DLA SMD-5962-94573 REV B-1996 MICROCIRCUIT DIGITAL CMOS HISTOGRAMMER ACCUMULATING BUFFER MONOLITHIC SILICON《硅单片 分布统计器 累积缓冲器 氧化物半导体数字记忆微型电路》.pdf

《DLA SMD-5962-94573 REV B-1996 MICROCIRCUIT DIGITAL CMOS HISTOGRAMMER ACCUMULATING BUFFER MONOLITHIC SILICON《硅单片 分布统计器 累积缓冲器 氧化物半导体数字记忆微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-94573 REV B-1996 MICROCIRCUIT DIGITAL CMOS HISTOGRAMMER ACCUMULATING BUFFER MONOLITHIC SILICON《硅单片 分布统计器 累积缓冲器 氧化物半导体数字记忆微型电路》.pdf（23页珍藏版）》请在麦多课文档分享上搜索。

1、SflD-5962-94573 REV B 9999996 0090453 T W DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER COLUMBUS 3990 EAST BROAD STREET COLUMBUS, OH 43216-5000 IN REPLY REFER TO: DSCC-VAC (Mr. Gauder/(DSN)850-0545/614-692-0545) DEC O 2 l896 SUBJECT: Notice of Revision (NOR) 5962-RO45-97 for Standard Microcircuit D

2、rawing (SMD) 5962-94573. Military/industry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR sho

3、uld be attached to the subject SMD for future reference. Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DSCC a certificate of compliance. This is evidenced by an existing active current

4、 Certificate of compliance on file at DSCC with a DSCC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DSCC is otherwise notified. DSCC has received and accepted a certificate of compliance from Logic Devices, cage

5、 code 65896 for PINS 5962-9457301MYX and.5962-9457302MYX vendor similar part numbers LF48410GMB39 and LF48410GMB30, respectively. This action wiil be reflected in the next revision of MIL-HDBK-103. If you have comments or questions, please contact Larry T. Gauder at (DSN)850-0545/(614)692-0545. 1 En

6、cl Monica L. Poelking Chief, Custom Microelectroncs Team Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ublic reporting burden for.this,viiection 18 estimated to average 2 hours per response. induding the time for rewewin instructions. seatchin exjs

7、ting dala ACTIVITY NO. LEASE DO %T RETURN Y add iiEii. Revisions description colum; add IlChanges in accordance with NOR 5962-R045-97Ii. Revisions date colm; add 1196-11-05ii. Revision level block; add iiEii. Rev status of sheets; for sheet 1, 2, 3, and 8, add IWi. Putline Letter PescriDtive clesisn

8、ator Jermi add IW. Sheet 3: 1.3 . Change from: llThermal resistance:lI to ilThermal resistance, Case X and YIi. Revision level block; add llB1l. Sheet 8: FIGURE 1. Wminal connect ions. Add Case IIX and YI1 to top of figure. Revision level block; add 4. THIS SECTION FOR GOVERNMENT USE ONLY i(xone) I

9、X 1 (1) Existing document supplemented by the NOR may be used in manufacture (2) Revised document must be received before manufacturer may incorporate this change. U Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-999999b 0055830 787 DEFENSE LOGISTIC

10、S AGENCY DEFENSE ELECTRONICS SUPPZY CENlEFl 1507 WLMHGTDN PIKE DAYTON, OH 45444- 5765 DESC-ECC (Mr. L. Gauder/(AV 986) 513-296-8526/1tg) 2 9 JUL 1994 IN REPLY REFER TO SUBJECT: Notice of Revision (NOR) 5962-R215-94 for Standardized Military Drawing (SMD) 5962-94573. Military/Industry Distribution Th

11、e enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR should be attached to the subject SMD for future reference. T

12、hose companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DESC a certificate of compliance. This is evidenced by an existing active current certificate of compliance on file at DESC along with a DE

13、SC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DESC is otherwise notified. If you have comments or questions, please contact Larry T. Gauder at (AV)986-8526/(513)296-8526. A 2 Encl MONICA L. POELKING Chief, Cus

14、tom Microelectronics Branch Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- 9999996 0055833 b33 NOTICE OF REVISION (NOR) Form Approved 1. DATE WB NO. 0704-0188 (YYI*IDD) I 94-07-13 This revision described below has been authorized for the docuwent l

15、isted. I I 9. TITLE OF DOCUCIENT 10. REVISION LETTER MICROCIRCUIT, DIGITAL, CMOS, HISTOGRM14ER/ACCATlNG a. CURRENT b. NEU BUFFER, MONOLITHIC SILICON. Initial A Public reporting burden for this collection is estimated to average 2 hours per response the time for reviewin data needed and conpyeting an

16、d reviewing the collection of information. this kirdenestimate or an for reducin this burden !o D for Informafion Opreti add I8A1I. Revisions description colum; add Vhanges in accordance with NOR 5962-R215-91“. Revisions date colum; add 94-07-13“. Revision level block; add “A“. Rev status of sheets;

17、 For sheets 1, 5, 8, 9, 10, 11, and 13, add iiAi8. TABLE I. Output high voltage, conditions colum delete IIIOH = -400 mA1l and substitute IIIOH = -400 pA“. Sheet 8: FIGURE 1. Terminal connections, pins BI, Cl, 62, C2 and E2, delete and substitute W8. Pin A5 delete 18PIN661 and Substitute “PIN8“. Pin

18、 C5 delete 1tPIN841 and substitute 81P1N6“. Pin B9 delete 8aDIN811 and substitute 11DIN6“. Pin All delete 11DIN611 and substitute 1tDIN818. Revision level block add laA1a. Sheet 5: f. DATE SIGNED (YYMD) 94-07-13 c. DATE SIGNED (YYnnOD) 94-07-13 Do Fori 16p5, APR 92 Previous editions are obsolete Pro

19、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-= 9999996 0055832 55T 13. DESCRIPTIOW OF REVISIOW - CONTINUED Docwnt NO.: 5962-94573 Revision: A NOR No.: 5962-R215-94 I Sheet: 2 of 2 Sheet 10: FIGURE 3. Timing uaveform. Delete “START=a1 and substitute 0

20、8START#“. Delete lEFC=II and substitute 08FC#14. Delete I8LD=“ and substitute 88LDP. Delete 1WART=80 and substitute KWART#80. Revision level block add Wo. Sheet 11: FIGURE 3. Timing uaveforms. Delete “RD=88 three places and substitute olRD#i“. Delete WR=18 tuo places and substitute iiWR#ol. Revision

21、 level block add Wi. Sheet 13. Paragraph 4.2.lb, delete and substitute “Interim and final electrical test parameters shall be as specified in table II herein. Interim test is optional at the discretion of the manufacturer.ao Paragraph 4.2.2b, delete and substitute 811nterim and final electrical test

22、 paremeters shall be as specified in table II herein. Interim test is optional at the discretion of the manufacturer.“ Revision level block add iiAii. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-WTE LTR mImicN (YR-MO-DA) AilTom FMIC N/A Ev 3izr F

23、w SET STANMRDIZBI MILITARY DFuwbG 111 567 THIS DRAWING IS AVAILABLE FOR USE BY ALL OEPARTUENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC MA )ESC FORU 193 JUL 91 PREPARED BY Thomas M. Kees CHECKED BY Thomu M. Hu APPROVED BY Moriam L. Poolking WIAWING APPROVAL DATE 94- 04-18 RMSON LEVEL MICROCIRC

24、UIT, DIGITAL, CMOS, HISTOGRAMMMER/ACCUING BUFFER MONOLITHIC SILICON I I IzE A IFy2= I 5962-94573 _- I I CHEET 1 OF 17 5962-206-94 DISTRIBUTION STATEUENT A. Approved for tic relesse; distribution is dimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

25、-,-,-m qqqqqqb 0055m 322 m I 1. SCOPE 1.1 Scow. This drawing forms a part of a one part - one part nunber docmentation system (see 6.6 herein). Tua product assurance classes consisting of military high reliability (device classes Q end U) and space application (device class V), and a choice of case

26、outlines and lead finishes are available and are reflected in the Part or Identifying Nuher (PIN). Device class M microcircuits represent non-JAW class B microcircuits in accordence with 1.2.1 of MIL-STD-883, llProvisions for the use of MIL-STD-883 in conjunction with compliant non-JAN deviceso1. Wh

27、en available, a choice of Radiation Harchess Assurance (RHA) Levels are reflected in the PIN. 1.2 m. The PIN shall be as show in the following exanple: sr i 94573 i Federal RHA Device Device Case LWd stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) des i gnator (se

28、e 1.2.4) (see 1.2.5) LA (see 1.2.3) / Drawing nunber 1.2.1 RHA designator. Device class M RHA marked devices shall et the MIL-1-38535 appendix A specified RHA Levels and shall be marked with the appropriate RHA designator. Device classes Q and V RHA marked devices shall neet the MIL-1-38535 specifie

29、d RHA levels and shall be marked with the appropriate RHA designator. A dash (-1 indicates a non-RHA device. 1.2.2 Device tvw(s2. The device type(s) shall identify the circuit function as follows: Device tm Generic nunber Circuit fmction Dl 02 48410-25 4841 0-33 Histograanier/accwlat ing buff er His

30、togranmer/accwlat ing buff er 1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements docmentation M Vendor self-certification to the requirements for non-JAN class B microcircuits in acc

31、ordance with 1.2.1 of MIL-STD-883 Q or V Certification and qualification to MIL-1-38535 1.2.4 Case outline(s1. The case outline(s) shall be as designated in MIL-STD-1835 and as folloUS: Outline letter Descri Dt ive desi gnat or Terminals Package stvle X CnGA3-P84 84 Pin-grid array 1.2.5 Lead finish.

32、 The lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-1-38535 for classes Q and V. designation is for use in specifications when lead finishes A, 6, and C are considered acceptable and interchangeable without preference. Finish letter I1Xl1 shall not be marked on

33、the microcircuit or its packaging. The llXo I I I I STANDARD1 ZED 5962-94573 MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 Esc FcfM 1934 Ju 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-m 9999796 0055835 269 m STANDARD1 P

34、ED SI PE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 FWISICN LEEL li3 Absolute maxim ratinas. 1/ Supply voltage .8.0 V Storage temperature range (1s) .-65“C to 150C Input, output, or I/O voltage applied range Lead tenperature (soldering, 10 seconds) . .300C Junction tenpe

35、rature (TJ) .17S0C Thermal resistance: . .GN . 0.5 V to VCC + 0.5 V Junction-to-dient (BJA) . .34.3c/u Juiction-to-case (jc) . .See MIL-STD-1835 Pouer dissipation at 125C -1.46 U 1.4 Recomnended operating conditions. Operating voltage range . .4.5 V to 5.5 V Ambient operating temperature range (TA)

36、. .-55*C to 1Z0C 1.5 Digital logic testing for device classes P and y. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) XX percent 2/ 2. APPLICABLE DOCUMENTS 2.1 Govermient specification. standards, kiltetin. and handbook. Unless otherwise specified, the follow

37、ing specification, standards, bulletin, and handbook of the issue listed in that issue of the Depertment of Defense Index of Specifications and Standards specified in the solicitation, fora a part of this drawing to the extent specified herein. SPECIFICATION 5962-94573 S-EEr MILITARY MIL-1-38535 - I

38、ntegrated Circuits, Manufacturing, General Specification for. STANDARDS Mi L I TARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN MIL I TARY MIL-BUL-103 - List of Standardized Military Drawi

39、ngs (940s). HANDBOOK MILITARY MIL-HDBK-780 - Standardized Military Drawings. (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting

40、activity.) - 1/ Absolute maximum ratings are limiting values, applied individually beyond which the serviceability of the circuit may be impaired. - 2/ Values will be added when they become available. Functional operability under any of these conditions is not necessarily inplid. Provided by IHSNot

41、for ResaleNo reproduction or networking permitted without license from IHS-,-,-999999b 0055836 LT5 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 The individual

42、item requirements for device class M shall be in accordance with 1.2.1 of MIL-STD-883, lProvisions for the use of MIL-STD-883 in conjuiction with ccnpliant non-JAN devicesn1 and as specified herein. device manufacturers Quality Management (W) plan, and as specified herein. Item reauirements. lhe ind

43、ividual item requirements for device classes P and V shall be in accordance with MIL-1-38535, the STANDARD1 ZED SIZE 5962-94573 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER 4 DAYTON, OHIO 45444 ISICN LEEL i4fET i 3.2 pesign. construction. and physical dimensions. lhe design, construction, an

44、d physical dimensions shall be as specified in MIL-STD-883 (see 3.1 herein) for device class M and MIL-1-38535 for device classes P and V and herein. 3.2.1 Case outline(s1. 3.2.2 Terminal connections. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.2.4 liming waveforms. T

45、he timing waveform shall be as specified on figure 3. 3.3 Electrical wrformance characteristics and Dostirradiation mrenieter limits. Unless otherwise specified lhe case outline(s) shall be in accordance with 1.2.4 herein. lhe terminal camections shall be as specified on figure 1. herein, the electr

46、ical performance characteristics and postirradiation parmeter limits are as specified in table I and shall apply over the full ambient operating tenperature range. The electrical tests for each subgroup are defined in table I. accordance uith MIL-STD-883 (see 3.1 herein). MIL-BUL-103. 3.4 Electrical

47、 test rwuirements. lhe electrical test requirements shall be the subgroups specified in table II. lhe part shall be marked uith the PIN listed in 1.2 herein. Marking for device class M shall be in 3.5 Marking. In addition, the mnufacturers PIN may also be marked as listed in Marking for device class

48、es 9 and V shall be in accordance with MIL-1-38535. 3.5.1 CertificatiotVcmliance mark. lhe compliance mark for device class M shall be a WY as required in MIL-STO-883 (see 3.1 herein). in MIL-1-38535. manufacturer in order to be listed as an approved source of supply in MIL-BUL-103 (see 6.7.2 herein

49、). classes Q and V, a certificate of compliance shall be required from a OWL-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.1 herein). lhe certificate of conpliance subniitted to DESC-EC prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product neets, for device class M, the requirements of