DLA MIL-PRF-19500 652 C-2013 SEMICONDUCTOR DEVICE TRANSISTOR HIGH VOLTAGE FIELD EFFECT N-CHANNEL SILICON TYPE 2N7387 AND 2N7387U1 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/652C 6 December 2013 SUPERSEDING MIL-PRF-19500/652B 21 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all

2、Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a high voltage N-channel, enhancement-mode, p

3、ower MOSFET transistor, with avalanche energy maximum ratings (EAS) and maximum avalanche current (IAS). Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-254AA), and figure 2 for surface mount (U1

4、). 1.3 Maximum ratings. (TA= +25C, unless otherwise specified). Type PT(1) TC= +25C PTTA= +25C RJCV(BR)DSSmin VGS= 0 V dc ID= 1.0 mA dc ID1(2) TC= +25C ID2(2) TC= +100C ISIDM(3) TJand TSTGW W C/W V dc A dc A dc A dc A(pk) C 2N7387, 2N7387U1 125 4 1.0 1,000 3 1.9 3 9 -55 to +150 See notes on next pag

5、e. AMSC/NA FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this

6、 address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this document shall be completed by 6 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

7、HS-,-,-MIL-PRF-19500/652C 2 1.3 Maximum ratings. - Continued. Type IAR(2) VGSEASrDS(on)max (4) VGS= 10V dc; ID= 1.9A TJ= +25C TJ= +150C A V dc mj ohms ohms 2N7387, 2N7387U1 3 20 245 4.00 9.60 (1) Derate linearly 1.0 W/C for TC +25C (2) ID = sqrt TJ(max)- TC/RJXx (Rds(on)at TJ(max) (3) IDM= 3*ID1as c

8、alculated in footnote (2). (4) Pulsed (see 4.5.1). 1.4 Primary electrical characteristics. TC = +25C (unless otherwise specified). V(BR)DSSmin VGS(th)1IDSS1max rDS(on)(1) Type VGS= 0 V dc ID= 1.0 mA dc VDS VGSID= 0.25 mA dc VGS= 0 V dc VDS= 800 V dc VGS= 10 V dc ID= 1.9 A dcV dc V dc A dc ohms min m

9、ax 2N7387, 2N7387U1 1,000 2.0 4.0 25 4.00 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended

10、 for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Gover

11、nment documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT O

12、F DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/assist.dla.mil or from the Standar

13、dization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, superse

14、des applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/652C 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Prot

15、rusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for (TO-254AA) Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 1

16、3.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 3, 4 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate TO-254 Provided

17、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/652C 4 Q1 (2X)BWBLCH LW1LL1LL2(2X)CLCLLS2LS1LW2(2X)Q2CLLH(3X)12 3-C-0.10 (0.004)-B-A-0.36 (0.014) CM A B MM3 SURFACESSymbol Dimensions Inches Millimeters Min Max Min Max BL .620 .630 15.74 16.00 B

18、W .445 .455 11.30 11.55 CH .129 .139 3.27 3.53 LH .010 .020 0.25 0.51 LW1 .370 .380 9.39 9.65 LW2 .135 .145 3.43 3.68 LL1 .410 .420 10.41 10.66 LL2 .152 .162 3.86 4.11 LS1 .200 .220 5.08 5.59 LS2 .100 .110 2.54 2.79 Q1 .035 0.89 Q2 .050 1.27 TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimension

19、s are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions for 2N7387U1 (surface mount). U1 1 2 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without licens

20、e from IHS-,-,-MIL-PRF-19500/652C 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the q

21、ualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions.

22、 The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 and 2 herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent Al203(ceramic). Examples of such construction techniques are me

23、tallized ceramic eyelets or ceramic walled packages. 3.4.1 Lead material, finish, and formation. Lead material shall be Kovar or Alloy 52; a copper core or plated core is permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead form

24、ation, material or finish is desired, it shall be specified in the acquisition document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table II of MIL-PRF-19500 and 100 percent dc testing in accordance wit

25、h table I, subgroup 2 herein. 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Hand

26、ling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended. a. Devices should be handled on benches with conductive and grounded surfaces. b. Ground test equipment, tools, and personne

27、l handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised, during test and troubleshooting, to apply not m

28、ore than maximum rated voltage to any lead. h. Gate must be terminated to source. R 100K, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, an

29、d table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or

30、 appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/652C 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Scr

31、eening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500. 4.

32、2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not p

33、erformed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/652C 7 * 4.3 Screening (JANTX, JANTXV, and JANS levels). Screening

34、 shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS l

35、evel JANTX and JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, (see 4.3.2) Method 3470 of MIL-STD-750, (see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, (see 4.3.3) Method 3161 of MIL-STD-750, (see 4.3.3) 9 Subgroup 2 of table I herein, IDSS1,

36、 IGSSF1, IGSSR1Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1. Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 per

37、cent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(TH)1. Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, condition A Method 1042 of MIL-STD-750, condition A 13 Subgroups 2 and 3 of tabl

38、e I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initia

39、l value. Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 25 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(

40、TH)1 = 20 percent of initial value. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1, a

41、nd IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. * * Provided by IHSNot for Resale

42、No reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/652C 8 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.2 Single pulse unclamped inductive switching. a. Peak current, IAS3 A. b. Peak gate voltage, VGS10 V. c. Gate to source resistor, RGS25

43、 Rg 200 ohms. d. Initial case temperature +25C, +10C, -5C. e. Inductance, L 51.72 mH minimum. f. Number of pulses to be applied 1 pulse minimum. g. Supply voltage (VDD) 50 V. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750

44、using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). (See figure 3 herein.) Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. * 4.3.4 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of appl

45、ication of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4

46、.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with

47、table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be i

48、n accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/652C 9 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B3 1051 Test condition G. B4 1042 Intermittent operation life, condition D. No heat sink or forced-air cooling on the device shall be permitted during the on cycle; ton= 30 seconds minimum. B5 1042 A separate sample may be pulled for each test. Condition B, VGS= rated, T