DLA SMD-5962-95727 REV D-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 3-TO-8 LINE DECODER DEMULTIPLEXER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体3到8行译码器或信号分离器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95727 REV D-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 3-TO-8 LINE DECODER DEMULTIPLEXER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体3到8行译码器或信号分离器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95727 REV D-2005 MICROCIRCUIT DIGITAL RADIATION HARDENED HIGH SPEED CMOS 3-TO-8 LINE DECODER DEMULTIPLEXER MONOLITHIC SILICON《高速抗辐射互补金属氧化物半导体3到8行译码器或信号分离器硅单片电路线型微电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R089-98. - thl 98-04-20 Raymond L. Monnin B Add device class T criteria. Editorial changes throughout. - jak 98-12-07 Monica L. Poelking C Correct the total dose rate and update RHA levels. - LTG 99-04-29 Monic

2、a L. Poelking D Update boilerplate to MIL-PRF-38535 requirements. Editorial changes throughout. - LTG 05-07-15 Thomas M. Hess REV SHET REV D D D D D D D D SHEET 15 16 17 18 19 20 21 22 REV STATUS REV D B C D D C C D B B B D B D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Th

3、anh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 9

4、5-10-30 MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, 3-TO-8 LINE DECODER/DEMULTIPLEXER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-95727 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E390-05 Provided by IHSNot for ResaleNo reproduction or networking permitted

5、without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95727 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device

6、classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance

7、(RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 9572

8、7 01 V E C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA l

9、evels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit

10、 function as follows: Device type Generic number Circuit function 01 HCS138 Radiation hardened, SOS, high speed CMOS, 3-to-8 line decoder/demultiplexer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Devic

11、e requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with perfo

12、rmance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead

13、 finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95727 DEFENSE SUPPLY C

14、ENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC inpu

15、t current, any one input (IIN). 10 mA DC output current, any one output (IOUT) 25 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds). +265C Thermal resistance, junction-to-case (JC): Case outline E 24C/W Case outline X 29C/W Thermal resistance, junction-to-a

16、mbient (JA): Case outline E 73C/W Case outline X 114C/W Junction temperature (TJ) +175C Maximum package power dissipation at TA= +125C (PD): 4/ Case outline E 0.68 W Case outline X 0.44 W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage rang

17、e (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCMaximum low level input voltage (VIL) 30% of VCCMinimum high level input voltage (VIH). 70% of VCCCase operating temperature range (TC). -55C to +125C Maximum input rise and fall time at VCC= 4.5 V (tr, tf) 500 ns 1.5 Radiation fea

18、tures: Maximum total dose available (dose rate = 50 300 rad (Si)/s) Device class M,Q, or V 2 x 105Rads (Si) Device class T. 1 x 105Rads (Si) Single event phenomenon (SEP) effective linear energy threshold (LET), no upsets (see 4.4.4.4) 100 MeV/(cm2/mg) 5/ Dose rate upset (20 ns pulse) . 1 x 1010Rads

19、 (Si)/s 5/ Latch-up None 5/ Dose rate survivability . 1 x 1012Rads (Si)/s 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are re

20、ferenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C unless otherwise noted. 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is base

21、d on JA) at the following rate: Case outline E . 13.7 mW/C Case outline X . 8.8 mW/C 5/ Guaranteed by design or process but not tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95727 DEFENSE SUPPLY CEN

22、TER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise spe

23、cified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - I

24、nterface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.d

25、la.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this docu

26、ment, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the devi

27、ce manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A, and as specified herein. 3.1.1 Microcircuit die.

28、For the requirements for microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T, and V or MIL-PRF-38535, appendix A and herein fo

29、r device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shal

30、l be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Irradiation test connections. The irradiation test connections shall be as specified in table III. Provided by IHSNot for ResaleNo reproduction

31、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95727 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherw

32、ise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tab

33、le IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the

34、 manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535,

35、appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device class

36、es Q, T, and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved sou

37、rce of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q, T, and V, the requirements of MIL-PRF-38535 and herein or fo

38、r device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits del

39、ivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. Fo

40、r device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. D

41、evice class M devices covered by this drawing shall be in microcircuit group number 39 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95727 DEFENSE SUPPLY CENTER COLUMBUS COLU

42、MBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type VCCGroup A subgroups Limits 2/ UnitMin Max High level output voltage VOH For all inputs affecting

43、output under test VIN= 3.15 V or 1.35 V For all other inputsAll 4.5 V 1, 2, 3 4.40 V VIN= VCCor GND IOH= -50 A M, D, P, L, R 3/ All 1 4.40 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs All 5.5 V 1, 2, 3 5.40 VIN= VCCor GND IOH= -50 A M, D, P, L, R 3/ All 1 5.4

44、0 Low level output voltage VOL For all inputs affecting output under test VIN= 3.15 V or 1.35 V For all other inputs All 4.5 V 1, 2, 3 0.1 V VIN= VCCor GND IOL= 50 A M, D, P, L, R 3/ All 1 0.1 For all inputs affecting output under test VIN= 3.85 V or 1.65 V For all other inputs All 5.5 V 1, 2, 3 0.1

45、 VIN= VCCor GND IOL= 50 A M, D, P, L, R 3/ All 1 0.1 Input current high IIHFor input under test, VIN= 5.5 V For all other inputs VIN= VCCor GND All 5.5 V 1 +0.5 A 2, 3 +5.0 M, D, P, L, R 3/ All 1 +5.0 Input current low IILFor input under test, VIN= GND For all other inputs VIN= VCCor GND All 5.5 V 1

46、 -0.5 A 2, 3 -5.0 M, D, P, L, R 3/ All 1 -5.0 See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95727 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEE

47、T 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Devicetype VCCGroup A subgroups Limits 2/ Unit Min Max Output current high (Source) IOHFor all inputs affecting output under test, VIN= 4.5 V

48、 or 0.0 V All 4.5 V 1 -7.2 mA For all other inputs 2, 3 -6.0 VIN= VCCor GND VOUT= 4.1 V M, D, P, L, R 3/ All 1 -6.0 Output current low (Sink) IOLFor all inputs affecting output under test, VIN= 4.5 V or 0.0 V All 4.5 V 1 7.2 mA For all other inputs 2, 3 6.0 VIN= VCCor GND VOUT= 0.4 V M, D, P, L, R 3

49、/ All 1 6.0 Quiescent supply current ICCVIN= VCCor GND All 5.5 V 1 40.0 A 2, 3 750.0M, D, P, L, R 3/ All 1 750.0Input capacitance CINVIH= 5.0 V, VIL= 0.0 V f = 1 MHz, see 4.4.1c All 5.0 V 4 10.0 pF Power dissipation capacitance CPD4/ All 5.0 V 4 78.0 pF 5, 6 113.0Functional test 5/ VIH= 3.15 V, VIL= 1.35 V All 4.5 V 7, 8 L H