DLA SMD-5962-01513-2001 MICROCIRCUIT DIGITAL-LINEAR 256 OUTPUT THIN FILM TRANSISTOR (TFT) GATE DRIVER MONOLITHIC SILICON《单片硅数字线性微电路 256输出薄膜晶体管(TFT)门驱动器》.pdf
《DLA SMD-5962-01513-2001 MICROCIRCUIT DIGITAL-LINEAR 256 OUTPUT THIN FILM TRANSISTOR (TFT) GATE DRIVER MONOLITHIC SILICON《单片硅数字线性微电路 256输出薄膜晶体管(TFT)门驱动器》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-01513-2001 MICROCIRCUIT DIGITAL-LINEAR 256 OUTPUT THIN FILM TRANSISTOR (TFT) GATE DRIVER MONOLITHIC SILICON《单片硅数字线性微电路 256输出薄膜晶体管(TFT)门驱动器》.pdf(14页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDREVSHEETREVSHEETREV STATUS REVOF SHETS SHET 1234567891011213PMIC N/A PREPARED BY RICK OFFICERDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYRAJESH PITHADIACOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE B
2、Y ALLDEPARTMENTSAND AGENCIES OF THEAPPROVED BYRAYMOND MONNIN MICROCIRCUIT, DIGITAL-LINEAR, 256 OUTPUT,THIN FILM TRANSISTOR (TFT) GATE DRIVER,MONOLITHIC SILICONDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE01-05-29AMSC N/AREVISION LEVEL SIZEACAGE CODE672685962-01513SHEET1 OF 13DSCC FORM 2233APR 97 5962-E
3、368-01DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-01513DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVEL SH
4、EET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). In addition for TAB devices, the requirements of Appendix F “General provision forTAB microcircuits” sha
5、ll be met. A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.1.2 PIN. The PIN is as shown in the following example:5962 - 01513 01 Q X X Fe
6、deral RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare mark
7、ed with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows
8、:Device type Generic number Circuit function01 MPT57605 256 output, thin film transistor (TFT)gate driver1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certifi
9、cation to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix A and appendix F of MIL-PRF-38535.Q or V Certification and qualification to MIL-PRF-38535 and appendix F of MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are a
10、s designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleX See manufacturers 268 Environmentally protected tape automatedaltered item drawing bond1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 and appendix F for device classes Q an
11、d V or MIL-PRF-38535, appendix A and appendix F for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-01513DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVEL SHEET3DSCC FORM 2234AP
12、R 971.3 Absolute maximum ratings. 1/ 2/ 3/ 4/Power supply voltage:VDD-0.3 V to +7.0 VVEE-20.0 V to +0.3 VVLVEE 0.3 V to VEE+ 7.0 VVCOM VEE-0.3 V to 40.0 VInput voltage (VIN). -0.3 V to VDD+ 0.3 VStorage temperature range . -55C to +125C1.4 Recommended operating conditions. 2/Power supply voltage:VDD
13、+3.0 V to +3.6 VVCOM. +10 V to +25 VVEE-15 V to -5 VVL VEE0 V to 6.0 VVCOM VEE17 V to 35 VOperating frequency (fCPV) 100 kHzOperating ambient temperature range (TA) . -55C to +125C2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, a
14、nd handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEP
15、ARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.1/ Stresses above the absolute maximum rating may cause
16、permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ VSS= 0 V.3/ Power up in the following order: VDD VEE input signal VCOM. Power down by reversing the sequence.4/ Unless otherwise specified, all voltages are with reference to VSS
17、.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-01513DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVEL SHEET4DSCC FORM 2234APR 97HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard
18、Microcircuit Drawings.MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In
19、the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The ind
20、ividual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535, and appendix F MIL-PRF-38535 “General provisions for TAB microcircuits”, and as specified herein or asmodified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shal
21、l not affect theform, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and Appendix F as specified herein.3.2 Design, construction, and physical dimensions. The design, co
22、nstruction, and physical dimensions shall be as specifiedin MIL-PRF-38535, appendix F of MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A,appendix F and herein for device class M.3.2.1 Pin functions. The pin functions shall be as specified on figure 1.3.2.2 Device ope
23、ration. The device operation shall be as specified on figure 2.3.2.3 Block diagram. The block diagram shall be as specified on figure 3.3.2.4 Timing diagram. The timing diagram shall be as specified on figure 4.3.3 AID requirements. All AIDs written against this SMD shall be sent to DSCC-VA. The fol
24、lowing items shall be provided tothe device manufacturer by the customer as part of an AID.3.3.1 Case outline. The case outline shall be in accordance with the manufacturers altered item drawing.3.3.2 Terminal connections and pin assignments.3.3.3 Package type (see 1.2.4).3.3.4 Functional descriptio
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