ASTM F1845-1997(2002) Standard Test Method for Trace Metallic Impurities in Electronic Grade Aluminum-Copper Aluminum-Silicon and Aluminum-Copper-Silicon Alloys by High-Mass-Reduct.pdf
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1、Designation: F 1845 97 (Reapproved 2002)Standard Test Method forTrace Metallic Impurities in Electronic Grade Aluminum-Copper, Aluminum-Silicon, and Aluminum-Copper-SiliconAlloys by High-Mass-Resolution Glow Discharge MassSpectrometer1This standard is issued under the fixed designation F 1845; the n
2、umber immediately following the designation indicates the year oforiginal adoption or, in the case of revision, the year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon (e) indicates an editorial change since the last revision or reapproval.1. Sc
3、ope1.1 This test method determines the concentrations of tracemetallic impurities in high purity (99.99 wt. % pure, or purer,with respect to metallic trace impurities) aluminum-copper,aluminum-silicon and aluminum-copper-silicon alloys withmajor alloy constituents as follows:aluminum Greater than 95
4、.0 %copper Less or equal than 5.0 %silicon Less or equal than 5.0 %1.2 This test method pertains to analysis by magnetic-sectorglow discharge mass spectrometer (GDMS).1.3 This test method does not include all the informationneeded to complete GDMS analyses. Sophisticated computer-controlled laborato
5、ry equipment, skillfully used by an experi-enced operator, is required to achieve the required sensitivity.This test method does cover the particular factors (for example,specimen preparation, setting of relative sensitivity factors,determination of detection limits, etc.) known by the respon-sible
6、technical committee to effect the reliability of high purityaluminum analyses.1.4 This standard does not purport to address all of thesafety concerns, if any, associated with its use. It is theresponsibility of the user of this standard to establish appro-priate safety and health practices and deter
7、mine the applica-bility of regulatory limitations prior to use.2. Referenced Documents2.1 ASTM Standards:E 135 Terminology Relating to Analytical Chemistry forMetals, Ores, and Related Materials2E 180 Practice for Determining the Precision of ASTMMethods for Analysis and Testing of Industrial and Sp
8、e-cialty Chemicals3E 673 Terminology Relating to Surface Analysis2E 876 Practice for Use of Statistics in the Evaluation ofSpectrometric DataF 1593 Test Method for Trace Metallic Impurities in Elec-tronic Grade Aluminum by High-Mass-Resolution GlowDischarge Mass Spectrometer4F 1594 Specification for
9、 Pure Aluminum (Unalloyed)Source Material for Vacuum Coating Applications53. Terminology3.1 Terminology in this test method is consistent withTerminology E 135. Required terminology specific to this testmethod, not covered in Terminology E 135, is indicated in 3.2.3.2 Definitions:3.2.1 campaigna tes
10、t procedure to determine the accuracyof the instrument, which was normally performed at thebeginning of the day or after the instrument modification, orboth.3.2.2 reference samplematerial accepted as suitable foruse as a calibration/sensitivity reference standard by all partiesconcerned with the ana
11、lyses.3.2.3 specimena suitably sized piece cut from a referenceor test sample, prepared for installation in the GDMS ionsource, and analyzed.3.2.4 test samplematerial (aluminum alloy) to be ana-lyzed for trace metallic impurities by this GDMS method.3.2.4.1 DiscussionGenerally the test sample is ext
12、ractedfrom a larger batch (lot, casting) of product and is intended tobe representative of the batch.4. Summary of Test Method4.1 A specimen is mounted in a plasma discharge cell.Atoms subsequently sputtered from the specimen surface areionized, and then focused as an ion beam through a double-focus
13、ing magnetic-sector mass separation apparatus. The massspectrum (the ion current) is collected as magnetic field oracceleration voltage, (or both) is scanned.1This test method is under the jurisdiction of ASTM Committee F01 onElectronics and is the direct responsibility of Subcommittee F01.17 on Spu
14、tterMetallization.Current edition approved Dec. 10, 2002. Published May 2003. Originallyapproved in 1997. Last previous edition approved in 1997 as F 1845 97.2Annual Book of ASTM Standards, Vol 03.05.3Annual Book of ASTM Standards, Vol 15.05.4Annual Book of ASTM Standards, Vol 10.04.1Copyright ASTM
15、International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959, United States.4.2 The ion current of an isotope at mass Miis the totalmeasured current, less contributions from all other interferingsources. Portions of the measured current may originate fromthe ion detector alone
16、 (detector noise). Portions may be due toincompletely mass resolved ions of an isotope or molecule withmass close to, but not identical with, Mi. In all such instancesthe interfering contributions must be estimated and subtractedfrom the measured signal.4.2.1 If the source of interfering contributio
17、ns to the mea-sured ion current at Micannot be determined unambiguously,the measured current less the interfering contributions fromidentified sources constitutes an upper bound of the detectionlimit for the current due to the isotope.4.3 The composition of the test specimen is calculated fromthe ma
18、ss spectrum by applying a relative sensitivity factor(RSF(X/M) for each contaminant element, X, compared to thematrix element, M. RSFs are determined in a separate analysisof a reference material performed under the same analyticalconditions, source configuration, and operating protocol as forthe te
19、st specimen.4.4 The relative concentrations of elements X and Y arecalculated from the relative isotopic ion currents I (Xi) and I(Yj) in the mass spectrum, adjusted for the appropriate isotopicabundance factors (A (Xi), A (Yj) and RSFs. I (Xi) and I (Yj)refer to the measured ion current from isotop
20、es Xiand Yj,respectively, of atomic species X and Y as follows:X!/Y!5RSFX/M!/RSFY/M!3AYj!/AXi! 3 IXi!/IYj! (1)where (X)/(Y) is the concentration ratio of atomic species Xto species Y. If species Y is taken to be the aluminum matrix(RSF (M/M) = 1.0), (X) is (with only very small error for puremetal m
21、atrices) the absolute impurity concentration of X.5. Significance and Use5.1 This test method is intended for application in thesemiconductor industry for evaluating the purity of materials(for example, sputtering targets, evaporation sources) used inthin film metallization processes. This test meth
22、od may beuseful in additional applications, not envisioned by the respon-sible technical committee, as agreed upon between the partiesconcerned.5.2 This test method is intended for use by GDMS analystsin various laboratories for unifying the protocol and parametersfor determining trace impurities in
23、 aluminum-copper,aluminum-silicon, and aluminum-copper-silicon alloys. Theobjective is to improve laboratory-to-laboratory agreement ofanalysis data. This test method is also directed to the users ofGDMS analyses as an aid to understanding the determinationmethod, and the significance and reliabilit
24、y of reported GDMSdata.5.3 For most metallic species the detection limit for routineanalysis is on the order of 0.01 wt. ppm. With specialprecautions, detection limits to sub-ppb levels are possible.5.4 This test method may be used as a referee method forproducers and users of electronic-grade alumi
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