DLA SMD-5962-96670 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS BCD RATE MULTIPLIER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 二进制编码的十进制比率乘数硅单片电路数字微电路》.pdf

《DLA SMD-5962-96670 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS BCD RATE MULTIPLIER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 二进制编码的十进制比率乘数硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96670 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS BCD RATE MULTIPLIER MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 二进制编码的十进制比率乘数硅单片电路数字微电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Changes in accordance with NOR 5962-R033-98. 98-01-29 Monica L. PoelkingB Update boilerplate and appendix A. Editorial changes throughout. - tmh 00-05-10Monica L. PoelkingREVSHEETREV BBBBBBBBBSHEET 15 16 17 18 19 20 21 22 23REV STATUS REV BBBBBBBBBB

2、BBBBOF SHETS SHET 123456789101121314PMIC N/A PREPARED BY Rick C. OfficerDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING

3、 APPROVAL DATE95-12-28MICROCIRCUIT, DIGITAL, RADIATIONHARDENED CMOS, BCD RATE MULTIPLIER,MONOLITHIC SILICONAMSC N/AREVISION LEVELBSIZEACAGE CODE672685962-96670SHEET1 OF 23DSCC FORM 2233APR 97 5962-E205-00DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHS

4、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96670DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels c

5、onsisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the

6、PIN.1.2 PIN. The PIN is as shown in the following example:5962 R 96670 01 V X CG0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0DG0D G0D G0D G0D G0DFederal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (se

7、e 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appr

8、opriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 4527B Radiation hardened CMOS BCD rate multiplier1.2.3 Device class designator. The device class designator is

9、 a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualifica

10、tion to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleE CDIP2-T16 16 Dual-in-line packageX CDFP4-F16 16 Flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38

11、535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96670DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET3DSCC

12、FORM 2234APR 971.3 Absolute maximum ratings. 1/ 2/ 3/Supply voltage range (VDD). -0.5 V dc to +20 V dcInput voltage range -0.5 V dc to VDD + 0.5 VdcDC input current, any one input 10 mADevice dissipation per output transistor 100 mWStorage temperature range (TSTG) -65C to +150CLead temperature (sold

13、ering, 10 seconds). +265CThermal resistance, junction-to-case (JC):Case E. 24C/WCase X. 29C/WThermal resistance, junction-to-ambient (JA):Case E. 73C/WCase X. 114C/WJunction temperature (TJ). +175CMaximum power dissipation at TA = +125C (PD): 4/Case E. 0.68 WCase X. 0.44 W1.4 Recommended operating c

14、onditions.Supply voltage range (VDD). 3.0 V dc to +18 V dcCase operating temperature range (TC) . -55C to +125CInput voltage (VIN). 0 V to VDDOutput voltage (VOUT) . 0 V to VDDRadiation features:Total dose . 1 x 105Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold, no upsets or

15、 latchup (see 4.4.4.4). 75 MEV/(cm2/mg) 5/Dose rate upset (20 ns pulse) 5 x 108 Rads(Si)/s 5/Dose rate latch-up . 2 x 108Rads(Si)/s 5/Dose rate survivability . 5 x 1011Rads(Si)/s 5/2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards,

16、and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDE

17、PARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.1/ Stresses above th

18、e absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ Unless otherwise specified, all voltages are referenced to VSS.3/ The limits for the parameters specified herein shall apply over the full spe

19、cified VCC range and case temperature range of-55C to +125C unless otherwise noted.4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA)at the following rate:Case E . 13.7 mW/CCase X . 8.8 mW/C5/ Guaranteed by design or proce

20、ss but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96670DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET4DSCC FORM 2234APR 97HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 -

21、List of Standard Microcircuit Drawings (SMDs).MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2

22、Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 It

23、em requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as describ

24、ed herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document.3.2 Design, construction, and

25、 physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Termina

26、l connections. The terminal connections shall be as specified on figure 1.3.2.3 Truth tables. The truth tables shall be as specified on figure 2.3.2.4 Radiation exposure circuit. The radiation test connections shall be as specified in table III herein.3.3 Electrical performance characteristics and p

27、ostirradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the fullcase operating temperature range.3.4 Electrical test requirements. The electrical test requireme

28、nts shall be the subgroups specified in table IIA. The electricaltests for each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the e

29、ntire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking fo

30、r device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appen

31、dix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufa

32、cturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requi

33、rements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided

34、with each lot of microcircuits deliveredto this drawing.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.Provided by IHSNot f

35、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96670DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET5DSCC FORM 2234APR 973.9 Verification and review for device class M. For device class M, DSCC, DSCCs age

36、nt, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by thi

37、s drawing shall be inmicrocircuit group number 39 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Man

38、agement (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance w

39、ith MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional cr

40、iteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

41、specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125C, minimum.b. Interim and final electrical test parameters shall be as specified in table IIA herein.4.2.2 Additional criteria for device classes Q and V

42、.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufacturers Techno

43、logy Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod 1015 of MIL-

44、STD-883.b. Interim and final electrical test parameters shall be as specified in table IIA herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V. Qualificat

45、ion inspection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).4.4 Conformance inspection. Technology conformance inspection for cla

46、sses Q and V shall be in accordance withMIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 ofMIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be inaccordance with MIL-PRF-38535, ap

47、pendix A and as specified herein. Inspections to be performed for device class M shall bethose specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

48、om IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96670DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.LimitsTest SymbolConditions-55C 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL 4.5 V, VOL 9.0 V, VOL 13.5 V, VOL VD

49、D/2VOL VDD/2VInput capacitance CIN 1/ Any input, See 4.4.1c All 4 7.5 pF9 300VDD = 5 V, VIN = VDD or GND10, 11 405M, D, L, R 2/ 9 405VDD = 10 V, VIN = VDD or GND 9 1/ 150Propagation delay 4/time, clock to outputtPHL1,tPLH1VDD = 15 V, VIN = VDD or GNDAll9 1/ 120ns9 760VDD = 5 V, VIN = VDD or GND10, 11 1026M, D, L, R 2/