DLA SMD-5962-95717-1995 MICROCIRCUIT DIGITAL CMOS OCTAL BUS TRANSCEIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体八角母线接收器硅单片电路线型微电路》.pdf

《DLA SMD-5962-95717-1995 MICROCIRCUIT DIGITAL CMOS OCTAL BUS TRANSCEIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体八角母线接收器硅单片电路线型微电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-95717-1995 MICROCIRCUIT DIGITAL CMOS OCTAL BUS TRANSCEIVER MONOLITHIC SILICON《数字的互补金属氧化物半导体八角母线接收器硅单片电路线型微电路》.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、LTR -tt+ SHEET DESCRIPTION DATE W-M-A) APPROVED * SHEET DRAWING APPROVAL DATE 95-1 1-24 REVISION LEVEL REV STATUS OF SHEETS 596299571 7 SIZE CAGE CODE A 67268 PMIC NIA STAN DARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N

2、IA PREPARED BY Thomas M. Hess DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 CHECKED BY Thomas M. Hess APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, CMOS, OCTAL BUS TRANSCEIVER, MONOLITHIC SILICON DESC FORM 193 JUL 94 DISTRIBUTION STATEMENT A. Approved for public release; distribution

3、is unlimited. - -E1 57-96 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I 1. SCOPE 1.1 =. This drawing focms a part of a one part - one part nunber docunentation system (see 6.6 herein). Two product assurance classes consisting of military high rel

4、iability (device classes Q and M) and space application (device class V), and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Nunber (PIN). available, a choice of Radiation Hardness Assurance (RHA) Levels are reflected in the PIN. Device class M

5、 microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, llProvisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices1I. When I 1.2 m. The PIN shall be as shown in the following example: 7_“f_f_Ll Federal RHA Device Devi ce case Lead st

6、ock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) desi gnat or (see 1.2.4) (see 1.2.5) (see 1.2.3) V Drawing nunber 1.2.1 BHA d es i anator . Device class M RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be marked with the appr

7、opriate RHA designator. MIL-1-38535 specified RHA levels and shal! be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. Device classes Q and V RHA marked devices shall meet the 1.2.2 pevice twem . The device typeCs) shall identify the circuit function as follows: Gen

8、eric nufnber -. pevi ce tvw i rcui t function SIZE STANDARD A 5962-95717 MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL SHEET 2 z o1 82C86H/7 CMOS octal bus transceiver, latchup resistant 1.2.3 pevice class desisnator . The device class designator shall be a

9、 single letter identifying the product assurance level as fol lows: evice class pevice reauirements documentatioq M Vendor self-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 Q or v Certification and qualification to MIL- 1-38535 1.2.4 Cas

10、e outline(s1 . lhe case outline($) shall be as designated in MIL-STD-1835 and as follows: I Outline letter pescriDtive desianator Terminals R CDIPZ- T20 20 packase stvl e Dual - in- 1 ine . The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or 1.2.5 Lead finish ._ l1L-

11、1-38535 for classes Q and V. Finish letter llX1o shall not be marked on the microcircuit or its packaging. The I1Xs1 I designation is for use in specifications when lead finishes A, 8, and C are considered acceptable and interchangeable DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduct

12、ion or networking permitted without license from IHS-,-,-1.3 Absolute maximum ratinos. A/ Supply voltage (VC ) - - - - - - - - - - - - - - - - - - - - - - input or output votage range - - - - - - - - - - - - - - - - - Storage temperature range (TSTG) - - - - - - - - - - - - - - - - Junction temperat

13、ure (TJ) - - - - - - - - - - - - - - - - - - - Maximum power dissipation at t125C (Pd) 2/ - - - - - - - - - - Thermal resistance Junction-to-case (eJ )- - - - - - - - - - - - Thermal resistance Junction-to-ambient feJA) - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - - - - -

14、 - - SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 t8.0 V dc GND -0.5 V dc to Vcc +0,5 v dc -65-C to +150C +1750C 0.77 W ii-c/w 65C/W t275C 5962-9571 7 REVISION LEVEL SHEET 3 1.4 Recomnended opera t i na conditions. * Operating supply voltage range (VDD) -

15、 - - - - - - - - - - - - - Input low voltage range (VIL) - - - - - - - - - - - - - - - - - Input high voltage range (VIH) - - - - - - - - - - - - - - - - - 4.5 V dc to t5.5 V dc -55OC to +125c O V dc to +0.8 V dc 2.2 V dc to VDD Ambient operating temperature range (TA) - - - - - - - - - - - - 2. APP

16、LICABLE DOCUMENTS 2.1 Government soecification. standards. bulletin. and handbook. Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index Df Specifications and Standards specified in the solicita

17、tion, form a part of this drawing to the extent specified herein. SPECIFICATION MILITARY MIL-1-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-183

18、5 - Microcircuit Case Outlines. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMDs). HANDBOOK MILITARY . MIL-HDBK-780 - Standardized Military Drawings. (Copies of the specification, standards, bu1 letin, and handbook required by manufacturers in connection with specific acq

19、uisition functions should be obtained from the contracting activity or as directed by the contracting activity. ) - L/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. E/ If d

20、evice power exceeds package dissipation capability, provide heatsinking or derate linearly (the derating is based on eJA) at the following rate: 15.4 IIW/C. DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SIZE A STANDARD MICROCI

21、RCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL DESC FORM 193A JUL 94 5962-95717 SHEET 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-95717 7999996 0081237 781 m Group A subgroups Device type 1.2.3 1,2.3

22、1.2,3 1,2,3 1,2,3 1,2,3 Al 1 Al 1 Al 1 Al 1 Al 1 Al 1 4 Al 1 TABLE I, Electrical oerformance characteristics. - Test symbo 1 Conditions -55C a Tq s +125OC unless otherwise specified Unit Limits Max Min Logical 1 input voltage VIH !cc = 5.5 v, ins 1-8,12-19 2.2 V Logical O input voltage VIL Jcc ins =

23、 1-8, 4m5 12-19 0.8 V OH2 JCC = 4.5 V, IOH = -8.0 mA )ins 12-19 V Output high voltage 3.0 Output high voltage OH1 1,2,3 All 3.0 V CC = 4.5 V, IoH = -4.0 mA ins 1-8, VOH3 ICC-0.4 V Output high voltage Output low voltage VOL2 VOL1 IIH 0.45 V Jcc = 4.5 v, IOL = 20.0 ln4 Pins 12-19 0.45 V ucc = 4.5 v, I

24、OL = 12 nd Pins 1-8 Output low voltage 10 ucc = 5.5 v, VIN = vcc Pins 9, 11 High input leakage current IIL VCC 5.5 V, VIN = GND Pins 9, 11 -10 Low input leakage current Standby power supply CCSB V - 5.5 V, VIN = VCC or END 10 d Output leakage current OZH d 10 Output leakage current IOZL Vcc = 5.5 V,

25、 V N = GND Pins 1-8, 12-14 -10 d Input capacitance B inputs n Open, f = 1 MHz. A? kasurements referenced See 4.4.1 to device GND PF 18 14 LIN A inputs See footnotes at end of table. SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 5962-95717 I SHEET REVISION

26、LEVEL DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Test TABLE I. Electrical Derforman ce characteristic% - Symbal Conditions Group A -55C s TA s +125C unless otherwise specified subgroups = Open, f = 1 MHz, 4 AFF measurements

27、 referenced See 4.4.1 IN to device GND Vcc = 4.5 V and Vcc = 5.5 V f = 1.25 MHz 788 tIV0V Vcc = 4.5 V and 5.5 V 9,10,11 t Vcc = 4.5 V and 5.5 V 9,10,11 tIVOV(l) Vcc = 4.5 V and 5.5 V 9,10,11 tEHTV(2) VCC 4.5 v and 5.5 v 9,10,11 tTEL(3) Vcc 4.5 V and 5.5 V 9,10,11 tEHOZ(4) VCC = 4.5 v and 5.5 v 9,10,

28、11 tRt tF(6) Vcc = 4.5 V and 5.5 V 9,10,11 tEHEL(7) Vcc = 4.5 V and 5.5 V 9,10,11 tELOVc5) Vcc = 4.5 V and 5.5 V 9,10,11 Input capacitance ALL other inputs Continued. Device Limits type Hin Max ALL 13 7 Al 1 ALL 35 ALL 65 ALL 5 ALL 5 All 10 AL1 5 35 All 20 ALL 35 All 5 Functional tests SIZE A STANDA

29、RD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 Prop. delay input to output 5962-9571 7 REVISION LEVEL SHEET 6 Prop. delay input to output Prop. delay, input to output 1/ 2/ 3 Transmit/ReceiVe hold time 1/2/ Transmit/Receive hold time 1/ u Output disable time 1/u 3 Input

30、 rise/falL time 1/u Minimm output enable high time Output enable time 1/u3 Unit PF ns ns ns ns ns 11s 11s ns ns 1/ This parameter is guaranteed but not tested. This parameter is characterized upon initial design or process changes whci h affect th is caracteri st i c. 2/ AC parameter tested as per t

31、est circuits and definitions in timing waveforms. Input rise and fall times are driven at 1 ns/V. . - -. . -. . 3 Unless otherwise specified, test as follow: V, = 0.4 V. C, = 50 DF. V, a 1.5 V. V, s 1.5 V. f = 1 Mhz, VIH = 2.5 V, VIH for T (transmit pin) L V, - 0.5 V, k/ Akystem Limithion only u% ch

32、anging itrection. Not a measured parameter. DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-FIGURE I. Terminal connections. 5962-9571 7 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON,

33、 OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-59b2-95737 = 9999996 0083240 276 m 1 FIGURE 2 tock diaqrm. 5962-9571 7 I SHEET REVISION LEVEL DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or

34、 networking permitted without license from IHS-,-,-SMD-5962-957L7 9999996 008L24L LO2 STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 A SIDE OUTPUTS 2.36 V 1.5 v 1.5 V TEST OUTPUT POINT TLSf OUTPUT POINT TCSI OUTPUT POINT OUTPUT NOTE Z 100 pF NOTE Z t 100 pF NOTE Z

35、 ELOV ELOV OUTPUT LOU ENABLE OUTPUT LOWHIGH DISABLE LOAD CIRCUIT 100 pF NOTE z t1VOV OUTPUT HIGH ENABLE LOAO CIRCUIT LOAO CIRCUIT LOAO CIRCUIT SIZE A 5962-95717 REVISION LEVEL SHEET 9 1.5 V 1.5 v 2.27 V B SIDE OUTPUTS 2.27 V TEST POINT TEST OUTPUT POINT TEST OUT PUT POINT TEST OUTPUT POINT OUTPUT 30

36、0 pF NOTE 2 NOTE 2 300 pF NOTE 2 300 pF NOTE 2 tIV0V kov OV EHOZ LOAO CIRCUIT OUTPUT HIGH ENABLE OUTPUT LOU ENABLE OUTPUT LOWHIGH DISABLE LOAO CIRCUIT LOAO CIRCUIT LOAO CIRCUIT Note: 1/ VIL = 0.4 V, V z/ includes jig ay stray capacitance. 3 For tlvOv and tELOV VOL = 0.45 V, V 4/ All timing measureme

37、nts are made atOV.5 V unless otherwise specified = 2.6 V except for pin 11 (Vcc - 0.5 V). 3.0 V FIGURE 3. Timins wav eforms and load circuit DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-95717 9999996 0083242 049 STAN

38、DARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 4. QUALITY ASSURANCE PROVISIONS 4.1 Samlina and bmct ion. For device class M, sampling and inspection procedures shall be in accordance with For device classes Q and V, sampling and inspection procedures shall be in accor

39、dance MIL-STD-883 (see 3.1 herein). with MIL-1-38535 or as modified in the device manufacturers Quality Management (QM) plan. plan shall not effect the form, fit, or function as described herein. conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening

40、shall be in accordance with MIL-1-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. The modification in the QM 4.2 Screen iqg. For device class M, screening shall be in accordance with method 5004 of MIL-STO-883, and shall be 4.2.1 Additional

41、criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as ap

42、plicable, in accordance with the intent specified in test method 1015. The test circuit shall be maintained by the manufacturer under docunent (2) TA = +125C, minim. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classe

43、s Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-1-38535. maintained under docunent revision level control of the device manufacturers Technology Review Board (TRB)

44、in accordance with MIL-1-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. b. Interim and final electric

45、al test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in appendix B of MIL-1-38535 or as modified in the device manufacturers quality management (QM) plan. The burn-in test circuit shal

46、l be . 4.3 Qualification insmction for d evi -ce classes Q and 1 Qualification inspection for device classes Q and V shall Inspections to be performed shall be those specified in MIL-1-38535 and herein for . . be in accordance with MIL-1-38535. groups A, B, C, D, and E inspections (see 4.4.1 through

47、 4.4.4). 4.4 Conformance inswct ion. Quality conformance inspection for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein) and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C

48、, D, and E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for classes Q and V shall be in accordance with MIL-1-38535 or as specified in the approved QI4 plan including groups A, B, C, O, and E inspections and as specified herein except where option 2 of MIL-1-38535 permits

49、 alternate in-line control testing. 4.4.1 Sirom A insw ct i on. a. b. Tests shall be as specified in table IIA herein. For device class M, subgroqx 7 and 8 tests shall be sufficient to verify the functionality of the device. For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of