DLA SMD-5962-95716-1995 MICROCIRCUIT DIGITAL CMOS OCTAL LATCHING BUS DRIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体八角闭塞装置母线驱动器硅单片电路线型微电路》.pdf
《DLA SMD-5962-95716-1995 MICROCIRCUIT DIGITAL CMOS OCTAL LATCHING BUS DRIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体八角闭塞装置母线驱动器硅单片电路线型微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-95716-1995 MICROCIRCUIT DIGITAL CMOS OCTAL LATCHING BUS DRIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体八角闭塞装置母线驱动器硅单片电路线型微电路》.pdf(14页珍藏版)》请在麦多课文档分享上搜索。
1、JUL 94 DISTRIBUTION STATEMENT A Approved for public release, distribution IS unlimited 5962-E238-96 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-5962-457Lb D 9999996 0084536 473 D SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPL
2、Y CENTER DAYTON, OHIO 45444 1. SCOPE .- 1.1 m. product assurance classes consisting of military high reliability (device classes Q and M) and space application (device class VI, and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Nunber (PIN). 1
3、.2.1 of MIL-STD-883, lnProvisions for the use of MIL-STD-883 in conjunction with cqliant non-JAN devices“. available, a choice of Radiation Hardness Assurance (RHA) levels are refiected in the PIN. This drawing forms a part of a one part -*one part nunber docunentation system (see 6.6 herein). Two D
4、evice class M microcircuits represent non-JAN class B microcircuits in accordance with When 1.2 m. lhe PIN shall be as shown in the following example: TzlI-=LLLf Federal RHA Devi ce Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1
5、.2.4) (see 1.2.5) LU (see 1.2.3) / Drawing nunber 1.2.1 MA desianatec . Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be marked with the appropriate RHA designator. MIL-1-38535 specified RHA levels and shall be marked with the appropriate RHA
6、designator. non-RHA device. Device classes Q and V RHA marked devices shall meet the A dash (-) indicates a 1.2.2 pevice tm e(s1. The device type(s) shall identify the circuit function as follows: Device tvD e Generic nunber Circuit funct i on 5962-9571 6 REVISION LEVEL SHEET 2 o1 82C82/7 Latchup re
7、sistant CMOS octal latching bus driver 1.2.3 Device class desi- . The device class designator shall be a single letter identifying the product assurance level as follows: pevice class pevice reauirements docwntation I M Vendor self-certification to the requirements for non-JAN class E microcircuits
8、in accordance with 1.2.1 of MIL-STD-883 P or V Certification and qualification to MIL-1-38535 1.2.4 Case outline(s) . The case outtinets) shall be as designated in MIL-STD-1835 and as follows: DescriDtive desianatoc Jerminals .Eahur/ ins 1-8,9,11 Logical 88188 input voltage Logi ca i lOB1 input 1 VI
9、L voltage cc = 4.5 v 3J ins 1-8,9,11 I 2.9 1 IV cc = 4.5 V, = GND OH = -8.0 mA, Pins 12-19 Al l - Al 1 - Al 1 Al l CC = 4.5 Vf GND roup D end-point electrical parameters (see 4.4) 1 1 I 1,7,9 1,7,9 117,9 Standby power supply current Output Leakage current Input Leakage current I I 1 I I ICCSB +/- 2.
10、0 pA IOZL, IOZH +/- 2.0 pA IIH,IIL +/- 200 nA Group A test 1 1,2,3,4,7,8,9 ,2,3,4,7, requirements (see 4.4) 10,ll 8,9,10,11 I I 1 I 1,2,3,7,8,9 10,ll 10,ll z/ I 1237889 I :roup C end-point electrical parameters (see 4.4) ;roup E end-point electrical parameters (see 4.4) U PDA applies to subgroup 1 a
11、nd 7. u PDA applies to subgroups 1,7 and deltas. 1/ Delta limits as specified in Table IIB herein shall be required where specified and the delta values shall be completed with reference to the zero hour electrical parameters (See Table I). Table IIB. Delta Limits I Parameter I Symbol Delta limits 4
12、.4.2.1 Add itional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883. a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under docunent revision level control and shall be made available to the preparing or acquiring act
13、ivity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005. b. TA +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. I SIZE I I 5962-9
14、571 6 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-95Lb 9999996 008452b 310 Q . The steady-state life test durat
15、ion, test condition and test temperature, or approved alternatives shall be as specified in the device manufa-curers PM plan in accordance with MIL-1-38535. manufacturers TRB, in accordance with MIL-1-38535, and shall be made available to the acquiring or preparing activity upon request. accordance
16、with the intent specified in test method 1005. 4.4.2.2 The test circuit shall be maintained under docunent revision level control by the device The test circuit shall specify the irputs, outputs, biases, ad power dissipation, as applicable, in 4.4.3 woun D -tia . The group D inspection end-point ele
17、ctrical parameters shall be as specified in table IIA herein. , 4.4.4 Doua E wctipn . . Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). device class M shall be M and D. RHA levels for device classes P and V shall be M, D, L, R, c, G
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