DLA SMD-5962-90781 REV B-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL BUFFER THREE-STATE MONOLITHIC SILICON《硅单块 三态缓冲器 高级肖特基晶体管晶体管逻辑 双极数字微型电路》.pdf

《DLA SMD-5962-90781 REV B-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL BUFFER THREE-STATE MONOLITHIC SILICON《硅单块 三态缓冲器 高级肖特基晶体管晶体管逻辑 双极数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90781 REV B-2006 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL BUFFER THREE-STATE MONOLITHIC SILICON《硅单块 三态缓冲器 高级肖特基晶体管晶体管逻辑 双极数字微型电路》.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Revised to use alternate die/fabrication requirements and “QD” certification mark. New boilerplate. -ljs 99-10-22 Raymond Monnin B Update to current requirements. Editorial changes throughout. - gap 06-07-24 Raymond Monnin The original first page

2、 of this drawing has been replaced. REV SHET REV SHET REV STATUS REV B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Donald R. Osborne DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Tim H. Noh COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mi

3、l THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED SCHOTTKY, TTL, BUFFER, THREE-STATE, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-01-21 MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67

4、268 5962-90781 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E328-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90781 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FOR

5、M 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (P

6、IN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90781 01 M C X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see

7、1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified

8、 RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54F125 Quad buffer, 3-state 1.2.3 Device class designator. The devi

9、ce class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V

10、 Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual in-line D GDFP1-F14 or CDFP2-F14 14 Flat package 2 CQCC1-N20 2

11、0 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWI

12、NG SIZE A 5962-90781 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) . -0.5 V dc to +7.0 V dc Input voltage range (VIN) . -0.5 V dc to +7.0 V dc Input current range (IIN) . -30.0 mA to

13、 +5.0 mA Output applied in output High output state range (VOUT) . -0.5 V to VCC Current applied to output in Low output state (IOUT) 96 mA Storage temperature range (TSTG) -65C to +150C Thermal resistance, junction-to-case (JC) See MIL-STD 1835 Junction temperature (TJ) +175C Lead temperature (sold

14、ering, 10 seconds) +300C Maximum power dissipation (PD) 2/ . 220 mW 1.4 Recommended operating conditions. Supply voltage (VCC) . +4.5 V to +5.5 V dc Minimum high level input voltage (VIH) 2.0 V dc Maximum low level input voltage (VIL) . 0.8 V dc Maximum input clamp current (IIK) -18 mA Maximum high

15、level output current (IOH) . -12 mA Maximum low level output current (IOL) . 48 mA Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to

16、the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Tes

17、t Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist

18、.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this dra

19、wing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performan

20、ce and affect reliability. 2/ Maximum power dissipation is defined as VCCx ICCand must withstand the added PDdue to the short-circuit output test (e.g., IOS). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9

21、0781 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the devi

22、ce manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

23、 herein. This drawing has been modified to allow the manufacturer to use the alternate die/fabrication requirements of paragraph A.3.2.2 of MIL-PRF-38535 or other alternative approved by the Qualifying Activity. 3.2 Design, construction, and physical dimensions. The design, construction, and physica

24、l dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specif

25、ied on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 4. 3.3 Electrical perf

26、ormance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirement

27、s. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. F

28、or packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accor

29、dance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “

30、C“ as required in MIL-PRF-38535, appendix A. For class Q product built in accordance with A.3.2.2 of MIL-PRF-38535, or as modified in the manufacturers Quality Management (QM) Plan, the “QD” certification mark shall be used in place of the “QML” or “Q” certification mark. 3.6 Certificate of complian

31、ce. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as

32、 an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

33、herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcirc

34、uits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device cla

35、ss M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device cl

36、ass M. Device class M devices covered by this drawing shall be in microcircuit group number 9 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90781 DEFENSE SUPPLY CENTER COLUM

37、BUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C Group A subgroups Limits Unit unless otherwise specified Min Max IOH= -3 mA 1, 2, 3 2.4 High level output voltage VOH VCC= 4.5 V VIL= 0.8

38、 V VIH= 2.0 V IOH= -12 mA 1, 2, 3 2.0 V Low level output voltage VOL VCC= 4.5 V, VIL= 0.8 V, IOL= 48 mA, VIH= 2.0 V 1, 2, 3 0.5 Input clamp voltage VIK VCC= 4.5 V, IIN= -18 mA 1, 2, 3 -1.2 High level input current IIH1VCC= 5.5 V, VIN= 2.7 V 1, 2, 3 20 A Input current at maximum input voltage IIH2VCC

39、= 0.0 V, VIN= 7.0 V 1, 2, 3 100 Low level input current IIL VCC= 5.5 V, VIN= 0.5 V 1, 2, 3 -20 Off-state output current, High level voltage applied IOZH VCC= 5.5 V, VIH= 2.0 V VOUT= 2.7 V 1, 2, 3 50 Off-state output current, Low level voltage applied IOZL VCC= 5.5 V, VIH= 2.0 V VOUT= 0.5 V 1, 2, 3 -

40、50 Short circuit output current 1/ IOS VCC= 5.5 V, VOUT= 0.0 V 1, 2, 3 -100 -225 mA Supply current (total) 2/ ICCH VCC= 5.5 V, nC = GND, nA = 4.5 V 1, 2, 3 24 mA ICCL VCC= 5.5 V, nC = GND, nA = GND 1, 2, 3 40 CCZ VCC= 5.5 V, nC = 4.5 V, nA = 4.5 V 1, 2, 3 35 Functional tests See 4.4.1b VCC= 4.5 V, 5

41、.5 V 7, 8A, 8B VCC= 5.0 V 9 2.0 6.0 Propagation delay time, nA to nY, low to high tPLH VCC= 4.5 V and 5.5 V 10, 11 2.0 7.0 ns VCC= 5.0 V 9 3.0 7.5 Propagation delay time, nA to nY, high to low tPHL CL= 50 pF RL= 500 See figure 4 VCC= 4.5 V and 5.5 V 10, 11 3.0 8.5 VCC= 5.0 V 9 3.5 7.5 Output enable

42、time to high level tPZH VCC= 4.5 V and 5.5 V 10, 11 3.5 9.0 VCC= 5.0 V 9 4.0 8.0 Output enable time to low level tPZL VCC= 4.5 V and 5.5 V 10, 11 4.0 9.5 VCC= 5.0 V 9 1.5 5.0 Output disable time from high level tPHZ VCC= 4.5 V and 5.5 V 10, 11 1.5 6.5 VCC= 5.0 V 9 1.5 5.5 Output disable time from lo

43、w level tPLZ VCC= 4.5 V and 5.5 V 10, 11 1.5 7.5 1/ Not more than one output should be shorted at a time, and the duration of the short-circuit condition should not exceed one second. 2/ ICCis measured with output open. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic

44、ense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90781 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines C and D 2 Terminal number Terminal symbol 1 C1NC 2 1A C1 3 1Y 1A 4 C21Y 5 2A NC 6 2Y C27 GND NC 8 3Y

45、2A 9 3A 2Y 10 C3GND 11 4Y NC 12 4A 3Y 13 C43A 14 VCC C315 - NC 16 - 4Y 17 - NC 18 - 4A 19 - C420 - VCC NC = No connection FIGURE 1. Terminal connections. Inputs Outputs nCnA nY L L L L H H H X Z H = High voltage level L = Low voltage level X = Dont care Z = High impedance FIGURE 2. Truth table. Prov

46、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90781 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 FIGURE 3. Logic diagram. Test Switch tPLZ Closed tPZL

47、Closed All other Open FIGURE 4. Test circuit and switching waveforms. NOTES: 1. RL= Load resistor, see table I for value. 2. CL= Load capacitance includes jig and probe capacitance. See table I for value. 3. RT= Termination resistance should be equal to ZOUTof the pulse generator. 4. VX= Unlocked pi

48、ns must be held at 0.8 V, 2.7 V, or open per truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90781 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 Input Pulse Characteristics Rep. rate Pulse width tTLH tTHL 1 MHz 500 ns 2.5 ns 2.5 ns Propagation delay time for input to output 3-state output enable time to high level and output disable time from high level.