINPUT 0.0 v DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 ou NOTES: REVISION LEVEL

20、 SHEET B 11 8 OX 1.3 V 2 OX VOL PUT THL POINT 1. CL = 50 pF minimum or equivalent (includes test jig and probe capacitance). 2. RL = 500Q or equivalent. 3. Input signal from pulse generator: VIN = 0.0 V to 3.0 V; PRR 5 10 MHz; tr 5 3.0 ns; tt 5 3.0 ns; tr and tf shall be measured from 0.3 V to 2.7 V

21、 and from 2.7 V to 0.3 V, respectively. FIGURE 4. Switchinq waveforms and test circuit. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-95735 USLL tUHM 2234 APR 97 Licensed by Information Handling Services4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in ac

22、cordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specifie

23、d herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. Parameters L/ ICC a. b. Tests shall be as specified in table IIA herein For device

24、class M, subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). Subgroup

25、4, 5 and 6 (CIN and CPD measurement) shall be measured only for the initial qualification and after process or design changes which may affect capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. For CIN and CPD the tests shall be sufficient to validate

26、 the limits defined in table I herein. c. TABLE IIA. Electrical test requirements. Delta limits +3.0 pA Test requirements (in accordance with (in accordance with MIL-PRF-38535, table Ill) - 1/ PDA applies to subgroup 1 and 7. - 2/ PDA applies to subgroups 1, 7, 9 and deltas. - 3/ Delta limits as spe

27、cified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero hour electrical parameters (see Table i) DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 TABLE IIB. Burn-in and operatinq life test, Delta parameters 1+25“C). REVISION

28、LEVEL SHEET B 12 I -1 5% I IOL/OH I - 1/ These parameters shall be recorded before and after the required burn-in and life test to determine delta limits. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. STANDARD MICROCIRCUIT

29、DRAWING IA SIZE I I 5962-95735 USLL tUHM 2234 APR 97 Licensed by Information Handling Services4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under

30、document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 Of MIL-STD-883. DEFENSE SUPPL

31、Y CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 b. TA = +125“C, minimum. REVISION LEVEL SHEET B 13 c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test tempe

32、rature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the

33、acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters

34、 shall be as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point electrical parameters sh

35、all be as specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1 O1 9 and as specified herein. 4.4.4.1.1 Accelerated aqinq test. Accelerated aging tests shall be performed on all devices requiri

36、ng a RHA level greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end-point electrical parameter limit at +25“C 15“c. Testing shall be performed at initial qualification and after any design or proc

37、ess changes which may affect the RHA response of the device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test method 1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or appro

38、ved test structures at technology qualification and after any design or process changes which may effect the RHA capability of the process. 4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL- STD-883 and herein (see 1.4 herein). a.

39、Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may effect the RHA performance of the devices. Test 1 O devices with O defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall

40、be performed as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-38535. 4.4.4.4 Sinde event phenomena SEP). SEP testing shall be required on class V devices (see 1.4 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or a

41、lternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal

42、to the die surface and 60“ to the normal, inclusive (.e. O“ a b. The fluence shall be t 1 O0 errors or t 1 O6 ions/cm2. c. The flux shall be between 10 and 1 O5 ions/cm2/s. The cross-section shall be verified to be flux independent by angle a 60“). No shadowing of the ion beam due to fixturing or pa

43、ckage related effects is allowed. measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be t 20 microns in silicon. e. The test temperature shall be +25“C and the maximum rated operating temperature 11 0C. STANDARD MICROCIRCUIT DRAW

44、ING IA SIZE I I 5962-95735 USLL tUHM 2234 APR 97 Licensed by Information Handling Servicesf. Bias conditions shall be defined by the manufacturer for latchup measurements. g. Test four devices with zero failures. 4.5 Methods of inspection. Methods of inspection shall be as specified as follows: 4.5.

45、1 Voltaqe and current. Unless otherwise specified, all voltages given are referenced to the microcircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. Open 8, 9, 10, 13 Table 111. Irradiation test connections. L/ Ground 7 Vcc=5 V f 0.5

46、V 1,2,3, 4, 5, 6, 11, 12, 14 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 - 11 Each pin except Vcc and GND will have a series resistor of 47KQ &%, for irradiation testing. REVISION LEVEL SHEET B 14 5. PACKAGING 5.1 Packaqinq requirements. The requirements for packaging shall be in accor

47、dance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.

48、1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Confiauration control of SMDs. All proposed changes to exi

49、sting SMDs will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application requires configuration control and which SMDs are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5