DLA SMD-5962-85133-1986 MICROCIRCUITS DIGITAL HMOS 80-BIT NUMERIC PROCESSOR EXTENSION MONOLITHIC SILICON《硅单块 80比特扩展数字处理器 高性能金属氧化物半导体 数字微型电路》.pdf
《DLA SMD-5962-85133-1986 MICROCIRCUITS DIGITAL HMOS 80-BIT NUMERIC PROCESSOR EXTENSION MONOLITHIC SILICON《硅单块 80比特扩展数字处理器 高性能金属氧化物半导体 数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-85133-1986 MICROCIRCUITS DIGITAL HMOS 80-BIT NUMERIC PROCESSOR EXTENSION MONOLITHIC SILICON《硅单块 80比特扩展数字处理器 高性能金属氧化物半导体 数字微型电路》.pdf(17页珍藏版)》请在麦多课文档分享上搜索。
1、c -3 DESC-DWG-85133 59 W 7777775 000qb04 2 -B 1 Defense Electronics Supply Center Dayton, Ohio Original date of drawing: 27 October 1986 REVISIONS DESCRIPTION ilable for use by AMCC NIA SIZE 5962-851 33 CODE IDENT. NO. DWG NO. A 14933 REV PAGE I OF 17 1 5962-E943-01 DISTRIBUTION STATEMENT A. Approve
2、d for public release; distribution is unlimited. DESC FORM 193 9 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1, SCOPE MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 1.1 Scope. This drawing describes device requirements for class
3、B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN levices“. 1.2 Part number, The complete part number shall be as shown in the following example: A 14933 5962-85133 REV PAGE 2 + 1 + + I 1 “J I I I I I I 1 1 Drawing n
4、umber Device type Case outline Lead finish per (1.2.11 (1.2.2) MI L-M-385 10 1.2.1 Device types. The device types shall identify the circuit function as follows: Device type Generic number Circuit function Frequency o1 80287-10 I#)-bit HMOs numeric 10 MHz processor extension O2 03 80287-a %bit HMuS
5、numeric a MH processor extension 80287-6 -bit HMS numeric 6 MHz processor extension 1.2.2 Case outline. The case outline shall be as designated in appendix C of MIL-M-38510, and as fol 1 ows : Out1 ine 1 etter u Case outline D-5 (U-lead, 9/16“ x 2 1/16“), dual-in-line package 1.3 Absolute maximum ra
6、tings. Storage temperature range - - - - - - - - - - - - - - Maximum power dissipation (Po)- - - - - - - - - - - - Lead temperature (soldering, 10 seconds)- - - - - - - Thermal resistance, junction-to-case (Jc)- - - - - - Junction temperature (TJ) - - - - - - - - - - - - - - -65C ta +15OC 3.1a W 300
7、 C See MIL-M-38510, appendix C 150C Voltage on any pin with respect to ground - - - - - - -1.0 V dC to +7 V dc 1.4 Recommended operating conditions. Case operating temperature range- - - - - - - - - - - Supply voltage (Vcc)- - - - - - - - - - - - - - - - - -55C to +125“C 4.75 V dc to 5.25 V dc I SIZ
8、E I CODE IDENT. NO. I DWG NO. I )ESC FORM 193A FEB 86 I 4- Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-i + SIZE CODE IDENT. NO. MILITARY DRAWING A 14933 i DESC-DWG-85133 57 m 7777775 0004bOh h m DWG NO. 5962-85133 2. APPLICABLE DOCUMENTS 2.1 Gove
9、rnment specification and standard. Unless otherwise specified, the following specification nd standard, of the issue listed in that issue of the Department of Defense Index of Specifications nd Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECI
10、FICATION MILITARY MIL-M-38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. (Copies of the specification and standard required by manufacturers in connection with Specific cquisition functions should be obtained from the
11、 contracting activity or as directed by the ontracting activity.) eferences cited herein, the text of this drawing shall take precedence. 2.2 Order of precedence. 3. REQUIREMENTS 3.1 In the event of a conflict between the text of this drawing and the Item requirements. The individual item requiremen
12、ts shall be in accordance with 1.2.1 of IIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and s specified herein. imensij an erein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical 3.2.1 Terminal connections. 3
13、.2.2 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.3 Case outline. The case outline shall be in accordance with 1.2.2 herein. 3.3 Electrical performance characteristics. Unless otherwise specified, the electrical performance The terminal Connections shall be as specified on
14、 figure 1. haracteristics are as specified in table I and apply over the full recommended case operating emperature range. larked with the part number listed in 1.2 herein. In addition, the manufacturers part number may also e marked as listed in 6.5 herein. 3.5 Certificate of compliance. A certific
15、ate of compliance shall be required from a manufacturer in irder to be listed as an approved source of supply in 6.5. The certificate of compliance submitted to ESC-ECS prior to listing as an approved source of supply shall state that the manufacturers product ieets the requirements of MIL-STD-883 (
16、see 3.1 herein) and the requirements herein. ierein) shall be provided with each lot of microcircuits delivered to this drawing. 3.4 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall be 3.6 Certificate of conformance. A certificate of conformance as required i
17、n MIL-STD-883 (see 3.1 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 3.7 Notification of change. Notification of change to OESC-ECS shall be required in accordance with IIL-STO-883 (see 3.1 herein). REV PAGE 3 I c- Provided by IHSNot for ResaleNo reproduction or networking permitted without license
18、 from IHS-,-,-I TABLE I o Electrical performance characteristics. Test ISymbol I Condi tions IGroup A IDevice I Limits I Unit I I 1 I I I TC -55C to +125C Isubgroupsl type I I VCC = 5.0 V *5% I I I Min I Max I I I l I I II I I I I I I I I II I I I Input high voltage IVIH i 1, 2, 3 I All 1 2.OiVcc V
19、I I I 1 1 1 +.5 I I I I I I 1, 2, 3 1 All 1 I IV I I II I I 2*01Vcc+1 I 1 3.81Vcc*l I il I 1 I 1 I 1 I I i II I I Input low voltage !VIL I I 1, 2, 3 I All I -.51 -8 I V Clock input low IhLC I vol tage : I CKM = 1 I l 1 CKM = O I I 1 I I I 1 I Output low voltage IVOL IIOL I 0.3 mR I 1, 2, 3 1 All I I
20、 ,451 V Output high voltage IvoH Input leakage current 111 IO V 5 VIN 5 Vcc I 1, 2, 3 i All 1 It10 1 PA Output leakage current1 ILO 1.45 V A VOUT 5 Vcc i 1, 2, 3 f All /i10 UA 1 I I I l I II I I I I I I I II I 1 1 1 I II 1 I 1, 2, 3 I All I 2.41 IV PH = -400 IlA I I 11 i Power supply current 1cc ITC
21、 = -55C I 3 I All I 1600 i #4 . I I ISee 4.3,lc I 1 II I capacitance (00-015) 1 ISee 4.3.1 I I Il I ISee 4.3.1 I I li 4 Input capacitance ICIN IFC = 1 MHz 1 4 IA111 fi0 i pF . Input/output IC0 IFC = 1 FIHz 1 4 1 All I 1 2 I pi- CLK capacitance CCLK IFC = 1 MHz 1 4 f All 1 i 12 1 pF I I I I I I I 11
22、1 ns : i9* lus li I o1 Il00 Is00 I I CLK period ICLCL 1 - i/ CKM i: 1 I 1 O2 1125 1500 1 1 03 1166 1500 I 1 O1 I 40 1166 I 1 I CKM = O I 1 I I 02 I 50 1166 i I 03 1 62.51166 I I I 1 l I I I 1 1 I 1 O1 1 53 1343 1 1 I 02 1 68 1343 I I 1 03 I100 1343 1 I I O1 I 11 1146 I I 1 at Oa6 I 102, 03 I 15 1146
23、 I I I at o*8 t 1/ 19, 10, ill II I nc CLK low time ftCLCH I - CKM 1 I I CKM = O I I See footnates at end of table, SIZE MI LllARY DRAW1 NG A CODE IDENT. NO. DWG NO. 14933 5962-85133 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO REV PAGE 4 Provided by IHSNot for ResaleNo reproduction or networking
24、permitted without license from IHS-,-,- DESC-DWG-B5133 57 m 7777775 000LibB T M SIZE CODE IDENT. NO. MILITARY DRAWING A 14933 TABLE I. Electrical performance characteristics - Continued. Test ISymbol I Conditions IGroup A IOevice I Limits I Unit I I I I I I TC = -55C to +125“C Icubgroupsl type IV VC
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