DLA SMD-5962-88655-1989 MICROCIRCUIT DIGITAL FAST CMOS OCTAL D-TYPE FLIP-FLOP MONOLITHIC SILICON《硅单片八进制D型触发器高速互补型金属氧化物半导体数字微电路》.pdf
《DLA SMD-5962-88655-1989 MICROCIRCUIT DIGITAL FAST CMOS OCTAL D-TYPE FLIP-FLOP MONOLITHIC SILICON《硅单片八进制D型触发器高速互补型金属氧化物半导体数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-88655-1989 MICROCIRCUIT DIGITAL FAST CMOS OCTAL D-TYPE FLIP-FLOP MONOLITHIC SILICON《硅单片八进制D型触发器高速互补型金属氧化物半导体数字微电路》.pdf(13页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDREVSHEETREVSHEETREV STATUSOF SHEETSREVSHET 1234567891011213PMIC N/APREPARED BY Larry T. Gauder DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444STANDARDIZEDMILITARYDRAWINGTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAND AGENCIES OF THEDEPARTME
2、NT OF DEFENSEAMSC N/A CHECKED BYRay MonninMICROCIRCUITS, DIGITAL, FAST CMOS, OCTAL D-TYPE, FLIP-FLOP, MONOLITHIC SILICONAPPROVED BYMichael A. FryeDRAWING APPROVAL DATE30 MAY 1989SIZEACAGE CODE672685962-88655REVISION LEVELSHEET 1 OF 13DESC FORM 193SEP 87 5962-E1257-4DISTRIBUTION STATEMENT A. Approved
3、 for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-88655REVISION LEVEL SHEET2DESC FORM 193AJUL 911. SCOPE1.1 Scope. T
4、his drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883,“Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. 1.2 Part number. The complete part number shall be as shown in the following example:5962 - 88655 01 R X
5、G0DG0DG0DG0DG0D G0D G0D G0D Drawing number Device type Case outline Lead finish per(see 1.2.1) (see 1.2.2) MIL-M-385101.2.1 Device types. The device types shall identify the circuit function as follows:Device type Generic number Circuit function01 54FCT534 Octal D-type flip-flops, with three-state o
6、utputs02 54FCT534A Octal D-type flip-flops, with three-state outputs1.2.2 Case outlines. The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:Outline letter Case outlineR D-8 (20-lead, 1.060“ x .310“ x .200“), dual-in-line packageS F-9 (20-lead, .540“ x .300“ x .100“
7、), flat package2 C-2 (20-terminal, .358“ x .358“ x .100“), square chip carrier package 1.3 Absolute maximum ratings. Supply voltage range . -0.5 V dc to +6.0 V dcInput voltage range -0.5 V dc to V + 0.5 V dcCCOutput voltage range . -0.5 V dc to V + 0.5 V dcCCDC input diode current (I ) -20 mAIKDC ou
8、tput diode current (I ) -50 mAOKDC input current . 100 mAMaximum power dissipation (P ) 2/ 500 mWDThermal resistance, junction-to-case (G14 ) . See MIL-M-38510, appendix CJCStorage temperature range -65G28C to +125G28CJunction temperature (T ) . +175G28CJLead temperature (soldering, 10 seconds) +300
9、G28C1.4 Recommended operating conditions. Supply voltage range (V ) . +4.5 V dc to +5.5 V dcCCMaximum low level input voltage (V ) . 0.8 V dcILMinimum high level input voltage (V ) . 2.0 V dcIHCase operating temperature range (T ) -55G28C to +125G28CC1/ All voltages referenced to GND.2/ Must withsta
10、nd the added P due to short circuit test, e.g., I .DOSProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-88655REVISION LEVEL SHEET3DESC FORM 193AJUL 912. APPLICABLE
11、 DOCUMENTS2.1 Government specification and standard. Unless otherwise specified, the following specification and standard, of the issuelisted in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent spec
12、ified herein.SPECIFICATIONSMILITARYMIL-M-38510 - Microcircuits, General Specification for.STANDARDSMILITARYMIL-STD-883 - Test Methods and Procedures for Microelectronics.(Copies of the specification and standard required by manufacturers in connection with specific acquisition functions should beobt
13、ained from the contracting activity or as directed by the contracting activity.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text ofthis drawing shall take precedence.3. REQUIREMENTS3.1 Item requirements. The individual ite
14、m requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883,“Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall
15、be as specified inMIL-M-38510 and herein.3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.2 Truth table. The truth table shall be as specified on figure 2.3.2.3 Case outlines. The case outlines shall be in accordance with 1.2.2 herein.3.3 Electrical performa
16、nce characteristics. Unless otherwise specified herein, the electrical performance characteristics are asspecified in table I and apply over the full case operating temperature range. 3.4 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall be marked with the par
17、tnumber listed in 1.2 herein. In addition, the manufacturers part number may also be marked as listed in 6.4 herein. 3.5 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as anapproved source of supply in 6.4. The certificate of compli
18、ance submitted to DESC-ECS prior to listing as an approved source ofsupply shall state that the manufacturers product meets the requirements of MIL-STD-883 (see 3.1 herein) and the requirementsherein.3.6 Certificate of conformance. A certificate of conformance as required in MIL-STD-883 (see 3.1 her
19、ein) shall be provided witheach lot of microcircuits delivered to this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-88655REVISION LEVEL SHEET4DESC FOR
20、M 193AJUL 91TABLE I. Electrical performance characteristics.Test Symbol Conditions-55G28C G06 T G06 +125G28CCV = 5.0 V dc 10%CCunless otherwise specifiedGroup AsubgroupsDevicetypeLimits 2/UnitMin MaxHigh level output voltage VOHV = 4.5 V,CC V = 0.8 VILV = 2.0 VIHI = -300 G29AOH1, 2, 3 All 4.3 VI = -
21、12 mAOH1, 2, 3 All 2.4 VLow level output voltage VOLV = 4.5 V, CCV = 0.8 VILV = 2.0 VIHI = 300 G29AOL1, 2, 3 All 0.2 VI = 32 mAOLAll 0.5 VInput clamp voltage VIKV = 4.5 V, I = -18 mACC IN1Al -1.2VHigh level inpu current IIHV = 5.5 V, V = 5.5 VCC IN1, 2, 3 All 5.0 G29ALow level input current IILV = 5
22、.5 V, V = GNDCC IN1, 2, 3 All -5.0 G29AHigh impedance output current IOZHV = 5.5 V, V = 5.5 VCC OUT1, 2, 3 All 10 G29ALow impedance output current IOZLV = 5.5 V, V = GNDCC OUT1, 2, 3 All -10 G29AShort circuit output current IOSV = 5.5 V 1/ V = 0.0 VCC OUT1, 2, 3 All -60 mAQuiescent power supply curr
23、ent(CMOS inputs)ICCQV G06 0.2 V or V G07 5.3 V,IN INV 5.5 V, f = f = 0 MHzCC I CP1, 2, 3 All 1.5 mAPower supply current(TTL inputs high)G8CICCV = 5.5 V, V = 3.4 V 2/CC IN1, 2, 3 All 2.0 mADynamic power supply current ICCDV = 5.5 V, ouputs openCC V G06 0.2 V or V G07 5.3 V,IN INOE = GNDone bit toggli
24、ng: 50% duty cycle3/Al 0.4mA/MHzTotal power supply current 4/ ICCV G06 0.2 V or V G07 5.3 V,IN INV 5.5 V, f = 10 Mhz,CC CPoutrputs open,one bit toggling: 50% duty cyclefI = 5 MHz, OE = GND1, 2, 3 All 5.5 mASee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permi
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