DLA SMD-5962-90899 REV D-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT FLASH EEPROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体128K X 8比特动画电可擦可编程序只读存储器 数字主储存器微型电路》.pdf

《DLA SMD-5962-90899 REV D-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT FLASH EEPROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体128K X 8比特动画电可擦可编程序只读存储器 数字主储存器微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90899 REV D-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8-BIT FLASH EEPROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体128K X 8比特动画电可擦可编程序只读存储器 数字主储存器微型电路》.pdf（27页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Updated boilerplate. Added device types 09 - 13. Moved endurance and data retention testing requirements from Section 4 of drawing to Section 3 of drawing. Editorial changes throughout. 94-03-25 M. A. Frye B Updated boilerplate. Added vendor CAGE

2、 01295 as a source of supply. Editorial changes throughout. - glg 98-04-16 Raymond Monnin C Changed standoff width on “U“ package. Added vendor CAGE 0EU86 as a source of supply. - glg 99-11-16 Raymond Monnin D Boilerplate update and part of five year review. tcr 06-12-21 Raymond Monnin REV SHEET REV

3、 D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin COLUMBUS, OHIO 43218-3990 http:/w

4、ww.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K X 8-BIT FLASH EEPROM, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-08-31 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268

5、 5962-90899 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E080-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90899 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2

6、234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN)

7、. When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90899 01 Q X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2

8、.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RH

9、A levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time Endurance 01 28F010 (128 K x 8) CMOS flash EEPROM 250 ns 10,0

10、00 cycles 02 28F010 (128 K x 8) CMOS flash EEPROM 200 ns 10,000 cycles 03 28F010 (128 K x 8) CMOS flash EEPROM 150 ns 10,000 cycles 04 28F010 (128 K x 8) CMOS flash EEPROM 120 ns 10,000 cycles 05 28F010 (128 K x 8) CMOS flash EEPROM 250 ns 1,000 cycles 06 28F010 (128 K x 8) CMOS flash EEPROM 200 ns

11、1,000 cycles 07 28F010 (128 K x 8) CMOS flash EEPROM 150 ns 1,000 cycles 08 28F010 (128 K x 8) CMOS flash EEPROM 120 ns 1,000 cycles 09 28F010 (128 K x 8) CMOS flash EEPROM 90 ns 10,000 cycles 10 28F010A (128 K x 8) CMOS flash EEPROM 250 ns 100,000 cycles 11 28F010A (128 K x 8) CMOS flash EEPROM 200

12、 ns 100,000 cycles 12 28F010A (128 K x 8) CMOS flash EEPROM 150 ns 100,000 cycles 13 28F010A (128 K x 8) CMOS flash EEPROM 120 ns 100,000 cycles 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requi

13、rements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MI

14、L-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style T See figure 1 32 “J“ lead chip carrier U See figure 1 32 Flat pack X GDIP1-T32 or CDIP2-T32 32 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z See figure 1 32 Gullwing lead chip carrier Provided

15、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90899 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-

16、PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Endurance: Device types 01-04, 0910,000 cycles/byte, minimum Device types 05-081,000 cycles/byte, minimum Device types 10-13100,000 cycles/byte, minimum Supply voltage range (VCC) 2

17、/ -2.0 V dc to +7.0 V dc Storage temperature range (Tstg) -65C to +150C Maximum power dissipation (PD) 1.0 W Lead temperature (soldering, 10 seconds)+300C Junction temperature (TJ) 3/ +150C Thermal resistance, junction-to-case (JC) (case outline X, Y) .See MIL-STD-1835 Thermal resistance, junction-t

18、o-case (JC) (case outlines T, Z)13C/W Thermal resistance, junction-to-case (JC) (case outline U) .27C/W Voltage on any pin with respect to ground 2/ .-2.0 V dc to +7.0 V dc Voltage on pin A9with respect to ground 4/ .-2.0 V dc to +13.5 V dc VPPsupply voltage with respect to ground 4/ .-2.0 V dc to +

19、14.0 V dc VCCsupply voltage with respect to ground 2/ .-2.0 V dc to +7.0 V dc Output short circuit current 5/.200 mA Data retention .10 years minimum 1.4 Recommended operating conditions. Supply voltage range (VCC) .+4.5 V dc to +5.5 V dc Operating temperature range (Tcase) .-55C to +125C Low level

20、input voltage range (VIL)-0.5 V dc to +0.8 V dc High level input voltage range (VIH).+2.0 V dc to VCC+0.5 V dc High level input voltage range, CMOS (VIH)VCC-0.5 V dc to VCC+0.5 V dc Chip clear (VP) 11.4 V dc to 12.6 V dc 1.5 Digital logic testing for device classes Q and V. Fault coverage measuremen

21、t of manufacturing logic tests (MIL-STD-883, method 5012) 100 percent 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Minimum dc voltage on input or VOpins is -0.5 V. D

22、uring voltage transitions, inputs may overshoot VSSto -2.0 V for periods of up to 20 ns. Maximum dc voltage on output and VOpins is VCC+0.5 V. During voltage transitions outputs may overshoot to VCC+2.0 V for periods up to 20 ns. 3/ Maximum junction temperature shall not be exceeded except for allow

23、able short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 4/ Minimum dc input voltage on A9or VPPmay overshoot to +14.0 V for periods less than 20 ns. 5/ No more than one output shorted at a time. Duration of short circuit should not be greater than 1 second. 6/

24、 All voltages are referenced to VSS(ground). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90899 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. AP

25、PLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPA

26、RTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-H

27、DBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Ph

28、iladelphia, PA 19111-5094.) 2.2 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. ELECTRONICS INDUSTRIES ALLIANCE (EIA) J

29、EDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measu

30、rement of Single Event Phenomena Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) (Non-Government standards a

31、nd other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the r

32、eferences cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

33、ICROCIRCUIT DRAWING SIZE A 5962-90899 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified

34、herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class

35、 level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s

36、). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed d

37、evices for contracts involving no altered item drawing shall be as specified on figure 3 herein. When required, in screening (see 4.2 herein), or quality conformance inspection groups A, B, C, or D (see 4.4 herein), the devices shall be programmed by the manufacturer prior to test in a checkerboard

38、or similar pattern (a minimum of 50 percent of the total number of bits programmed). 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not part of this document. 3.2.3.3 Command definitions. The command definitions table shall be as specified on figure 3. 3.2.4 Switch

39、ing test circuits and waveforms. The switching test circuits and waveforms shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter l

40、imits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part sha

41、ll be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. Marking for device classe

42、s Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for

43、device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device

44、class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that

45、the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38

46、535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawi

47、ng is required for any change that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90899 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +125C 1/ 4.5 V VCC 5.5 V unless otherwise specified Group A Subgroups Device type Min Max Units DC CHARACTERISTICS Input leakage current ILIVCC= VCCmax, VIN= VCCmax or VSS1, 2, 3 All 1.0 A Output lea