DLA SMD-5962-89775 REV A-2009 MICROCIRCUIT LINEAR FAST QUAD PNP TRANSISTOR ARRAY MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. - drw 09-04-14 Joseph D. Rodenbeck THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 PMIC N/A PREPARED BY R
2、ick C. Officer CHECKED BY Charles E. Besore DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Michael A. Frye STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 9
3、1-02-11 MICROCIRCUIT, LINEAR, FAST QUAD PNP TRANSISTOR ARRAY, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-89775 SHEET 1 OF 8 DSCC FORM 2233 APR 97 5962-E229-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICR
4、OCIRCUIT DRAWING SIZE A 5962-89775 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, a
5、ppendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-89775 01 C A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device types. The device types identify the circuit function as follows: Device type Ge
6、neric number Circuit function 01 EP2015 Fast quad PNP transistor array 02 EP2015A Fast quad PNP transistor array 1.2.2 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line
7、 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Collector-base voltage (VCB) 40 V Emitter-base voltage (VEB). 5 V Collector-emitter voltage (VCE). 40 V Collector current (IC) 50 mA Base curren
8、t (IB) 10 mA Power dissipation (PD) (TA= +25C): Each transistor . 500 mW Total package. 1.25 W Junction temperature (TJ) 175C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Thermal resistance, junctio
9、n-to-ambient (JA): Case C . 86C/W Case 2 100C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89775 DEFENSE SUPPL
10、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwis
11、e specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-183
12、5 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Stand
13、ardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersede
14、s applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that
15、 is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval i
16、n accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “Q
17、ML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. T
18、he case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and
19、 shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-3
20、8535, appendix A. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the dev
21、ice. 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QM
22、L flow option is used. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89775 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical perform
23、ance characteristics. Test Symbol Conditions -55C TA+125C Group A subgroupsDevice type Limits Unit unless otherwise specified Min Max Change in base-emitter voltage 1/ delta VBEVCE= 4 V, IC= 1 mA 1 01 5.0 mV 2, 3 10.0 1 02 1.0 2, 3 2.0 delta hFE1VCE= 1 V, IC= 0.1 mA 1 01 10.0 % Static forward curren
24、t ratio between each of six possible pairs of transistors 1/ 2/ 2, 3 20.0 1 02 5.0 2, 3 10.0 delta hFE2VCE= 1 V, IC= 1 mA 1 01 10.0 2, 3 20.0 1 02 5.0 2, 3 10.0 delta hFE3VCE= 1 V, IC= 10 mA 1 01 10.0 2, 3 20.0 1 02 5.0 2, 3 10.0 Static forward current transfer ratio 3/ hFE1VCE= 1 V, IC= 0.1 mA 1 01
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