DLA SMD-5962-95732 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS HEX INVERTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体六角倒相器晶体管兼容输入硅单片电路线型微电路》.pdf

《DLA SMD-5962-95732 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS HEX INVERTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体六角倒相器晶体管兼容输入硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95732 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS HEX INVERTER TTL COMPATIBLE INPUTS MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体六角倒相器晶体管兼容输入硅单片电路线型微电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONS LTR APPROVED DATE (YR-MO-DA) DESCRIPTION A Monica L. Poelking 99-02-24 Changes in accordance with NOR 5962-R166-97 B Monica L. Poelking 00-09-1 5 Update boilerplate to MIL-PRF-38535 and updated appendix A. Editorial changes throughout. - tmh OF SHEETS 14 1213 1011 9 8 7 6 5 4 3 12 SHEET PM

2、lC NIA STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA PREPAREDBY Thanh V. Nguyen I CHECKED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITA

3、L, RADIATION HARDENED HIGH SPEED CMOS, HEX DRAWING APPROVAL DATE INVERTER, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON I 95-09-1 4 I REVISION LEVEL B 5962-95732 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E429-00 Licensed by Information Handling Servic

4、esl. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When av

5、ailable, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN is as shown in the following example: 5962 R 95732 o1 T T V T X T C II Federal RHA I I I I Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.

6、2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A spe

7、cified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpefs). The device type(s) identify the circuit function as follows: Device tvpe o1 Generic number HCTS04 Circuit function Radiation hardened, SOS, high speed CMOS, hex inverter

8、, lTL compatible inputs 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class M Device requirements documentation Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B mic

9、rocircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outlinefs). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacle stvle C X CDIP2-Tl4 14 dual-in-line pack

10、age CDFP3-F14 14 flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING IA I I 5962-95732 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET

11、 B 2 USLL tUHM 2234 APR 97 Licensed by Information Handling Services1.3 Absolute maximum ratinas. I/ z/ a/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc DC input voltage range (VIN) . -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) -0.5 V dc to VCC + 0.5 V dc DC input current, any o

12、ne input (h) . and the absolute value of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. Devices supplied to this drawing meet all levels M, D, L, and R of irradiation. However, this device is only tested at the “R“ level. Pre and post irradi

13、ation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25“C. This parameter is guaranteed, if not tested, to the limit specified in table I herein. Power dissipation capacitance (CPD) determines both the pow

14、er consumption (PD) and current consumption (IS). Where PD = (CPD + CL) (Vcc X Vcc)f + (ICC X Vcc) + (n X d X Alcc X Vcc) Is = (CPD + CL) Vccf + Icc + (n X d X Alcc) f is the frequency of the input signal; n is the number of device inputs at -TL levels; and d is the duty cycle of the input signal. T

15、he test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. All possible input to output logic patterns per function shall be guaranteed, if not tested, to the truth table in figure 2 herein. For VOUT measurements, L 0.5 V and H t 4.0 V. AC limits

16、 at VCC = 5.5 V are equal to the limits at VCC = 4.5 V. For propagation delay tests, all paths must be tested. This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes which affect this characteristic. STANDARD MICROCIRCUIT DRAWING IA I I 59

17、62-95732 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET B 8 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesDevice type Case outlines Terminal number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 All C and X Terminal symbol Al Y1 A2 Y2 A3 Y3 GND Y4 A4 Y5 A5 Y6 A6 vc

18、c - - - - - - FIGURE l. Terminal connections. H = High voltage level L = Low voltage level FIGURE 2. Truth table. STANDARD MICROCIRCUIT DRAWING IA I I 5962-95732 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET B 9 USLL tUHM 2234 APR 97 Licensed by Information Handling

19、ServicesFIGURE 3. Loaic diaaram. STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 I 5962-95732 I APR 97 Licensed by Information Handling ServicesINPUT tfii* 0.3 E 1.3 V 0.0 v t -I t - OUTPUT THL DUT O m 0 TEST POINT CL 11 RL 0 NOTES: l. CL = 50 pF minimum or eq

20、uivalent (includes test jig and probe capacitance). 2. RL = 500Q or equivalent. 3. Input signal from pulse generator: VIN = 0.0 V to 3.0 V; PRR 1 O MHz; tr 3.0 ns; tf 3.0 ns; tr and tf shall be measured from 0.3 V to 2.7 V and from 2.7 V to 0.3 V, respectively. FIGURE 4. Switchincl waveforms and tes

21、t circuit. STANDARD MICROCIRCUIT DRAWING IA I I 5962-95732 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET B 11 USLL tUHM 2234 APR 97 Licensed by Information Handling Services4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in

22、accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specif

23、ied herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein b. For device class M, subgrou

24、ps 7 and 8 tests shall be sufficient to verify the truth table. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). c. Subgroup 4, 5 and 6 (C

25、IN and CPD measurement) shall be measured only for the initial qualification and after process or design changes which may affect capacitance. CIN shall be measured between the designated terminal and GND at a frequency of 1 MHz. For CIN and CPD the tests shall be sufficient to validate the limits d

26、efined in table I herein. TABLE IIA. Electrical test requirements. - 1/ PDA applies to subgroup 1 and 7. - 2/ PDA applies to subgroups 1, 7, 9 and deltas. - 3/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed with reference to the zero

27、 hour electrical parameters (see Table I) TABLE IIB. Burn-in and operatinq life test, Delta parameters 1+25“C). Parameters I/ Delta limits ICC +3.0 pA I IOL/OH I -1 5% I - 1/ These parameters shall be recorded before and after the required burn-in and life test to determine delta limits. 4.4.2 Group

28、 C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein. STANDARD MICROCIRCUIT DRAWING IA I I 5962-95732 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET B 12 USLL tUHM 2234 APR 97 Licensed by Information Handling S

29、ervices4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiri

30、ng activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 Of MIL-STD-883. b. TA = +125“C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-ST

31、D-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under doc

32、ument revision level control by the device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the inte

33、nt specified in test method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein. 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see

34、 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1

35、O1 9 and as specified herein. 4.4.4.1.1 Accelerated aqinq test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the pre-irradiation end

36、-point electrical parameter limit at +25“C &5“C. Testing shall be performed at initial qualification and after any design or process changes which may affect the RHA response of the device. 4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance

37、with test method 1020 of MIL-STD-883 and as specified herein (see 1.4 herein). Tests shall be performed on devices, SEC, or approved test structures at technology qualification and after any design or process changes which may effect the RHA capability of the process. 4.4.4.3 Dose rate upset testing

38、. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL- STD-883 and herein (see 1.4 herein). a. Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may effect the RHA performance of the devices.

39、Test 1 O devices with O defects unless otherwise specified. b. Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation hardness assurance plan and MIL-PRF-38535. 4.4.4.4 Sinde event phenomena SEP). SEP testing shall be required on class

40、 V devices (see 1.4 herein). SEP testing shall be performed on a technology process on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup cha

41、racteristics. The recommended test conditions for SEP are as follows: a. The ion beam angle of incidence shall be between normal to the die surface and 60“ to the normal, inclusive (.e. O“ angle 60“). No shadowing of the ion beam due to fixturing or package related effects is allowed. b. The fluence

42、 shall be t 1 O0 errors or t 1 O6 ions/cm2. c. The flux shall be between 10 and 1 O5 ions/cm2/s. The cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. The particle range shall be t 20 microns in

43、silicon. e. The test temperature shall be +25“C and the maximum rated operating temperature &lOC. STANDARD MICROCIRCUIT DRAWING IA I I 5962-95732 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET B 13 USLL tUHM 2234 APR 97 Licensed by Information Handling Servicesf. Bias

44、 conditions shall be defined by the manufacturer for latchup measurements. g. Test four devices with zero failures. 4.5 Methods of inspection. Methods of inspection shall be as specified as follows: 4.5.1 Voltacle and current. Unless otherwise specified, all voltages given are referenced to the micr

45、ocircuit GND terminal. Currents given are conventional current and positive when flowing into the referenced terminal. Table 111. Irradiation test connections. L/ Open Ground Vcc=5 V f 0.5 V 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 - 11 Each pin except VCC and GND will have a series resistor of 4

46、7KQ &%, for irradiation testing. 5. PACKAGING 5.1 Packaqinq requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are inten

47、ded for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability.

48、Device class Q devices will replace device class M devices. 6.2 Confiauration control of SMDs. All proposed changes to existing SMDs will be coordinated with the users of record for the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692, En

49、gineering Change Proposal. 6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system application requires configuration control and which SMDs are applicable to that system. DSCC will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525. 6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 4321 6-5000, or telephone (6