DLA SMD-5962-01516 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 3 3 V 8K X 8-BIT PROM MONOLITHIC SILICON《单片硅辐射硬化数字存储器微电路 CMOS 3 3V 8K X 8-BIT PROM》.pdf

《DLA SMD-5962-01516 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 3 3 V 8K X 8-BIT PROM MONOLITHIC SILICON《单片硅辐射硬化数字存储器微电路 CMOS 3 3V 8K X 8-BIT PROM》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-01516 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 3 3 V 8K X 8-BIT PROM MONOLITHIC SILICON《单片硅辐射硬化数字存储器微电路 CMOS 3 3V 8K X 8-BIT PROM》.pdf（18页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Corrected TABLE I parameter VOL2, changed TTL indications to CMOS. ksr 01-05-15 Raymon Monnin B Boilerplate update and part of five year review. tcr 07-02-07 Joseph Rodenbeck REV SHET REV B B B SHEET 15 16 17 REV STATUS REV B B B B B B B B B B B

2、B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Raymond Monnin DEPARTMEN

3、TS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 01 - 03 - 26 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, RADIATION-HARDENED, 3.3 V, 8K X 8-BIT PROM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-01516 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E256-07 Provided by

4、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01516 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assura

5、nce class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels

6、are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 01516 01 Q X A | | | | | | | | | | | | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1

7、.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the app

8、ropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 28F64LVC 3.3 V 8K X 8-bit Radiation hardened PROM 55 ns 1.2.3 Device class designator. The dev

9、ice class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or

10、V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line package Y CDFP3-F28 28 Flat Pack 1.2.5 Lead finish. The lead finis

11、h is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01516 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OH

12、IO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range .-0.3 V dc to +7.0 V dc Voltage on any pin with respect to ground .-0.5 V dc to VDD+0.5 V dc Maximum power dissipation (PD) .1.5 W Lead temperature (soldering, 10 seconds maximum) +260C

13、 Thermal resistance, junction-to-case (JC) .See MIL-STD-1835 Junction temperature (TJ).+175C Storage temperature range -65C to +150C Temperature under bias.-55C to +125C 1.4 Recommended operating conditions. Supply voltage (VDD) +3.0 V dc to +3.6 V dc Ground voltage (GND) .0.0 V dc Input high voltag

14、e (VIH).0.7 VDDminimum to VDDInput Low voltage (VIL) .0.0 V dc to +0.25 VDDmaximum Case operating temperature range (TC) .-55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50-300 rad/s) 1.0 MRads(Si) Single event phenomenon (SEP) effective linear energy threshold (LET)

15、with no upsets 128 MEV-cm2/mg Neutron irradiation 1 x 1014neutrons/cm22/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the i

16、ssues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Stan

17、dard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or fro

18、m the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Guaranteed, bu

19、t not tested Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01516 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The

20、following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measur

21、ement of Single Event Phenomena (SEP) induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES

22、 ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organ

23、izations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes prec

24、edence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or

25、 as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B

26、devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The ca

27、se outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table(s). 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as spe

28、cified on figure 2. When required in screening (see 4.2 herein) or conformance inspection, groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed or at least 25 percent of the total numb

29、er of cells to any altered item drawing 3.2.3.2 Programmed devices. The truth table or test vectors for programmed devices shall be as specified by an attached altered item drawing. 3.2.4 Switching test circuit and waveforms. The switching test circuit and waveforms diagram shall be as specified on

30、figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 5. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter l

31、imits are as specified in table I and shall apply over the full case operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01516 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

32、 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In

33、 addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked

34、. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-3853

35、5. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see

36、 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this

37、 drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device cl

38、asses Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving dev

39、ices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore

40、 documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.11 Processing options. Since the device is c

41、apable of being programmed by either the manufacturer or the user to result in a wide variety of configurations; two processing options are provided for selection in the contract, using an altered item drawing. 3.11.1 Unprogrammed device delivered to the user. All testing shall be verified through g

42、roup A testing as defined in 4.4.1 and table IIA. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 3.11.2 Manufacturer-programmed device delivered to the user. All testing requirements and quality assurance provisions herein, incl

43、uding the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacture

44、rs Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall b

45、e in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.

46、 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of table IIA herein. Provided by IHSNot for ResaleNo reproduction or netwo

47、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-01516 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 b. The test circuit shall be maintained by the manufacturer under document revision level control and s

48、hall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (1) Dynamic burn-in for device class M (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein). c. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperat