DLA SMD-5962-96722 REV A-2001 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE TRANSMITTER MONOLITHIC SILICON《抗辐射三重线路传播者硅单片电路线型微电路》.pdf

《DLA SMD-5962-96722 REV A-2001 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE TRANSMITTER MONOLITHIC SILICON《抗辐射三重线路传播者硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96722 REV A-2001 MICROCIRCUIT LINEAR RADIATION HARDENED TRIPLE LINE TRANSMITTER MONOLITHIC SILICON《抗辐射三重线路传播者硅单片电路线型微电路》.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Update boilerplate to reflect current requirements. -rrp 01-05-21 R. MONNINREVSHEETREVSHEETREV STATUS REV AAAAAAAAAAAOF SHETS SHET 123456789101PMIC N/A PREPARED BY Sandra RooneyDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYSandr

2、a RooneyCOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMichael A. FryeMICROCIRCUIT, LINEAR, RADIATIONHARDENED, TRIPLE LINE TRANSMITTER,MONOLITHIC SILICONAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-11-20AMSC N/AREVISION LEVEL

3、ASIZEACAGE CODE672685962-96722SHEET1 OF 11DSCC FORM 2233APR 97 5962-E424-01DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96722DEF

4、ENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead

5、finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 R 96722 01 V X CFederalstock classdesignatorRHAdesignator(see 1.2.

6、1)Devicetype(see 1.2.2)DeviceclassdesignatorCaseoutline(see 1.2.4)Leadfinish(see 1.2.5) / (see 1.2.3)/Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked

7、 devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 HS245RH Radiation

8、hardened DI triple linetransmitter1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class lev

9、el B microcircuits in accordance with MIL-PRF-38535, appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleC CDIP2-T14 14 Dual-in-lineX

10、CDFP3-F14 14 Flat package1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA59

11、62-96722DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/Supply voltage . -0.5 V dc to +10 V dcOutput voltage . -30 V with respect to VCCInput voltage -0.5 V dc to +10 V dcStorage temperature range . -65G01C to +150G01CMa

12、ximum package power dissipation at TA = +125G01C (PD):Case outline C 0.68 W 2/Case outline X 0.43 W 2/Thermal resistance, junction-to-case (G02JC):Case outline C 24G01C/WCase outline X 30G01C/WThermal resistance, junction-to-ambient (G02JA):Case outline C 74G01C/WCase outline X 116G01C/WLead tempera

13、ture (soldering, 10 seconds) +275G01CJunction temperature (TJ) +175G01C1.4 Recommended operating conditions.Operating voltage range +4.5 V dc to +5.5 V dcAmbient operating temperature range (TA) -55G01C to +125G01C1.5 Radiation features:Maximum total dose available (dose rate = 50 300 Krad/s) 2 x 10

14、5Rads (Si) Dose rate upset 1 x 109Rads (Si)/sDose rate latch-up None 3/Neutron . 5 x 1012N/cm22. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwi

15、se specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specific

16、ation for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade pe

17、rformance and affect reliability.2/ If device power exceeds package dissipation capacity, provide heat sinking or derate linearly (the derating is based on G02JA)at the following rates:Case outline C . 13.5 mW/G01CCase outline X . 8.6 mW/G01C3/ Guaranteed by process or design, not tested.Provided by

18、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96722DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET4DSCC FORM 2234APR 97HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit

19、 Drawings.MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of

20、 a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item

21、 requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requi

22、rements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device cl

23、asses Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.3 Load circuit and switching waveform. The load circ

24、uit and switching waveform shall be as specified on figure 2.3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be as specified in table III.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, theelectrical performan

25、ce characteristics and postirradiation parameter limits are as specified in table I and shall apply over the fullambient operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electricaltests for each subgroup

26、 are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the o

27、ption of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certificati

28、on/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compli

29、ance shall be required from a QML-38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 h

30、erein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38

31、535, appendix A and herein.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or fordevice class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.Provided by IHSNot for ResaleNo

32、 reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96722DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET5DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.Test SymbolConditions 1/ -55G01C G03 TA G03 +1

33、25G01Cunless otherwise specifiedGroup AsubgroupsDevicetypeLimits UnitMin MaxInput low current IIL VCC = 5.5 V 2/ 1,2,3 01 -2.8 mAON output current IOUT“ON”VCC = 4.5 V and 5.5 V2/ 3/1,2,3 01 -5.6 -1.0 mAON output currentunbalanceG05IOUT VCC = 5.5 V 4/ 1,2,3 01 380 G06AOFF output current IOUT“OFF”VCC

34、= 4.5 V 2/ 1,2,3 01 -100 G06AOutput breakdown BVCER VCC = 0 V 5/ 1,2,3 01 -30 VPower supply current ICC VCC = 5.5 V 6/ 7/ 101 21mAPropagation delay TPLHTPHLVCC = 4.5 V and 5.5 VSee figure 29,10,11 01 14 ns1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R of

35、 irradiation. However, thisdevice is only tested at the “R” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA = +25G01C.2/ One input at GND, one input open, each output at GND.3/

36、One input at 0.45 V, one input open, each output at GND.4/ Difference between G071 and G072 “ON” output data current.5/ Each input at GND, one output at GND, ILIMIT -100 G06A on output tested with 30 V applied.6/ One input of each transmitter at GND and the other input open. All six output lines at

37、GND.7/ All six input lines open, all six output lines at GND.3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.3

38、.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Micro

39、circuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 53 (see MIL-PRF-38535, appendix A).4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in a

40、ccordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, append

41、ix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be co

42、nducted on all devices prior to quality conformance inspection.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96722DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET6DSCC FORM 2234APR 97

43、Device types 01Case outlines C and XTerminal number Terminal symbol1 INPUT 1 G0712 OUTPUT 1 G0713 OUTPUT 1 G0724 INPUT 1 G0725 INPUT 2 G0716 OUTPUT 2 G0717 SUBSTRATE GND8 OUTPUT 2 G0729 INPUT 2 G07210 INPUT 3 G07111 OUTPUT 3 G07112 OUTPUT 3 G07213 INPUT 3 G07214 VCCFIGURE 1. Terminal connections.Pro

44、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96722DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET7DSCC FORM 2234APR 97NOTES:Input: TTLH G03 10 nsTTHL G03 10 nspw = 500 nsf = 1 MHzIOUT

45、= VOUT/50 G08FIGURE 2. Load circuit and switching waveform.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-96722DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET8DSCC FORM 2234APR 974.2.

46、1 Additional criteria for device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The tes

47、t circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA = +125G01C, minimum.b. Interim and final electrical test parameters shall be as specified in table IIA herein.4.2.2 Additional criteria for devi

48、ce classes Q and V.a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device ma

49、nufacturers Technology Review Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod 1015 of MIL-STD-883.b. Interim and final elec