DLA SMD-5962-10221 REV A-2013 MICROCIRCUIT LINEAR SYNCHRONOUS STEP DOWN CONVERTER MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add radiation hardness assurance requirements. - ro 13-11-15 C. SAFFLE REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43
2、218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, SYNCHRONOUS STEP DOWN CONVERTER, MONOLITHIC SILICON D
3、RAWING APPROVAL DATE 13-06-14 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-10221 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E567-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MA
4、RITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are availa
5、ble and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 10221 01 V S C Federal stock class designator RHA designator (see 1.2.1) Device
6、type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicate
7、s a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 TPS50601-SP 6.3 V, 6 A synchronous step down converter 1.2.3 Device class designator. The device class designator is a single letter identifying the p
8、roduct assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style S CDFP3
9、-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MARITIME COLUMBUS, OHIO 432
10、18-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage (VIN) : Input voltage (VIN) . -0.3 V to 7 V Power input voltage (PVIN) -0.3 V to 7 V Enable (EN) . -0.3 V to 5.5 V Bootstrap cap (BOOT) . -0.3 V to 14 V Sense voltage (VSENSE) . -0.3 V to 3.3 V Comp
11、ensation (COMP) . -0.3 V to 3.3 V Power good fault (PWRGD) . -0.3 V to 5.5 V Slow start and tracking (SS/TR) -0.3 V to 5.5 V Synchronization (SYNC) -0.3 V to 7 V Output voltage (VOUT) : BOOT-PH 0 V to 7 V Switch node (PH) . -1 V to 7 VPH 10 ns transient . -3 V to 7 V Output current . 6 A Differentia
12、l voltage (Vdiff), GND to exposed thermal pad -0.2 V to 0.2 V Source current: High side switch current limit (between VINand PH) . 7.8 A Low side switch current limit (between GND and PH) . 6 A Sink current: COMP 200 A PWRGD . -0.1 mA to 5 mA Electrostatic discharge (ESD): Human body model (HBM) 1 k
13、V Charged device model (CDM) . 1 kV Operating junction temperature (TJ) -55C to +150C Storage temperature . -65C to +150C Thermal resistance, junction to case (JC) with thermal pad 0.52C/W 2/ 3/ 4/ Thermal resistance, junction to board (JB) 43.1C/W 2/ 3/ 4/ Thermal impedance, junction to ambient (JA
14、) . 39.9C/W 2/ 3/ 4/ 1.4 Recommended operating conditions. Input voltage (VIN) . 3 V to 6.3 V Power input voltage (PVIN) 1.6 V to 6.3 V Operating ambient temperature (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at t
15、he maximum levels may degrade performance and affect reliability. 2/ Maximum power dissipation may be limited by overcurrent protection. 3/ Power rating at a specific ambient temperature (TA) should be determined with a junction temperature (TJ) of 150C. This is the point where distortion starts to
16、substantially increases. Thermal management of the printed circuit board (PCB) should strive to keep the junction temperature at or below 150C for best performance and long term reliability. 4/ Test board conditions: a. 2.5 inches x 2.5 inches, four layers, thickness: 0.062 inch. b. Two ounces coppe
17、r traces located on the top of the PCB. c. Two ounces copper ground planes on the two internal layers and bottom layer. d. Four 0.010 inch thermal vias located under the device package. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCI
18、RCUIT DRAWING SIZE A 5962-10221 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features. Maximum total dose available (effective dose rate = 0.1 rad(Si)/s) . 100 krads(Si) 5/ 6/ The manufacturer supplying RHA device on this drawing has pe
19、rformed characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) in accordance with MIL-STD-883, method 1019, paragraph 3.13.1.1. Therefore these parts may be considered ELDRS free at a dose level of 100 krads (Si). 2. APPLICABLE DOCUMENTS 2.1 Gov
20、ernment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFIC
21、ATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard
22、 Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of
23、 a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 5/ The manufacturer supplying device type 01 has per
24、formed characterization testing in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1 and the parts exhibited no enhanced low dose rate sensitivity (ELDRS) at a dose level of 100 krads(Si). The radiation end point limits for the noted parameters are guaranteed only for the conditions as spec
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