DLA SMD-5962-98636 REV D-2011 MICROCIRCUIT LINEAR RADIATION HARDENED JFET-INPUT OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to input offset current test as specified in table I. - ro 99-10-25 R. MONNIN B Make change to 1.5 and add a footnote to TABLE I and TABLE IIB. - ro 00-11-16 R. MONNIN C Add condition “VOUT= 10 V” to the irradiation section of the AVS

2、test and add “VCM= 0 V” to footnote 1/ as specified under table I. Make correction to table IIA. - ro 03-03-07 R. MONNIN D Add CAGE 60264. Delete the words “radiation hardened” from the title block and under paragraph 1.2.2. Delete the letters in the generic numbers under paragraph 1.2.2. Make chang

3、e to footnote 2/ as specified under Table IIA. Delete paragraphs 4.4.4.1 and 4.4.4.2. - ro 11-10-05 C. SAFFLE REV SHEET REV SHEET REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3

4、990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, JFET-INPUT OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING

5、APPROVAL DATE 98-10-08 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-98636 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E495-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98636 DLA LAND AND MARITIME

6、COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are avail

7、able and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 98636 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device

8、 type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA

9、 marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 155A JF

10、ET input operational amplifier 02 156A JFET input operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for

11、 MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminal

12、s Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

13、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98636 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VS) 22 V Input voltage range (VIN) 20 V 2/ Differential input voltage range . 40 V Power

14、dissipation (PD) 670 mW Output short circuit duration Unlimited 3/ Junction temperature (TJ) . 175C 4/ Storage temperature range . -65C to +150C Lead temperature (soldering, 60 seconds) 300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Ca

15、se G 150C/W Case P . 120C/W 1.4 Recommended operating conditions. Supply voltage range (VS) 5 V dc to 20 V dc Ambient temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) . 100 krads 5/ _ 1/ Stresses above the absolute maximum ra

16、ting may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The absolute maximum negative input voltage is equal to the negative power supply voltage. 3/ Short circuit may be to ground or either supply. Rating applies to

17、+125C case temperature or +75C ambient temperature. 4/ For short term test (in the specific burn-in and life test configuration when required and up to 168C hours maximum), TJ= 275C. 5/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.

18、Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98636 DLA LAND AN

19、D MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise speci

20、fied, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Int

21、erface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardiza

22、tion Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes appl

23、icable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (

24、QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, an

25、d physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Ter

26、minal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the e

27、lectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical t

28、ests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the op

29、tion of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSN

30、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98636 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.5.1 Certification/compliance mark. The certification mark for device clas

31、ses Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufactu

32、rer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DL

33、A Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Ce

34、rtificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device clas

35、s M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agen

36、t, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by t

37、his drawing shall be in microcircuit group number 61 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98636 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHE

38、ET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIOVS= 5 V, VCM= 0 V 1 All -2 2 mV VS= 20 V, VCM= 15 V, 0 V 2,3 -2.5 2.5 M,D,P,L,R 1/ 2/

39、1 -2 2 Input offset voltage 3/ temperature sensitivity VIO/ T VS= 20 V, VCM= 0 V 1,2,3 All -10 10 V/C Input offset 4/ 5/ 6/ current IIOVS= 20 V, VCM= 0 V 1 All -20 20 pA 2,3 -20 20 nA M,D,P,L,R 1/ 2/ 1 -0.3 0.3 Input bias 4/ 5/ 6/ current +IIB , VS= 20 V, 1 All -100 3500 pA -IIBVCM= +15 V, t 25 ms 2

40、 -10 60 nA M,D,P,L,R 1/ 2/ 1 -3.0 3.0 nA VS= 15 V, 1 -100 300 pA VCM= +10 V, t 25 ms 2 -10 60 nA VS= 20 V, 1 -100 100 pA -15 V VCM 0 V, t 25 ms 2 -10 50 nA Adjustment for input 3/ offset voltage +VIOADJ, VS= 20 V 1,2,3 All +8 -8 mV -VIOADJ Output voltage swing 3/ (maximum) VOPVS= 20 V, RL= 10 k 1,2,

41、3 All 16 V VS= 20 V, RL= 2 k 15 Output short circuit 3/ 7/ current +IOSVS= 15 V, t 25 ms, 1,2,3 All -50 mA -IOSshort circuit to ground 50 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

42、E A 5962-98636 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply current

43、ISVS= 15 V 1,2 01 4 mA 02 7 3 01 6 02 11 M,D,P,L,R 1/ 2/ 1 01 4 02 7 Open loop voltage 8/ gain (single ended) AVSVS= 20 V, RL= 2 k, 4 All 50 V/mV VOUT= 15 V 5,6 25 M,D,P,L,R 1/ 2/ VOUT= 10 V 4 50 Open loop voltage 3/ 8/ gain (single ended) AVSVS= 5 V, RL= 2 k, VOUT= 2 V 4,5,6 All 10 V/mV Noise (refe

44、rred to input) 3/ broadband NI(BB) VS= 20V, bandwidth = 5 kHz 4 All 10 Vrms Noise (referred to input) 3/ popcorn NI(PC) VS= 20 V, bandwidth = 5 kHz 4 All 40 VPKSlew rate 3/ SR VS= 15 V, VIN= 5 V, 4 01 3 V/s AV= 1 02 10 5,6 01 1.5 02 7 Power supply rejection 3/ ratio +PSRR +VS= 10 V, -VS= -20 V 4,5,6

45、 All 85 dB -PSRR +VS= 20 V, -VS= -10 V 85 Input voltage common 3/ 9/ mode rejection CMR VS= 20 V, VIN= 15 V 4,5,6 All 85 dB See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98636

46、 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Transient response 3/ rise ti

47、me TR(tr) VS= 15 V, RL= 2 k, CL= 100 pF, VIN= 50 mV, 9,10,11 01 150 ns AV= 1 02 100 Transient response 3/ overshoot TR(os) VS= 15 V, RL= 2 k, CL= 100 pF, VIN= 50 mV, AV= 1 9,10,11 01,02 40 % Settling time 3/ +ts, -tsVS= 15 V, 0.1 % error, AV= -1 9 All 1500 ns 1/ RHA devices supplied to this drawing

48、have been characterized through all levels M, D, P, L, and R of irradiation. However, this device is only tested at the “R“ level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. VS= 15 V and VCM= 0 V. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiat