DLA SMD-5962-96736-1996 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HIGH SPEED 8-BIT BIDIRECTIONAL CMOS TTL INTERFACE LEVEL CONVERTER MONOLITHIC SILICON《的互补金属氧化物半导体 硅单片电路数字微电路8-BI.pdf

《DLA SMD-5962-96736-1996 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HIGH SPEED 8-BIT BIDIRECTIONAL CMOS TTL INTERFACE LEVEL CONVERTER MONOLITHIC SILICON《的互补金属氧化物半导体 硅单片电路数字微电路8-BI.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96736-1996 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS HIGH SPEED 8-BIT BIDIRECTIONAL CMOS TTL INTERFACE LEVEL CONVERTER MONOLITHIC SILICON《的互补金属氧化物半导体 硅单片电路数字微电路8-BI.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、SMD-5962-96736 W 9999996 0084223 969 REVISIONS LTR DESCRIPTION DATE (YRMO-DA) APPROVED PREPAREDBY Thomas M. Hess CHECKED BY Thomas M. Hess APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 96-01 -1 6 REVISION LEVEL REV I I I DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGIT

2、AL, RADIATION HARDENED, INTERFACE LEVEL CONVERTER, MONOLITHIC SILICON CMOS, HIGH SPEED 8-BIT BIDIRECTIONAL CMOSATL 5962-96736 SIZE CAGE CODE SHEET 1 OF 19 SHEET REV STATUS OF SHEETS PMIC NIA STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPART

3、MENT OF DEFENSE AMSC NIA 1ECC FORM 193 JUL 94 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E239-96 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-9b73b W 9999996 0084224 8T5 SIZE STANDARD A MICROCIR

4、CUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 REVISION LEVEL 1. SCOPE 5962-96736 SHEET 2 1.1 m. This drawing forms a part of a one part - one part nvnber docunentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes and

5、M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, IIProvisions for the use o

6、f MIL-STD-883 in conjunction with compliant non-JAN devicesBB. Uhen available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. I 1.2 m. The PIN shall be as shown in the following example: 96736 f f Federa 1 R HA Device Device Case Lead stock class designator type c 1

7、ass outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) li LA (see 1.2.3) w Drawing nunber 1.2.1 RHA desimator. Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA Levels and shall be marked with the appropriate RHA designator. MIL-1

8、-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-1 indicates a non-RHA device. Device classes Q and V RHA marked devices shall meet the 1.2.2 pevice tvrre(s1 . The device type(s) shall identify the circuit function as follows: pevi ce tvDe Generic number

9、Ci rcui t function o1 GP511 Radiation hardened CMOS/SOS high speed 8-bit directional CMOS/TTL interface level converter 1.2.3 pevice class desimator. The device class designator shall be a single letter identifying the product assurance level as follows: evice class Device reauirements docunenta tio

10、n I9 M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or V Certificat i on and qual if icat ion to MIL- 1-38535 1.2.4 Case outline(s). The case outline(s1 shall be as designated in MIL-STD-1835 and as follows: outline letter

11、Descriotive desimator Termina 1% Package stvle X CDFP3-FZ8 28 Flatpack package 1.2.5 Lead finish. The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-1-38535 for classes Q and V. designation is for use in specifications when lead finishes A, B, and C are consider

12、ed acceptable and interchangeable Finish letter BBXBB shall not be marked on the microcircuit or its packaging. The “XIB DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-96736 9997976 0084225 731 W MIL I TARY MIL-STD-88

13、3 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN 1.3 pbsolute maximum ratinss .I/ supply voltage (VCC) - - - - - - - - - - - - - - - - - - - - - - Supply voltage (VD,) - - - - - - - - - - - - - - - - - -

14、 - Input voltage range: Data inputs, CMOS to TTL - - - - - - - - - - - - - - - - - - - Data inputs, TTL to CMOS - - - - - - - - - - - - - - - - - - - Storage temperature range (TSTG) - - - - - - - - - - - - - - - - Junction temperature (TJ) - - - - - - - - - - - - - - - - - - - Lead temperature (sol

15、dering 10 seconds) (TS) - - - - - - - - - - Thermal resistance junction-to-case (JC): Case x - - - - - - - - - - - - - - - - - - - - Thermal resistance junction-to-ambient (8JA): Maximun package power dissipation TA = +125C (PD): 1/ Caseoutlinex -_- - - - - - Case x - - - - - - - - - - - - - - - - -

16、 - - - - - - MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMDIS). 1 HANDBOOK -0.5 V to VDD -0.5 V dc to 11 V dc STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 I -0.5 V to VDD + 0.5 V -0.5 V to V + 0.5 V -65.C to +1!% +175C +265c 1 OC/U 65WU 0.77 u 4

17、.5 V dc to +5.5 V dc or VDD 4.5 V dc to +10.5 V dc -55C to +125C O V to 0.2 x VDD VDD to 0.8 x V O V to 0.5 V 8 Vcc to 2.3 V I/ 10 k Rads(S1) 10“ RAD(SI)/sec 4/ 100 MEV/(rng/cm2) 4/ 2. APPLICABLE DOCUMENTS 2.1 Government specification. standards, bulletin, and handbook. Unless otherwise specified, t

18、he following specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SPECIFICATION MI LITARY MIL-1-38535 - Integrat

19、ed Circuits, Manufacturing, General Specification for. STANDARDS MI LI TARY MIL-HDBK-780 - Standardized Military Drawings. - 1/ a Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliabili

20、ty. If device power exceeds package dissipation capability provide heat sinking or derate linearly (the derating is based on eJA) at the following rate, case X = 15.4 W/“C Guaranteed by process or design, not tested. 5/ VDD = 10 v, vcc = 5.0 v. 4/ 5962-96736 REVISION LEVEL SHEET DESC FORM 193A JUL 9

21、4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96736 9999996 0084226 678 STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 SIZE A 5962-96736 REVISION LEVEL SHEET 4 DESC FORM 193A JUL 94 Provided by IHSNot

22、for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96736 7779%7b 0084227 504 Limits Unit Supply current Input current in CMOS inputs to TTL outputs Output current high CMOS inputs to TTL outputs Output current low (CMOS inputs to TTL outputs) TTL three-state outp

23、ut leakage current (CMOS inputs to TTL outputs) Icc Vcc = 5.5 VI VDD = 10.5 V Vcc 5.5 V, VDD = 10.5 V 1 ,Z13 IIN VIN = O or VDD 1 A3 Vcc = 4.5 V, VDD = 9.5 V vOH = = 0 V I12J vcc = 4.5 VI VDD = 9.5 v IOL VOL = 0.4 V 1,213 IwT Enable = 1, VIlo = O 1,2,3 Vcc = 5.5 VI VDD = 10.5 V TTL three-state outpu

24、t leakage current (CMOS inputs to TTL outputs) Input current low (TTL inputs to CMOS outputs) input current high (TTL inputs to CMOS outputs) IWT IIL IIH Vcc = 5.5 V, VDD = 10.5 V Enable = O 1,2,3 Vcc = 5.5 V, V = 10.5 V VIL = O V, EnaBe = I 11213 input current in (TTL inputs to CMOS outputs) Fc f 5

25、.5 VI VDD = 10.5 V IIN IN - O or Vcc, Enable = O Output,current low (TTL inputs to CMOS outputs) CMOS three-state output leakage current, (TTL Inputs to CMOS outputs vcc = 4.5 v, VDD = 9.5 v IoL VOL 0.5 VI VIH = 10 V 1,213 Vcc = 5.5 V, VDD = 10.5 V IwT Vo = O V or Voo 1,2,3 TABLE I. aectrical De rfo

26、rmance characteristics. I I I Test Conditions 1/ -55C s TA s +125C unless otherwise specified Group A subgroups ievice type Min Supply current Al 1 - Al 1 = 5.5 V, VDD = 10.5 V Enable = 1, VIlo = O Vcc = 5.5 V, VDD = 10.5 V II Enable = O Al I - 60 -4.2 I mA Al 1 - Al 1 Al 1 4.2 500 Al 1 - 60 500 ALL

27、 - ALL AL 1 - Al 1 Al 1 - Al 1 - 350 - 60 -2.5 -60 1 vcc = 4.5 v, VDD = 9.5 v :; VOH = 9 v, VIL = o v Output current high (TTL 1 OH inputs to CMOS outputs) Y See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 5962-96736 DESC FORM 193A JU

28、L 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96736 9999996 0084228 440 Test Input Current, data flow (CMOS input to TTL out) Input Current, data flow (TTL inputs to CMOS out) Input Current, data flow (TTL inputs to CMOS out) Input Cu

29、rrent, data flow (TTL inputs to CMOS out) Input Current, enable and disable inputs Input Current, enable and disable inputs Input Current, enable and disable inputs Input high voltage (CMOS in to TTL out) Input ow voltage (CMOS in to TTL out) Input high voltage (TTL in to CMOS out) Input low voltage

30、 (TTL Dynamic device current from in to CMOS out) VDD SUPP 1 Y Dynamic device current from vcc SUPPLY )evi ce I Limits Unit TABLE 1. - Continued. symbo I Conditions 1/ Group A -55C S TA S +125C unless otherwise specified subgroups IIN VIN = O V or VD 1,2,3 VDD = 10.5 V, Icc = 5.5 V IIL VIL = O V Ena

31、ble = Vc 1,2,3 VDD 10.5 VI Vcc = E.5 V IIH VIH 2.3 V Enable = V 1,2,3 IIN VIN = O V or Vcc 12,3 IIL VIL = o v 1,2,3 VDD = 10.5 VI Vcc = 5C5 V Enable = Vss VDD 10.5 V, Vcc = 5.5 V VDD 10.5 V, Vcc = 5.5 V IIH VIH = 2.3 V 1,2,3 VDD = 10.5 VI Vcc = 5.5 V IIH VIN = 10.5 V 1 ,2,3 VDD = 10.5 VI Vcc = 5.5 V

32、 VIHC vcc = 5.0 v 1 ,2,3 VDD = 10 V VILc Vcc = 5.0 V 1,2,3 VIHT Vcc = 5.0 V 7,2,3 VILT Vcc = 5.0 V 12.3 IDD DYN F - = 1 MHz 5-5 1,2,3 Icc DYN f 1 MHz 1,2,3 VDD = 10 v VDD = 10 v VDD = 10 V VDD 10.5 V vcc 5.5 v VoD = 10.5 V STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO

33、45444 All 1 SIZE A 5962-96736 - REVISION LEVEL SHEET 6 All I 8 + -I Max J- 6o Id Id I 20 1 In4 300 1 pA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-5962-9b736 999999b 0084229 387 W TABLE I. Electr ical oe rformance character istics - Continu

34、ed. Limits Min Max 15 15 15 75 75 55 Unit pF pF pF ns ns ns Symbol CIN Conditions L/ -55C sTA L +125C unless otherwise specified VDD = open See 4.4.l.c, f 1 MHz 1 CMOS-in to TTL-out tpLH propagation delay CMOS-in to TTL-out tpHL propagation delay ENABLE-in to CMOS-out tpHZ propagation delay see figu

35、re 5, VDD = 9.5 V vcc = 4.5 v vcc = 4.5 v vcc = 4.5 v see figure 5, VDD 9.5 V see figure 5, VDD 9.5 V SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 5962-96736 SHEET 7 Test Group A subgroups Input capacitance 4 Al 1 - Al 1 - Al 1 Voo = open V

36、DD open Output capacitance I/O capacitance Functional tests 7,8 See 4.4.lb, f = 1 MHz VDD = 10 VI Vcc = 5.0 V TTL-in to CMOS-out propagation delay 1 tpHL see figure 5, VDD = 9.5 v vcc = 4.5 v 9, IO, 11 Al 1 I 1 9,10,11 Al 1 1 tpLH Isee figure 5, vDD = 9.5 v vcc = 4.5 v TTL-in to CMOS-out propagation

37、 delay Al I - Al 1 - ALL - Al 1 - Al 1 - AL 1 9,10,11 9,10,11 9,10,11 ENABLE-in to CMOS-out propagation delay tPLZ see figure 5, VDD = 9.5 V vcc = 4.5 v 9,10,11 ENABLE-in to CMOS-out propagation delay 9,10,11 tPZH see figure 5, VDD = 9.5 V vcc = 4.5 v ENABLE-in to CMOS-out propagation delay 9,10,11

38、tPZL see figure 5, VDD = 9.5 V vcc = 4.5 v DISABLE-in to TTL-out propagation delay 9,10,11 Al 1 tPHZ see figure 5, VDD = 9.5 V vcc = 4.5 v DISABLE-in to TTL-out propagation delay 1 tpLZ JIee figure 5, VDD = 9.5 v vcc = 4.5 v 9, 10, 11 AL 1 - ALL - 9,10,11 DISABLE-in to TTL-out propagation delay 1 tp

39、ZH /Eee figure 5, vDD = 9.5 v vcc = 4.5 v See notes at end of table DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5962-96736 m 9999996 0084230 DT9 m symbo 1 TABLE 1. Electrical oe rformance character istics - Continued. C

40、onditions 1/ Group A Device -55C L Th L +125C sub r oups type unless otherwise specified I I I I STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 Test SIZE A 5962-96736 REVISION LEVEL SHEET 8 DISABLE-in to TTL-out propagation delay see figure 5, VDD = 9.5 V vcc = 4.5 v

41、 see figure 5, VDD = 9.5 V vcc = 4.5 v High TTL-in to CMOS-out I tTHL 1 transition time High TTL-in to CMOS-out see figure 5, VDD 9.5 V transition time vcc 4.5 v vcc 4.5 v High CMOS-in to TTL-out transition time 9, IO, 11 9,10,11 9,10,11 9, 10, 11 Al I Al I Al 1 AL 1 High CMOS-in to TTL-out transiti

42、on time vcc = 4.5 v Limits Unit Min 1 Max LI I/ Devices supplied to this drawing will meet all levels M, D, L, R of irradiation. However, this device is only tested at the IR level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation

43、electrical measurements for any RHA level, TA = +25C. DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9b73b 9999996 0084233 T35 Termi na 1 Terminal 8 A5 9 A6 10 A7 11 , A8 B2 12 ENABLE 26 NC 13 NC 27 61 14 I vcc I Notes

44、: 1. Pins 3 - 11 (A ) are CMOS Input/Output. 2. Pins 19 throug! 27 (BN) are TTL Input/Output FIGURE I. Terminal connections. I I I STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1 1 1 5962-96736 I SHEET REVISION LEVEL I DESC FORM 193A JUL 94 Provided by IHSNot for

45、 ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-96736 7997776 0084232 771 STANDARD I LllPDrPlDPl IIT nD4wNG JPPLY CENTER (C TTL-TO-CHOS - CONVERTER DIS M + - TTL-TO-CiOS - C ONVE R T E R + SIZE A 5962-96736 -.-.-_ -. , .- FIGURE 2. basic diasram. iviIc.cuuInc.un

46、I UN DEFENSE ELECTRONICS SC - DAYTON, OHIO 45444 I “nttio 1 KtVISIUN LtVtL DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9b73b 9c1b 0084233 808 m X 1 O I Enable I Di sable I Function I O Convert CMOS level to TTL leve

47、l 1 Convert TTL level to CMOS level 1 High impedance (2) on both CMOS and TTL sides SIZE STANDARD A MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL O = Low level 1 = High Level X = Dont care 5962-96736 SHEET 11 FIGURE 3. Truth table. Provided by IHSNot for Re

48、saleNo reproduction or networking permitted without license from IHS-,-,-SMD-5762-76736 W 9999996 0084234 744 SIZE A STAN DARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL VOO 1 HI 3 HI 5 HI 7 HI 9 LO 10 HI 11 LO It ss -E LO LO LO 6 LO 8 HI 13 5962-96736 SHEET 12 1. ALL resistors are 47kn f 10 % 2. VoD = 10 V I 0.5 V, Vss = O V, HI VDD, Low = Vss. g voo zJ-vw- LO 26 HI LO g-vm- HI g+Mr- LO HI LO g-w- HI LO HI vJ-vw- LO EJ vss HI FIGURE 4. Rad iation exwsure circuit. DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking