DLA SMD-5962-95726 REV C-2009 MICROCIRCUIT DIGITAL HIGH SPEED CMOS RADIATION HARDENED QUAD 2-INPUT NAND SCHMITT TRIGGER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R132-98 98-07-14 Raymond L. Monnin B Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh 00-09-01 Monica L. Poelking C Correct the radiation features in section 1.5 a

2、nd paragraph 4.4.4.1. Update boilerplate paragraphs to current requirements of MIL-PRF-38535.- MAA 09-05-20 Thomas M. Hess REV SHET REV C C C C C C C C SHEET 15 16 17 18 19 20 21 22 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thanh

3、 V. Nguyen STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-1

4、2-19 MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, RADIATION HARDENED, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95726 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E284-09 Provided by IHSNot for ResaleNo reproduction or networking permitted wit

5、hout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95726 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class

6、es Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the

7、following example: 5962 R 95726 01 V X C _ Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet th

8、e MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The devi

9、ce type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HCS132 Radiation hardened, SOS, high speed CMOS, quad 2-input NAND Schmitt trigger 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level

10、 as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The c

11、ase outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line package X CDFP3-F14 14 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-385

12、35, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95726 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute ma

13、ximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperatur

14、e range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline C . 24C/W Case outline X 30C/W Thermal resistance, junction-to-ambient (JA): Case outline C . 74C/W Case outline X 116C/W Junction temperature (TJ) +175C Maximum pac

15、kage power dissipation at TA= +125C (PD): 4/ Case outline C . 0.68 W Case outline X 0.43 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input volt

16、age (VIL) 30% of VCC Minimum high level input voltage (VIH). 70% of VCCCase operating temperature range (TC). -55C to +125C Maximum input rise and fall time (tr, tf) at VCC = 4.5 V Unlimited 1.5 Radiation features. Total dose available (Dose rate = 50 300 rads(Si)/s) . 2 x 105Rads (Si) Single event

17、phenomenon (SEP) effective linear energy threshold (LET) no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010Rads (Si)/s 5/ Dose rate induced latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ _ 1/ Stresses above the absolute maximum rating may cause pe

18、rmanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperatur

19、e range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case C 13.5 mW/C Case X 8.6 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHS

20、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95726 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards,

21、and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated C

22、ircuits Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-78

23、0 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) for

24、m a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induc

25、ed by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of th

26、is drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device class

27、es Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M s

28、hall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physica

29、l dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as spec

30、ified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveform and test circuit. The switching waveforms and test circuits shall be as specified on figure 4. Provided by IHSNo

31、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95726 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Radiation exposure circuit. The radiation exposure circuit sh

32、all be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance

33、 characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup ar

34、e defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “

35、5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The

36、certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required

37、 from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certifi

38、cate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A a

39、nd herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M

40、. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retai

41、n the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircui

42、t group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95726 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97

43、 TABLE I. Electrical performance characteristics. Limits 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Min Max Unit For all inputs affecting output under test VIH= 3.15 V or VIH= 1.35 V For all other inputs VIN= VCCor GND IOH= -50 A All 1

44、, 2, 3 4.40 M, D, L, R 3/ All 4.5 V 1 4.40 For all inputs affecting output under test VIH= 3.85 V or VIL= 1.65 V For all other inputs VIN= VCCor GND IOH= -50 A All 1, 2, 3 5.40 High level output voltage VOHM, D, L, R 3/ All 5.5 V 1 5.40 V For all inputs affecting output under test VIH= 3.15 V or VIH

45、= 1.35 V For all other inputs VIN= VCCor GND IOL= +50 A All 1, 2, 3 0.1 M, D, L, R 3/ All 4.5 V 1 0.1 For all inputs affecting output under test VIH= 3.85 V or VIL= 1.65 V For all other inputs VIN= VCCor GND IOL= +50 A All 1, 2, 3 0.1 Low level output voltage VOLM, D, L, R 3/ All 5.5 V 1 0.1 V All 1

46、, 2, 3 2.0 3.15 Positive-going threshold VT+M, D, L, R 3/ All 4.5 V 1 1.7 3.15 V All 1, 2, 3 1.35 2.60 Negative-going threshold VT-M, D, L, R 3/ All 4.5 V 1 0.9 2.10 V All 1, 2, 3 0.10 1.40 Hysteresis (VT+- VT-) VHM, D, L, R 3/ All 4.5 V 1 0.10 1.40 V See footnotes at end of table. Provided by IHSNo

47、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95726 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits

48、 2/ Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Min Max Unit For input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND 1 +0.5 All 2, 3 +5.0 Input current high IIHM, D, L, R 3/ All 5.5 V 1 +5.0 A For input under test, VIN= GND For all other inputs VIN= VCCor GND 1 -0.5 All 2, 3 -5.0 Input current low IILM, D, L, R 3/ All 5.5 V 1 -5.0 A For all inputs affecting output under test, VIN= 4.5 V or 0.0 V For all ot