DLA MIL-PRF-19500 705 C-2011 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7488T3 2N7489T3 AND 2N7.pdf

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1、 MIL-PRF-19500/705C 24 June 2011 SUPERSEDING MIL-PRF-19500/705B 21 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR This sp

2、ecification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-Ch

3、annel, enhancement-mode, MOSFET, radiation hardened (total dose and Single Event Effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 f

4、or JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, (TO-257AA). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2 (3) (4) TC= +100C ISIDM (5) TJand TSTGW W C/W V dc V dc V dc A dc A dc A dc A (pk) C 2N

5、7488T3 75 1.56 1.67 130 130 20 18 12 18 72 -55 2N7489T3 75 1.56 1.67 200 200 20 12 7.6 12 48 to 2N7490T3 75 1.56 1.67 250 250 20 9.6 6.0 9.6 38.4 +150 (1) Derate linearly 0.6 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDspec

6、s. IDis limited to 18 A by package and device construction. (4) See figure 3, maximum drain current graphs. (5) IDM= 4 X ID1; ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with th

7、is revision shall be completed by 24 September 2011. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verif

8、y the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/705C 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS=

9、 0 ID= 1.0 mA dc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80 percent of rated VDSMax rDS(on)(1) VGS= 12V, ID= ID2EAS TJ= +25C TJ= +150C V dc V dc Min Max A dc mJ 2N7488T3 130 2.5 4.5 10 0.090 0.207 80 2N7489T3 200 2.5 4.5 10 0.230 0.522 60 2N7490T3 250 2.5 4.5 10 0.410 0.820 59 (1) Pulsed (

10、see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While ever

11、y effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and

12、handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 - Semiconductor D

13、evices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MILSTD750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robb

14、ins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howeve

15、r, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/705C 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information onl

16、y. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 5. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone). FIGURE 1. Physical dimensions fo

17、r TO-257AA. Ltr Inches Millimeters Min Max Min Max BL .410 .430 10.41 10.92 BL1.033 0.84 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .625 12.70 15.88 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14

18、TW .410 .420 10.41 10.67 Term 1 Drain Term 2 Source Term 3 Gate TO-257 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/705C 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as mo

19、dified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols,

20、 and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, nonrepetitive nC nano Coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and

21、 on figure 1 (TO-257AA). Methods used for electrical isolation of the terminals shall employ materials that contain a minimum of 90 percent Al2O3(ceramic). 3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500 and herein. Where a choice of fin

22、ish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. 3.4.

23、2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. Metal oxide semiconductor (MOS) devices m

24、ust be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling dev

25、ices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum

26、 rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Ele

27、ctrical test requirements. The electrical test requirements shall be as specified in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/705C 5 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the ma

28、nufacturer, marking of the country of origin may be omitted from the body of the transistor but shall be retained on the initial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect lif

29、e, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). * 4.2 Qualification insp

30、ection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did

31、 not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initial qualificatio

32、n and thereafter whenever a major die design or process change is introduced. See the design safe operation area figures herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/705C 6 4.3 Screening (JANS and JANTXV). Screening shall be

33、in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E- IV Measurement of MIL-PRF-19500) (1) (2) JANS JANTXV (3)

34、 Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) Method 3470 of MIL-STD-750, EAStest (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) 9 Subgroup 2 of ta

35、ble I herein Not applicable IDSS1, IGSSF1, IGSSR1, as a minimum 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is great

36、er. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test

37、 condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initia

38、l value. VGS(TH)1 = 20 percent of initial value. Subgroup 2 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(O

39、N)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cyc

40、ling, screen 3a. JANTXV level does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/705C 7 4.3.1 Gate stress test. Apply VGS= 24 V, minimum for t = 250 S, minimum. 4.3.2 Single pulse ava

41、lanche energy (EAS). a. Peak current . IAS= ID1. b. Inductance . ( )212EIV VVASDBR DDBRmH minimum. c. Gate to source resistor, RGS25 RGS 200 . d. Supply voltage VDD= 25 V dc, except VDD= 50 V dc for 2N7490T3. e. Initial case temperature . TC= +25C, -5C, +10C. f. Gate voltage . VGS= 12 V dc. g. Numbe

42、r of pulses to be applied 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s

43、max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Gr

44、oup B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA(JANS) and table E-VIB(JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection,

45、 table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 Scanning electron microscope (SEM). B4 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. t

46、on= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours mini

47、mum. B5 2037 Bond strength, test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/705C 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 10

48、42 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. B5 and B6 Not applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test condition A; weight = 10 pounds; t = 10 s. C5 3161 Thermal resistance, s