DLA SMD-5962-96669 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL UP COUNTERS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 双重向上计数器硅单片电路数字微电路》.pdf

《DLA SMD-5962-96669 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL UP COUNTERS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 双重向上计数器硅单片电路数字微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-96669 REV B-2000 MICROCIRCUIT DIGITAL RADIATION HARDENED CMOS DUAL UP COUNTERS MONOLITHIC SILICON《抗辐射互补金属氧化物半导体 双重向上计数器硅单片电路数字微电路》.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、LTR A B I Updated boilerplate and Appendix A. Editorial changes throughout. - tmh I 00-05-09 I Monica L. Poelking DESCRIPTION DATE (YR-MO-DA) APPROVED 98-01 -22 Monica L. Poelking Changes in accordance with NOR 5962-R020-98. REV STATUS OF SHEETS R EV SHEET 12 3 4 5 6 7 8 9 1011 1213 14 PMIC NIA STAN

2、DARD MICROCIRCUIT DRAW1 NG PREPAREDBY Rick C. Officer CHECKED BY I Monica L. Poelking REVISION LEVEL B DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 SIZE CAGE CODE A 67268 5962-96669 THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA APPROVE

3、D BY Monica L. Poelking DRAWING APPROVAL DATE MICROCIRCUIT, DIGITAL, RADIATION HARDENED CMOS, DUAL UP COUNTERS, MONOLITHIC SILICON 95-1 2-27 SHEET 1 OF 21 DSCC FORM 2233 APR 97 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 5962-E204-00 Licensed by Information Hand

4、ling Services1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are availab

5、le and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. SIZE A REVISION LEVEL SHEET B 3 1.2 m. The PIN is as shown in the following example: 96669 Federal RHA Device Device Case Lead stock class des

6、ignator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device

7、 class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpefs). The device type(s) identify the circuit function as follows: Device tvpe Generic number Circuit functio

8、n o1 02 03 451 8B 4520B 4520BN Radiation hardened CMOS dual BCD up counter Radiation hardened CMOS dual binary up counter Radiation hardened CMOS dual binary up counter with neutron irradiated die 1.2.3 Device class desimator. The device class designator is a single letter identifying the product as

9、surance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outli

10、nefs). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacie stvle E CD I P2-Tl6 16 Dual-i n-line package X CDFP4-FI 6 16 Flat package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and

11、V or MIL-PRF-38535, appendix A for device class M. I 5962-96669 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Licensed by Information Handling Services1.3 Absolute maximum ratinas. I/ 21 31 Supply voltage range (VDD) . -0.5 V dc to +20 V dc Input voltage range -0.5 V dc to VDD + 0.5 Vdc DC inp

12、ut current, any one inpu 110 mA 1 O0 mW Device dissipation per output t Storage temperature range (TSTG -65C to +150C Lead temperature (soldering, 1 O seconds) . +265“C Thermal resistance, junction-to-case (Jc): Thermal resistance, junction-to-ambient JA): Case E . 73“CNV Case X . 1 14“CNV Junction

13、temperature (TJ) +175“C 0.68 W Case X . 0.44 W DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.4 Recommended operatina conditions. Supply voltage range (VDD) . 3.0 V dc to +18 V dc Case operating temperature range (TC) . -55C to +125“C Input voltage (VIN) . O V to VDD Output voltage (VOU

14、T) O V to VDD Radiation features: Total dose . 1 x 1 O5 Rads (Si) Single event phenomenon (SEP) effective linear energy threshold, no upsets or latchup (see 4.4.4.5) . 75 MEy/(cmZ/mg) s/ Dose rate upset (20 ns pulse) 5 x 10 Rads(Si)/s 5/ Dose rate latch-up . 2 x 10 Rads(Si)/s 5/ Dose rate survivabil

15、ity . 5 x 10 Rads(Si)/s 5/ Neutron irradiated (device type 03) 1 x neutrons/cm7 11 SIZE A REVISION LEVEL SHEET B ? 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified

16、 herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPEC I FI CATI ON DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits,

17、 Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. - - 1/ Stresses above the absolute maximum rating may cause permanent

18、 damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. - 2/ Unless otherwise specified, all voltages are referenced to VSS. - 3/ The limits for the parameters specified herein shall apply over the full specified VCC range and case temperature

19、range of -55C to +125“C unless otherwise noted. - 4/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is based on JA) at the following rate: Case E . 13.7 mW/“C Case X 8.8 mW/“C - 5/ Guaranteed by design or process but not tested. I 5962-9

20、6669 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesHANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - MIL-HDBK-780 - Standard Microcircuit Drawings. List of Standard Microcircuit Drawings (SMDs). (Unless otherwise indicated, copies of the specification, sta

21、ndards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11 -5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes prec

22、edence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or

23、 as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B

24、devices and as specified herein. 3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to the document. 3.2 Desian, construction, and phvsical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classe

25、s Q and V or MIL-PRF-38535, appendix A and herein for device class M. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 3.2.1 Case outlinefs). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

26、 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation test connections shall be as specified in table III. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, th electrica

27、l petformance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for ea

28、ch subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufact

29、urer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3

30、.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a cer

31、tificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-

32、HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the req

33、uirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. SIZE

34、A REVISION LEVEL SHEET B 4 3.8 Notification of chame for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. I 5962-96669 STANDARD MICROCIRCUIT DRAWING DSCC

35、FORM 2234 APR 97 Licensed by Information Handling Services3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be ma

36、de available onshore at the option of the reviewer. 3.1 O Microcircuit aroup assianment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 40 (see MIL-PRF-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS

37、, OHIO 4321 6-5000 4.1 Samplina and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or functio

38、n as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and techno

39、logy conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. SIZE A REVISION LEVEL SHEET B 5 a. Burn-in test. method 1015

40、 of MIL-STD-883. (1) Test condition A, B, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power diss

41、ipation, as applicable, in accordance with the intent specified in test method 1 O1 5. (2) TA = +125“C, minimum. Interim and final electrical test parameters shall be as specified in table IIA herein. b. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test conditi

42、on and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance wit

43、h MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. b. c. Interim and final elect

44、rical test parameters shall be as specified in table IIA herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes

45、Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accord

46、ance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein except where option 2 of MIL-PRF- 38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified h

47、erein. Inspections to be petformed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). I 5962-96669 STANDARD MICROCIRCUIT DRAWING DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesTest D

48、EFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Supply current REVISION LEVEL SHEET B fi Low level output current (sink) High level output current (source) See footnotes at end of table. Symbol IDD lot lOH TABLE I. Electrical performance characteristics. Conditions unless otherwise specifie

49、d -55C 5 Tc 5 +125“C VDD = 5 V VIN = 0.0 V or VDD VDD=OV VIN = 0.0 V or VDD VDD = 20 V, VIN = 0.0 V or VDD VDD = 5 V Vo = 0.4 V VIN = 0.0 V or VDD VDD=OV Vo = 0.5 V VIN = 0.0 V or VDD VDD = 5 V Vo = 4.6 V VIN = 0.0 V or VDD VDD = 5 V Vo = 2.5 V VIN = 0.0 V or VDD VDD=OV vo = 9.5 v VIN = 0.0 V or VDD STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-96669 DSCC FORM 2234 APR 97 Licensed by Information Handling ServicesTABLE I. Electrical performance characteristics - Continued. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 REVISION LEVEL SHEET B 7 Conditions -55C