DLA MIL-PRF-19500 613 E-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPE 2N7373 JAN JANTX JANTXV JANS AND JANSM D P L R F G AND H.pdf

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1、 MIL-PRF-19500/613E 18 December 2013 SUPERSEDING MIL-PRF-19500/613D 21 September 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, JANS AND JANSM, D, P, L, R, F, G, AND H This specification is approved for use by all Depart

2、ments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-spe

3、ed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance level. RHA level designators “M“, “D“, “P“, “L“, “R“, “F“, “G“, and “H“ are

4、 appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (TO-254AA). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT (1) TA= +25C PT (2) TC= +25C RJA RJC VCBOVCEOVEBOICIC(3) TJand TSTGW W C/W C/W V dc V dc V dc A

5、 dc A dc C 2N7373 4 58 43.75 3 100 80 5.0 5.0 10 -65 to +200 (1) Derate linearly 22.8 mW/C for TA +25C. (2) Derate linearly 331 mW/C for TC +25C. (3) This value applies for PW 8.3 ms, duty cycle 1percent. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be a

6、ddressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. The documentation

7、 and process conversion measures necessary to comply with this document shall be completed by 18 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/613E 2 1.4 Primary electrical characteristics. Limit hFE2|hfe| VBE(SAT)2 (1)

8、 VCE(SAT)2 (1) Cobo VCE= 5.0 V dc IC= 2.5 A dc VCE= 5.0 V dc IC= 500 mA dc f = 10 MHz IC= 5.0 A dc IB = 500 mA dc IC= 5.0 A dc IB = 500 mA dc VCB= 10 V dc IE= 0 A dc f = 1 MHz V dc V dc pF Min 70 7.0 Max 200 2.2 1.5 250 (1) Pulse (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed

9、 in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, docum

10、ent users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks for

11、m a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

12、MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quickseaarch.dla.mil or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Un

13、less otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been

14、 obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/613E 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, dia

15、meters are equivalent to x symbology. FIGURE 1. Dimensions and configuration (TO-254AA). Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78

16、 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base Term 2 Collector Term 3 Emitter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/613E 4 3. REQUIREMENTS 3.1 General. The indi

17、vidual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers

18、list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as sp

19、ecified on figure 1. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. 3.4.1 Lead finish and formation. Lea

20、d finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermeti

21、c seal in accordance with table E-IV, screen 14, of MIL-PRF-19500. 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation h

22、ardened designator “M“, “D“, “P“, “L“, “R“, “F“, “G“, or “H“ shall immediately precede (or replace) the device “2N“ identifier (depending upon degree of abbreviation required). 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics a

23、re as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will

24、affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualifica

25、tion inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request th

26、e performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

27、 IHS-,-,-MIL-PRF-19500/613E 5 * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500, table E-IV, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein

28、shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurements JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 ICES1and hFE2Not applicable 11 Subgroup 2 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 10

29、0 nA dc, whichever is greater. hFE2= 20 percent of initial value. ICES1and hFE212 t = 240 hours t = 160 hours minimum 13 Subgroups 2 and 3 of table I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 100 nA dc, whichever is greater. hFE2= 20 percent of initial value. Subgroup 2 of table

30、I herein; ICES1and hFE2; ICES1= 100 percent of initial value or 100 nA dc, whichever is greater. hFE2= 20 percent of initial value. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3), Endpoints: Subgroup 2 of table I herein. For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3)

31、, Endpoints: Subgroup 2 of table I herein. * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= 187.5 12.5C, VCE 20 V dc, TA 10

32、0C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4

33、 herein. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/613E 6 * 4.3.3 Dielectric withstanding voltage. a. Magnitude of test voltage.900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of te

34、st voltage.All leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conformance inspection shall be in accordanc

35、e with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup t

36、esting in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E- VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB= 10 V dc minimu

37、m. B5 1027 See 4.5.3. 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 VCB= 10 V dc minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-

38、VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with the applicable steps and table I, subgroup 2 herein. 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Tense: test condition A; weight 10 pounds 5 ounces (4.54 Kg 142 g);

39、time 15 seconds. Bend strength: test condition F; bending stress 2 pounds, time 15 seconds. C5 3131 See 4.3.2, RJC= 3.0C/W. C6 1037 VCB= 10 V dc minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/613E 7 4.4.4 Group D inspection. C

40、onformance inspection for hardness assured JANS types shall include the group D tests specified in table II herein. These tests shall be performed as required in accordance with MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for neutron fluence as

41、 applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance with MIL-PRF-19500 and related documents. Alternate package options may also be substituted fo

42、r the testing provided there is no adverse effect to the fluence profile. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and table III herein. Electrical measurements (end-points) shall b

43、e in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Inspection conditions.

44、Unless otherwise specified in MIL-PRF-19500 or herein, all inspections shall be conducted at a case temperature (TC) of +25C 3C. 4.5.3 Group B accelerated life test. This test shall be conducted using one of the two options listed herein (4.5.3.a and 4.5.3.b) with the following conditions applying t

45、o all options: VCB= 20 V minimum dc; 96 hours minimum; TJ= +275C. a. PT= 2.5; PTadjusted to give a lot average of TJ= +275C with TA= +125C 25C. b. TA= +25C 3C with PTadjusted to give a lot average of TJ= +275C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

46、 IHS-,-,-MIL-PRF-19500/613E 8 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJXC/W Collector to emitter breakdown voltage 3011 Bias condition D; IC=

47、100 mA dc, IB= 0, pulsed (see. 4.5.1) V(BR)CEO80 V dc Collector to emitter cutoff current 3041 Bias condition C; VCE = 60 V dc; VBE = 0 ICES11.0 A dc Collector to emitter cutoff current 3041 Bias condition C; VCE = 100 V dc; VBE = 0 ICES2 1.0 mA dc Collector to emitter cutoff current 3041 Bias condi

48、tion D; VCE = 40 V dc; IB = 0 ICEO50 A dc Emitter to base cutoff current 3061 Bias condition D; VEB = 4 dc; IC = 0 IEBO11.0 A dc Emitter to base cutoff current 3061 Bias condition D; VEB = 5.5 dc; IC = 0 IEBO21.0 mA dc Forward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 50 mA dc; pulsed (see 4.5.1) hFE150 Forward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 2.5 A dc; pulsed (see 4.5.1) hFE270 200 Forward-current transfer ratio 3076 VCE= 5.0 V dc; IC= 5.0 A dc; pulsed (see 4.5.1) hFE340 Base to emitter non-saturated voltage 3066 Test condition B; VCE= 5.0 V dc, IC= 2.5