DLA MIL-S-19500 341B-1968 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON HIGH-FREQUENCY POWER TYPES 2N3375 2N3553 AND 2N4440 JAN JANTX AND JANTXV.pdf

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1、 MIL -S -.19 5 00/3 4 1 B 29 March 1968 SUPERSEDING MIL-S -19500/341A 2 November 1966 (See 6.3.) MILITARY SPECIFICATION Type 2N3375, 2N4440 2N3553 SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY, POWER TYPES 2N3375, TX2N3375, 2N3553, TX2N3553, 2N4440 AND TX2N4440 PT PT TA = 25C TC = 2

2、5C W - ! 2.6 L/ 11.6 31 1. o 2/ 7. O s/ This specification is mandatory for use by ail Depart- ments and Agencies of the Department of Defense. Vdc * 1. SCOPE “C - “C - Vdc Vdc - 1.1 Scope. This specification covers the detail requirements for NPN, silicon, high-frequency, power-amplifier transistor

3、s. The prefix “TX“ is used on devices submitted to and passing the special process-conditioning, testing, and screening as specified in 4.5 through 4.5.8.1. VCE(Sat) L/ Cob0 I hfe I FE IC = 500 mAdc IC = 250 mAdc IE = 0 VCE = 28 Vdc VCE = 5 Vdc L/ Limits IR =100mAdc IB = 50mAdc VCB = 30Vdc IC = 125m

4、Adc IC = 150 mAdc 100kHz 25“ C. - 2/ Derate linearly 5.71 mW/“C for TA 25“ C. - 3/ Derate linearly O. 066 W/“C for TC 25“ C. c 4/ Derate linearly O. 04 W/“C for TC 25“ C. L/ Pulsed test (see 4.4.1). z/ See 0.4 for typical power output vs. frequency. c.- PSC 5961 Provided by IHSNot for ResaleNo repro

5、duction or networking permitted without license from IHS-,-,-MIL -S-19500/34 1B 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein. SPECIFICATION MILITARY

6、MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of specifications, standards, drawings, and publications required by suppliers in

7、 connec- tion with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. ) 2.2 Other publications. The following documents form a part of this specification to the extent specified herein. Unless otherwise indicated, the issue in eff

8、ect on date of invitation for bids or request for proposal shall apply. NATIONAL BUREAU OF STANDARDS Handbook H28 - Screw-Thread Standards for Federal Services. (Application for copies should be addressed to the Superintendent of Documents, Government Printing Office, Washington, D. C. 20402. ) 3. R

9、EQUIREMENTS 3.1 General. Requirements shall be in accordance with MIL-S-19500, and as specified herein. * 3.2 Abbreviations, symbols, definitions, and equations. The abbreviations, symbols, definitions, and equations used herein are as defined in MIL-S-19500, and as follows: 3.3 Design, construction

10、 and physical dimensions. Transistors shall be of the design, construc- tion, and physical dimensions shown on figures 1 and 2. * 3.3.1 Lead material and finish. Lead material, for type 2N3553 only, shall be Kovar or alloy 52 and final finish shall be gold-plated. (Leads may be tin-coated if specifi

11、ed in the contract or order, and this requirement shall not be construed as adversely affecting the qualified-product status of the device, or applicable JAN marking (see 6.2). * 3.3.1.1 Lead material. if lead material need be specified, it shall be specified in the contract or order (see 6.2). 3.4

12、Performance characteristics. Performance characteristics shall be as specified in tables I, II, andIII, and as follows: * 3.4.1 Process-conditioning, testing, and screening for “TX“ type. Process-conditioning, testing, and screening for the “TX“ type shall be as specified in 4.5. Provided by IHSNot

13、for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-S-19500/3LI1B 57 777770b 0020382 2 TEM PERATU R E 10-32 UNF2A REFERENCE NOTES: 1. hleiric equivalents (to the nearest .O1 mm) are given for general information only and are based upon 1 inch = 25.4 mn. 2. The pin spac

14、ing permits insertion in any socket having a pin-circle diameter of ,200 (50.8 m) and contacts which will accommodate pins having a diameter of .O35 (.89 mm) minimum, ,045 (1.14 mm) maximum. 3. The torque applied to a 10-32 hex nut assembled on the thread during installation should not exceed 12 inc

15、h-pounds. 4. All terminals electrically isolated from case. 5. All three terminals. FIGURE 1. Physical dimensions of transistor types 2N3375, TX2N3375, 2N4440 and TX2N4440. 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- MIL-S-L9500/3LB 59 W 77797

16、06 0020383 4 W I=- SEATING PLANE .O07 (.18MMIJ RAD MAX 1. 2. 3. 4. 5. 6. 7. 8. 9. NOTES: hi:tric equivalents (to the nearest .O1 nun) are given for general information only and are based upon 1 inch = 25.4 mm. Measured in the zone beyond .250 (6.35 mm) from the seating plane. Measuredin the zone .O5

17、0 (1.27 mm) and .250 (6.35 mm) from the seating plane. Variations on dimension B in this zone shall not exceed .O10 (25 mm). Outline in this zone is not controlled. When measured in a gaging plane .054+.001, -.OM) (1.37t.03,-.O0 mm) below the seating plane of the transistor maximum diameter leads sh

18、all be within .O07 (-18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fali within the outline of the maximum diameter lead tolerance. Figure 3 shows the preferred measured method. The collector shall be internally connected to the case. Measured from the ma

19、ximum diameter of the actual device. All 3 leads. (see 3.3.1 and 3.3.2). FIGURE 2. Physical dimensions of transistor types 2N3553 and TX2N3553 (TO-39). 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-A- -0- GAGE OUTLINE H OPTIONAL 4 0 d, 4 -e SEATI

20、NG SURFACE D -E- C- + kK DIA. NOTES: 1. The following gaging procedure shall be used: The use of a pin straightener prior to insertion in the gage is permissible. The device being measured shall be inserted until its seating plane is .125?.010 (3.18t.25 mm) from the seat- ing surface of the gage. A

21、spacer may be used to obtain the .125 (9.18 mm) distance from the gage seat prior to force application. A force of 8 oz 5.5 oz shall then be applied parallel and symmetrical to the devices cylindrical axis. When examined visually after the force appli- cation (the force need not be removed) the seat

22、- ing plane of the device shall be seated against the gage. 2. The location of the tab locator, within the limits of dimension C, will be determined by the tab and flange dimension of the device being checked. 3. Metric equivalents (to the nearest .O1 mm) are eiven for general information only and a

23、re based ;pon 1 inih = 25.4 mm. PICURE 3. Gage for lead and tab location for transistor types 2N8553 and TX2N8.553. 5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-S-L7500/3LB 57 777770b 0020385 8 W MIL -S -19500/34 1B 3.5 Marking. The followin

24、g marking specified in MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of origin. (b) Manufacturers identification. * 3.5.1 “TX“ marking. Devices in accordance with the “TX“ requirements shall include the addi- tional marking “TX“ preceding t

25、he type designation. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables I, II, an

26、d III. * 4.2.1 Qualification testing. The non-= type shall be used for qualification testing. Upon re- quest to the qualifying activity, qualification will be extended to include the “TX“ type of the device. * 4.3 Quality conformance inspection. Quality conformance inspection shall consist of groups

27、 A, B, and C inspections. When specified in the contract or order, one copy of the quality conformance inspection data, pertinent to the device inspection lot, shall be supplied with each shipment by the device manufacturer. 4.3.1 Group A inspection. Group A inspection shall consist of the examinati

28、ons and tests speci- fied in table I. 4.3.2 Group B inspection. fied in table II. Group B inspection shall consist of the examinations and tests speci- 4.3.3 Group C inspection. Group C inspection shall consist of the examinations and tests speci- fied in table III. This inspection shall be conducte

29、d on the initial lot and thereafter every 6 months during production. * 4.3.4 Group B and group C life-test samples. Samples that have been subjected to group B, 340-hour life-test, may be continued on test for 1,000-hours in order to satisfy group C life-test requirements. These samples shall be pr

30、edesignated, and shall remain subjected to the group C, 1,000-hour acceptance evaluation after they have passed the group B, 340-hour acceptance criteria. The cumulative total of failures iound during 340-hour test and during the subsequent interval up to 1,000 hours, shall be computed for 1,000-hou

31、r acceptance criteria. * 4.3.5 Group C testing. The contractor shall, throughout the course of a contract or order, per- mit the Government representative to scrutinize all test data and findings covering manufacturers test program on group C characteristics and parameters for the product concerned.

32、 Upon determi- nation by the Government inspector (in advance of group C, 6-month, test results) that group C pa- rameters are not being adequately met, the Government inspector may require lot-by-lot inspection, normally for a minimum of 3 consecutive lots, to be performed for required group C test

33、s. 4.4 Methods of examination and test. Methods of examination and test shall be as specified in tables I, II, and III, and as follows: * 4.4.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. * 4.4.2 Time limit for end-point test measurements.

34、End-point tests for qualification and quality conformance inspection shall be completed within 96 hours after completion of the last test in the subgroup. 4.4.3 Terminal strength (stud torque). Acceptance criteria after the stud torque test shall be 10-32 UNF-BA for external threaded parts in accord

35、ance with Handbook H28. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-S-17500/34LB 57 7797706 00203Bb T m MIL-S-l9500/341B * 4.4.4 Power output and collector efficiency measurement. The device shall be tested in the circuit of figure 5, 6, or 7

36、, as appropriate. The specified conditions shall be applied and the vari- able capacitors adjusted to obtain maximum power output. When the maximum power output is obtained, the collector current shall be measured and recorded and the collector efficiency shall be computed as follows: x 100 Po (watt

37、s) r7 in % = 28 x IC (amperes) * 4.4.5 Burnout by pulsing. The devices shall be tested in the circuit of figure 8. The voltage source shall be increased from zero until the specified current is reached. The current shall be maintained for the specified time. TABLE I. Group A inspection - Examination

38、 or test Subgroup 1 Visual and mechanical examination * Subgroup 2 Breakdown voltage, collector to base Breakdown voltage, collector to emitter (undamped inductive) to emitter (undamped inductive) Breakdown voltage, collector Collector to emitter cutoff current Breakdown voltage, emitter to base Col

39、lector to emitter voltage (saturated) 2N3375, 2N4440 2N3553 Forward-current transfer ratio Kethod 2071 3001 - - 3041 3026 3071 3076 MIL- STD-7 50 Bias cond. D; IC = 100 pAdc IC = O to 200 mAdc (see fig. 4) VBE = -1.5 Vdc; IC = O to 200 mAdc (see fig. 4) Bias cond. D; VCE = 30 Vdc Bias cond. D; IE =

40、100 pAdc IC = 500 mAdc; IB = 100 mAdc; pulsed (see 4.4.1) IC = 250 mAdc; IB = 50 mAdc; pulsed (see 4.4.1) VCE = 5 Vdc; IC = 150 mAdc; pulsed (see 4.4.1) 7 - LTPD - on X LO - 5 Limits - I - Unit - - Vdc Vdc Vdc mAdc Vdc Vdc Vdc - Provided by IHSNot for ResaleNo reproduction or networking permitted wi

41、thout license from IHS-,-,-MIL-S-l9500/341B - Examination or test * wibgroup 1 Physicaldimendais I * Subgroup 3 8066 (h figures 1 and 2.) Open circuit output Real part of small-signal capacitance short circuit input impedance Magnitude of common emitter small-signal short-circuit forward-current .tr

42、ansfer ratio Power output 2N3375 2N4440 Collector efficiency 2N3375, 2N4440 Power output 2N3375 2N4440 Collector efficiency 2N3375, 2N4440 Power output 2N3553 Collector efficiency 2N3553 * Subgroup 4 High-temperature operation Collector to base cutoff current Low-temperature operation Forward-curren

43、t transfer ratio TABLE 1. Group A inspection - Cor MIL-STD-750 Method Details VCB = 30 Vdc; IE = O; 100 kHz 5 f 5 1 MHZ IC = 100 mAdc; VCE = 28 Vdc; f = 200 MHz VCE = 28 Vdc; Ic = 125 mAdc; f = 100MHz Vcc = 28 Vdc; Ph= 1.OW; f = 100 MHz; (see 4.4.4 andfig. 5) VCC = 28 Vdc; Ph = 1. O W; f = 100 MHz (

44、see 4.4.4) VCC = 28 Vdc; Pin = 1. O W; f = 400MHz; (see 4.4.4 and fig. 6) VCC = 28 VdC; Pin = 1. OW; f = 400 MHz (see 4.4.4) Vcc = 28 Vdc; Ph = O. 25 W f = 175 MHz; (see 4.4.4 and fig. 7) f = 175 MHz; (see 4.4.4) VCC = 28 Vdc; Pin = 0.25W, TA = +150 C Bias cond. D; VCB = 30 Vdc TA = -55OC VCE = 5 Vd

45、c; pulsed (see 4.4.1) Ic = 150 ddc; TABLE II. Group B inspection - I 1 Examination or test I I MIL-STD-750 IMethod I Details nued LTPD - cob0 mhie I hfe I Pout Pout ?l Pout Pout 71 Pout 77 - ICBO - FE LTPD I Min - - 3.5 7.5 10 65% 3. O 4. O 40% 2.5 50% - - - lo - Limits - Unit Pf ohms - satts watts

46、_- Natts Natts - uatts .- .- iAdc .- .- Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-S-L9500/34LB 59 W 799T906 OZ03 3 Examination or test t Subgroup 2 Solderability Thermal shock (temperature rhermai shock (glass strain) Ferminai strength (ten

47、sion) 2N3375 and 2N4440 only Fermina strength (stud torque) 2N3375 and 2N4440 only cycling) 3eai (leak-rate) Uoisture resistance End points: (See 4.4.2. ) Collector to emitter cutoff current Power output 2N3375 2N4440 Collector efficiency 2N3375, 2N4440 Power output 2N3553 Collector efficiency 2N355

48、3 k Subgroup 3 ;hock iribration fatigue Iribration, variable frequency TABLE II. Group B inspection - Continued Method 2026 1051 1056 2036 2036 - 1021 3041 - - - - 2016 2046 2056 MIL-STD-750 Details Dwei time = 10 *1 sec for type 2N3375 and 2N4440 only Test cond. C Test cond. B Test cond. A; weight

49、= 5 lb; time = 15 sec each terminai Test cond. 02; torque = 12 in. -1b; time = 15 sec (see 4.4.3) . MIL-STD-202, method 112, test cond. C, procedure LII; test cond. A or B for gross leaks Omit initiai conditioning for 2N3375 and 2N4440 only Bias cond. D; VCE = 30 Vdc VCC = 28 Vdc; Pin = 1.0 W; f = 100 MHz; (see 4.4.4 and fig. 5) Vcc = 28 Vdc; Pin = 1. O W; f = 100