DLA MIL-PRF-19500 707 B-2011 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7500U5 2N7501U5 AND 2N7.pdf

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1、 MIL-PRF-19500/707B 17 March 2011 SUPERSEDING MIL-PRF-19500/707A 6 September 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR This

2、 specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N

3、-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.

4、5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, (surface mount, LCC-18). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC (2) VDSVDGVGSID1(3) (4) TC=+25C ID2 (3) (4) TC= +100C IDM (5) ISTJand TSTGW W C/W V dc V dc V dc A dc A dc

5、 A (pk) A dc C 2N7500U5 25 1.25 5.0 130 130 20 9.0 6.0 36.0 9.0 -55 2N7501U5 25 1.25 5.0 200 200 20 6.3 4.0 25.2 6.3 to 2N7502U5 25 1.25 5.0 250 250 20 5.0 3.2 20.0 5.0 +150 (1) Derate linearly 0.2 W/C for TC +25C; (2) See figure 2, thermal impedance curves. (3) The following formula derives the max

6、imum theoretical IDlimit. IDis limited by package design. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1, as defined in note (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with this revisi

7、on shall be completed by 17 June 2011. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency

8、 of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/707B 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0mA d

9、c VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent Max rDS(on)(1) VGS= 12V, ID= ID2EAS of rated VDSTJ= +25C TJ= +150C V dc V dc Min Max A dc mJ 2N7500U5 130 2.5 4.5 10 0.130 0.300 87 2N7501U5 200 2.5 4.5 10 0.270 0.621 94 2N7502U5 250 2.5 4.5 10 0.450 0.990 93 (1) Pulsed (see 4.5.1). 2.

10、APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has be

11、en made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The

12、following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, Gener

13、al Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue,

14、 Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supers

15、edes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/707B 3 FIGURE 1. Physical dimensions for LCC-18. 181Provided by IHSNot for ResaleNo reproduction or netw

16、orking permitted without license from IHS-,-,-MIL-PRF-19500/707B 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions and tolerancing shall be in accordance with ASME Y14.5M. FIGURE 1. Physical dimensions for LCC-18 - Continued. Dimensions Symbol

17、 Inches Millimeters Min Max Min Max BL .345 .360 8.77 9.14 BW .280 .295 7.12 7.49 CH .095 .115 2.42 2.92 LL1.040 .055 1.02 1.39 LL2.055 .065 1.39 1.65 LS .050 BSC 1.27 BSC LS1.025 BSC .635 BSC LS2.008 BSC .203 BSC LW .020 .030 0.51 0.76 Q1.105 REF 2.67 REF Q2.120 REF 3.05 REF Q3.045 .055 1.15 1.39 T

18、L .070 .080 1.78 2.03 TW .120 .130 3.05 3.30 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/707B 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualifi

19、cation. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbrevia

20、tions, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (LCC-18) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with

21、MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. Metal oxide sem

22、iconductor (MOS) devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools,

23、and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to ap

24、ply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 a

25、nd 1.4 herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups as specified in group A, table I herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be unifor

26、m in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/707B 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirement

27、s specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group

28、E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed

29、 in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced. See the design safe operation area

30、 figures herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/707B 7 4.3 Screening (JANS, JANTX, and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shal

31、l be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS JANTX and JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EASt

32、est (see 4.3.2) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) 9 Subgroup 2 of table I herein Not applicable IGSSF1, IGSSR1, and IDSS1 as a minimum 10 Method 1042 of MIL-STD-75

33、0, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1,subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A d

34、c or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1,subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of ini

35、tial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroups 2 of table I herein IGSSF1 = 20

36、nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. (1) At the end

37、of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by I

38、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/707B 8 4.3.1 Gate stress test. Apply VGS= 24 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current, IAS= ID1 .b. Inductance, L = (2*EAS/(ID1)2)*(VBR-VDD)/VBR) mH m

39、inimum. c. Gate to source resistor, RGS: 25 RGS 200 . d. Supply voltage, VDD= 25 V dc, except VDD= 50 V dc for 2N7502U5. e. Initial case temperature, TC= +25C, -5C, +10C. f. Gate voltage, VGS= 12 V dc. g. Number of pulses to be applied: 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance

40、 measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance i

41、nspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgr

42、oup testing in table E-VIA (JANS) and table E-VIB (JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test

43、condition G, 100 cycles. B3 2077 Scanning electron microscope (SEM). B4 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition

44、 B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

45、hout license from IHS-,-,-MIL-PRF-19500/707B 9 4.4.2.2 Group B inspection, table E-VIB (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device

46、shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordanc

47、e with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Terminal strength is not applicable. C5 3161 See 4.3.3, RJC= 5.0 C/W. C6 1042 Intermittent operation life, condition D, 6,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30

48、seconds minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.5.1 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or proce