DLA SMD-5962-94590 REV A-2006 MICROCIRCUIT DIGITAL ECL LOW POWER QUINT EXCLUSIVE OR NOR GATE MONOLITHIC SILICON《硅单片 低功率五重异或门 ECL数字微型电路》.pdf
《DLA SMD-5962-94590 REV A-2006 MICROCIRCUIT DIGITAL ECL LOW POWER QUINT EXCLUSIVE OR NOR GATE MONOLITHIC SILICON《硅单片 低功率五重异或门 ECL数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-94590 REV A-2006 MICROCIRCUIT DIGITAL ECL LOW POWER QUINT EXCLUSIVE OR NOR GATE MONOLITHIC SILICON《硅单片 低功率五重异或门 ECL数字微型电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to current requirements. Editorial changes throughout. - gap 06-10-02 Raymond Monnin REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Larry T. Gauder DEFENSE SUPPLY CE
2、NTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thomas M. Hess COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ECL, LOW POWER QUINT EXCLUSIVE OR/NOR GATE, AND AGENCIES OF THE DEPARTMENT
3、 OF DEFENSE DRAWING APPROVAL DATE 94-04-22 MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-94590 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E523-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S
4、IZE A 5962-94590 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A cho
5、ice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94590 01 M X X Federal stock c
6、lass designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the
7、 appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device
8、type Generic number Circuit function 01 100307 Low power quint exclusive OR/NOR Gate 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the req
9、uirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive design
10、ator Terminals Package style X GDIP5-T24 or CDIP6-T24 24 dual-in-line package Y See figure 1 24 quad-flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproducti
11、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94590 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Negative supply voltage range (VEE) -7.0 V dc to +0.5 V dc
12、DC input voltage range (VIN) VEEto +0.5 V dc DC input current range (IIN) -30 mA to +5.0 mA Maximum dc output current (IOUT) -50 mA Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) . +175C Maximum power dissipation (PD) 500 mW Thermal
13、 resistance, junction-to-case (JC): Case X See MIL-STD-1835 Case Y 28 C/W 1.4 Recommended operating conditions. Negative supply voltage range (VEE) -5.7 V dc minimum to -4.2 V dc maximum High level input voltage range (VIH) -1.165 V dc minimum to -0.870 V dc maximum Low level input voltage range (VI
14、L) . -1.830 V dc minimum to -1.475 V dc maximum Case operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unle
15、ss otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits.
16、MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www
17、.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in
18、 this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provid
19、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94590 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual it
20、em requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item r
21、equirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for d
22、evice classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth tab
23、le shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. 3.2.5 Test circuit and switching waveforms. Test circuit and switching waveforms shall be as specified on figure 5. 3.3 Electrical performance characteristics and postirradiation parameter
24、 limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subg
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