DLA SMD-5962-90908 REV A-2003 MICROCIRCUIT LINEAR CMOS 8-BIT DAC WITH OUTPUT AMPLIFIER MONOLITHIC SILICON《硅单块 带输出放大器的互补金属氧化物半导体8比特数字至模拟转换器 直线式微型电路》.pdf
《DLA SMD-5962-90908 REV A-2003 MICROCIRCUIT LINEAR CMOS 8-BIT DAC WITH OUTPUT AMPLIFIER MONOLITHIC SILICON《硅单块 带输出放大器的互补金属氧化物半导体8比特数字至模拟转换器 直线式微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90908 REV A-2003 MICROCIRCUIT LINEAR CMOS 8-BIT DAC WITH OUTPUT AMPLIFIER MONOLITHIC SILICON《硅单块 带输出放大器的互补金属氧化物半导体8比特数字至模拟转换器 直线式微型电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - ro 03-01-28 R. MONNIN REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY SANDRA ROONEY DEFENSE SUPPLY CENTER COLUMBUS STANDAR
2、D MICROCIRCUIT DRAWING CHECKED BY SANDRA ROONEY COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, CMOS 8-BIT DAC WITH OUTPUT AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWIN
3、G APPROVAL DATE 94-04-29 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90908 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E186-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license
4、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90908 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) a
5、nd space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following ex
6、ample: 5962 - 90908 01 M V X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535
7、specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) ident
8、ify the circuit function as follows: Device type Generic number Circuit function 01 AD7224U 8-bit DAC with output amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation
9、 M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as fol
10、lows: Outline letter Descriptive designator Terminals Package style V GDIP1-T18 or CDIP2-T18 18 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Pro
11、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90908 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ VDDto AGND -0.3 V dc
12、, +17 V dc VDDto DGND -0.3 V dc, +17 V dc VSSto AGND . -7 V dc, VDDVSSto DGND . -7 V dc, VDDVDDto VSS. -0.3 V dc, +24 V dc AGND to DGND -0.3 V dc, VDDDigital input voltage to DGND -0.3 V dc, VDDVREFto AGND . -0.3 V dc, VDDVOUTto AGND . VSS, VDDPower dissipation (PD) 450 mW 2/ Storage temperature ran
13、ge . -65C to +160C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case outline V 120C/W Case outline 2 120C/W 1.4 Recommended operating conditions. Operating temperature range . -55C to +125C 2.
14、APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of
15、Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuit
16、s. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are availa
17、ble from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derat
18、e linearly above TA= +75C at 6 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90908 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of
19、precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item re
20、quirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described
21、herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in M
22、IL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. T
23、he truth table shall be as specified on figure 2. 3.2.4 Timing waveforms. The timing waveforms shall be as specified on figure 3. 3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post i
24、rradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3
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- DLASMD596290908REVA2003MICROCIRCUITLINEARCMOS8BITDACWITHOUTPUTAMPLIFIERMONOLITHICSILICON 硅单块带 输出 放大器

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