DLA SMD-5962-89795 REV D-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUS BUFFER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
《DLA SMD-5962-89795 REV D-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUS BUFFER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-89795 REV D-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUS BUFFER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf(26页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Add section 1.5, radiation features. Update the boilerplate to MIL-PRF-38535 requirements and to include radiation hardeness assured requirements. Editorial changes throughout. TVN 05-03-15 Thomas M. Hess B Add case outline R.
2、 TVN 06-03-07 Thomas M. Hess C Add die requirement appendix A for device type 02. Update title with Radiation hardened to reflect correct function of the device. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - MAA 10-05-26 Thomas M. Hess D Update case outline X for flat pack d
3、imension A and add dimensions E2 and E3 to figure 1. Delete class M requirement throughout. Update devices supply information bulletin page- MAA 13-12-10 Thomas M. Hess REV SHEET REV D D D D D D D D D D D SHEET 15 16 17 18 19 20 21 22 23 24 25 REV STATUS OF SHEETS REV D D D D D D D D D D D D D D SHE
4、ET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Charles F. Saffle DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED
5、BY Charles F. Saffle APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUS BUFFER WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 01-07-25 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-89795 SHEET 1 OF 25 DSCC FORM 223
6、3 APR 97 5962-E457-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing docu
7、ments two product assurance class levels consisting of high reliability device class Q and space application device class V. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (
8、RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 89795 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number
9、1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generi
10、c number Circuit function 01 54ACT541 Octal bus buffer with three-state outputs, TTL compatible inputs 02 54ACT541 Radiation hardness, Octal bus buffer with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the produc
11、t assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20
12、or CDIP2-T20 20 Dual-in-line X See figure 1 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITI
13、ME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc
14、DC input clamp current (IIK) (VINVCC) . 20 mA DC output clamp current (IOK) (VOUTVCC) 20 mA Continuous output current (IOUT) (VOUT= 0.0 V to VCC) 50 mA Continuous VCCor GND current (ICC, IGND). 200 mA Maximum power dissipation (PD) 500 mW Storage temperature range (TSTG) . -65C to +150C Lead tempera
15、ture (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) 175C 4/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VCCOutput voltage range (VOUT). 0.0 V
16、dc to VCCInput rise or fall time rate (t/V): VCC= 4.5 V to 5.5 V . 0 to 8 ns/V Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Device type 02: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) No Single Event Latch-up (SEL) at an effective LET
17、 (see 4.4.4.4) 93 MeV-cm2/mg 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the param
18、eters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD -883. Provided by IHSNot f
19、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-89795 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks.
20、 The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits Manufa
21、cturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard M
22、icrocircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document
23、to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices. (Copies of t
24、hese documents are available online at http:/www.jedec.org or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201.) ASTM INTERNATIONAL (ASTM) ASTM F1192- Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradia
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