DLA SMD-5962-87609 REV E-2007 MICROCIRCUIT DIGITAL ADVANCED CMOS HEX INVERTER MONOLITHIC SILICON《硅单块 八进制高级互补金属氧化物半导体 数字微型电路》.pdf

《DLA SMD-5962-87609 REV E-2007 MICROCIRCUIT DIGITAL ADVANCED CMOS HEX INVERTER MONOLITHIC SILICON《硅单块 八进制高级互补金属氧化物半导体 数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-87609 REV E-2007 MICROCIRCUIT DIGITAL ADVANCED CMOS HEX INVERTER MONOLITHIC SILICON《硅单块 八进制高级互补金属氧化物半导体 数字微型电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes to ac limits in table I. Add vendor CAGE 18714 to device type 01CX. Change drawing CAGE code to 67268. Editorial changes throughout. 87-11-25 M. A. Frye B Add device type 02. Add vendor CAGE 01295. Add case outlines R and S. Technical chan

2、ges in 1.4 and table I. Change vendor CAGE 07263 to 27014. Editorial changes throughout. 89-08-14 M. A. Frye C Add vendor CAGE F8859. Add device class V criteria. Add delta limits, table III. Add case outline X. Update boilerplate. Editorial changes throughout. lgt 01-02-12 Raymond Monnin D Add sect

3、ion 1.5, radiation features. Correct input voltage levels and delete note 1 in figure 4. Update boilerplate to MIL-PRF-38535 requirements and to include radiation hardness assured requirements. Editorial changes throughout. LTG 04-08-20 Thomas M. Hess E Add appendix A, microcircuit die. Update boile

4、rplate to MIL-PRF-38535 requirements. - CFS 07-02-16 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHET REV E E E E E E E E SHEET 15 16 17 18 19 20 21 22 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Marcia B. Kelleher CHECKED BY Monica

5、 L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, HEX INVERTER, MONOLITHIC SILICON DRAWING APPROVAL DATE 87-06-24 STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPART

6、MENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 14933 5962-87609 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E167-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-876

7、09 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case ou

8、tlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: For device classes M and Q: 5962 - 87609 01 C A Fed

9、eral RHA Device Case Lead stock class designator type outline finish designator (see 1.2.1) (see 1.2.2) (see 1.2.4) (see 1.2.5) / / Drawing number For device class V: 5962 F 87609 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (se

10、e 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendi

11、x A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC04 Hex inverter 02 54AC11004 Hex inverter 1.2.3 De

12、vice class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not

13、 be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHS

14、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in M

15、IL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP3-

16、F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.

17、5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) 20 mA DC output current. 50 mA DC VCCor GND current (per pin) . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) 500 mW Lead temperature (soldering, 10 seconds). +26

18、0C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCCase operating

19、temperature range (TC). -55C to +125C Input rise or fall times (tr, tf): VCC= 3.6 V 0 to 8 ns VCC= 5.5 V 0 to 8 ns 1.5 Radiation features. Device type 01: Total dose (dose rate = 50 300 rads (Si)/s) . 300 krads (Si) Single Event Latchup (SEL) 93 MeVcm2/mg 6/ 1/ Stresses above the absolute maximum ra

20、ting may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and ca

21、se temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and ba

22、ttery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30% VCC, VOH 70% VCC -20 A, VOL 30% VCC 20 A. 6/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through th

23、e purchase order or contract.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMEN

24、TS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENS

25、E SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List o

26、f Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5

27、094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitation or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 20 - Standard for Des

28、cription of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA, 22201-3834). AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 -

29、 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, West Conshohocken, PA, 19428-2959). 2.3 Order of pre

30、cedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requi

31、rements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described her

32、ein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and p

33、hysical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

34、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be

35、as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Radi

36、ation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unles

37、s otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specifi

38、ed in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limita

39、tions, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-3

40、8535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device cla

41、sses Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved sourc

42、e of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for devi

43、ce class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to

44、this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device c

45、lass M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device clas

46、s M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87609 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

47、 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V Device type and VCCGroup A subgroups Limits 4/ Unitunless otherwise specified Device class Min

48、 Max Positive input clamp voltage 3022 VIC+For input under test, IIN= 1.0 mA All V 0.0 V 1 0.4 1.5 V Negative input clamp voltage 3022 VIC-For input under test, IIN= -1.0 mA All V Open 1 -0.4 -1.5 V High level output voltage VOH VIN= VIHminimum or VILmaximum IOH= -50 A All All 3.0 V 1, 2, 3 2.9 V 3006 5/ All All 4.5 V 4.4 All All 5.5 V 5.4 1 2.56 VIN= VIHminimum or VILmaximum IOH= -12 mA All All 3.0 V 2, 3 2.4 IN= VIHminimum or VILmaximum All 4.5 V 1 3.86 OH=